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    • 4. 发明申请
    • UNIPOLAR QUANTUM CASCADE LASER
    • 单极量子级联激光器
    • WO03023909A2
    • 2003-03-20
    • PCT/EP0210019
    • 2002-09-06
    • FRAUNHOFER GES FORSCHUNGYANG QUANKUISCHNEIDER HARALDKOELER KLAUS
    • YANG QUANKUISCHNEIDER HARALDKOELER KLAUS
    • H01S5/34H01S5/343H01S
    • B82Y20/00H01S5/3402H01S5/3407H01S5/34306
    • The invention relates to a unipolar quantum cascade laser comprising a plurality of adjacent semiconductor multilayer structures arranged in a periodic sequence and through which an electron flow can be applied by providing at least two contact points. Said structures have an optically active area comprising at least one quantum film structure in which there are at least one upper energy level and one lower energy level for the electrons, between which light emitting electron transitions take place. Said structures also have a transition area comprising a plurality of semiconductor layers through which electrons from the lower energy level of the optically active area reach the upper energy level of an optically active area of an adjacent semiconductor multilayer structure, which is directly adjacent to the transition area in the direction of electron transport, wherein the electron transitions and the electron transport takes place solely in the conduction band of the semiconductor multilayer structures. The invention is characterized in that at least one blocking layer is provided in the semiconductor multilayer structure, said layer having an uppermost conduction band edge potential that is higher than the uppermost band edge potential of all the other semiconductor layers contained in the semiconductor multilayer structure.
    • 公开的是具有多个在周期序列的半导体多层结构彼此相邻的单极Ouantenkaskadenlaser,电子电流可以通过留下深刻的印象,其通过提供至少两个接触点,并且每个具有具有至少一个量子膜结构的光学活性区域内,其中至少一个上 和电子的较低能级都存在时,在它们之间发生的光通过从光学活性区域的较低能级在电子传输方向上的过渡区域的上能级的电子发射电子跃迁,以及具有其具有多个半导体层的过渡区域,直接 到达相邻的半导体多层结构的相邻的光学活性区域,其中,所述电子跃迁和在H的导带只在电子传输 albleiter多层结构中进行时,本发明的特征在于,一个阻挡层的半导体多层结构内提供至少包括最上面的导带边缘电位比包含在所述半导体层叠构造的半导体层之内的所有其他的最上面的带边缘的电势高。