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    • 4. 发明授权
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    • US5973452A
    • 1999-10-26
    • US922842
    • 1997-08-26
    • Christo P. BojkovRichard Lee FinkNalin KumarAlexei TikhonskiZvi Yaniv
    • Christo P. BojkovRichard Lee FinkNalin KumarAlexei TikhonskiZvi Yaniv
    • G09G3/22G09G3/34H01J1/304H01J9/02H01J29/46H01J1/30
    • H01J29/467G09G3/22H01J1/304H01J9/025H01J2201/30457H01J2329/00
    • The present invention provides for a field emission device including an anode assembly and a cathode assembly, wherein the cathode assembly further includes a substrate, a plurality of electrically conducting strips deposited on the substrate, and a continuous layer of diamond material deposited over the plurality of electrically conducting strips and portions of the substrate exposed between the plurality of electrically conducting strips. The field emission device may further include a grid assembly including a perforated silicon substrate, a first dielectric layer deposited on the silicon substrate, and a first conducting layer deposited on the first dielectric layer, wherein the first dielectric layer and the first conducting layer have perforations coinciding with perforations of the silicon substrate. The grid assembly may further include a second dielectric layer deposited on an underside of the silicon substrate, wherein the second dielectric layer has perforations coinciding with perforations of the silicon substrate.
    • 本发明提供一种包括阳极组件和阴极组件的场发射装置,其中阴极组件还包括衬底,沉积在衬底上的多个导电条以及沉积在多个衬底上的金刚石材料的连续层 导电条和基板的部分暴露在多个导电条之间。 场发射器件还可以包括栅极组件,其包括多孔硅衬底,沉积在硅衬底上的第一介电层和沉积在第一介电层上的第一导电层,其中第一介电层和第一导电层具有穿孔 与硅衬底的穿孔重合。 栅格组件还可以包括沉积在硅衬底的下侧上的第二电介质层,其中第二介电层具有与硅衬底的穿孔重合的穿孔。