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1. 发明申请

WO2005055288A3 METHOD AND DEVICE FOR THE ALTERNATING CONTACTING OF TWO WAFERS 审中-公开
标题翻译：方法和设备相互接触两块基板
公开(公告)号：WO2005055288A3
公开(公告)日：2006-02-02
申请号：PCT/DE2004002648
申请日：2004-12-02
申请人： PAC TECH GMBH , ZAKEL ELKE , AZDASHT GHASSEM
发明人： ZAKEL ELKE , AZDASHT GHASSEM
IPC分类号： H01L23/10 , H01L21/50 , H01L21/60 , H01L21/98 , H01L25/065 , H01S5/02 , H01S5/042 , H01S5/40
CPC分类号： H01L23/10 , B23K26/0063 , B23K35/262 , B23K35/3013 , B23K2201/40 , H01L21/50 , H01L25/0657 , H01L25/50 , H01L2224/16 , H01L2924/01079
摘要： A method and device for the alternating contacting of two wafer-type component composite arrangements (12,14) from a plurality of connected similar components, particularly a semiconductor wafer with a functional component wafer, for the production of electronic modules on a wafer plane, wherein the two component composite arrangements provided with contact metallizations respectively on the opposite-lying contact surfaces (38,39) thereof are pressed against each other in order to form contact pairs with the contact metallizations thereof and the contacting of the contact metallizations occurs by backward impingement of one compound composite arrangement (12) with laser radiation, wherein the wavelength of the laser radiation is selected according to the absorption degree of the backwardly impinged upon component-composite arrangement such that transmission of the laser radiation by the backwardly impinged upon component-composite arrangement is substantially prohibited or absorption of the laser radiation occurs essentially in the contact metallizations of one or both component-composite arrangements. .
摘要翻译：方法和装置的多个连续的相同部件形成的，特别是具有官能组分晶片的半导体晶片，以产生在晶片级的电子组件的两个晶片载型元件复合组件（12，14），其中，或相互接触所述带来两个在每种情况下其用于与被压在其中的覆盖物位置的接触金属化形成接触对设置有接触金属成分复合组件相互面对的接触表面（38，39）上进行接触金属化结合在一起对彼此和接触金属化的由后接触进行用激光辐射（20），其中，所述激光辐射的依赖波长上向后施加部件的吸收度Ve的将所述一个部件的复合组件（12）被选择rbundanordnung因此省略了激光辐射的传输，或由后作用组分复合结构基本上发生在基本上一个的接触金属化或两个组分复合结构的激光辐射的吸收。

2. 发明申请

WO2012103868A3 METHOD AND DEVICE FOR THE ELECTRICAL BONDING OF CONNECTION AREAS OF TWO SUBSTRATES BY LASER SOLDERING USING A GASEOUS FLUX MEDIUM 审中-公开
标题翻译：方法和装置用于电连接的接触两块基板表面用激光焊锡与气态流体流量的应用
公开(公告)号：WO2012103868A3
公开(公告)日：2012-09-27
申请号：PCT/DE2012000068
申请日：2012-01-30
申请人： PAC TECH GMBH , AZDASHT GHASSEM
发明人： AZDASHT GHASSEM
IPC分类号： H01L21/60 , H01L21/67
CPC分类号： B23K1/0056 , B23K26/02 , B23K35/362 , H01L24/16 , H01L24/75 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/16145 , H01L2224/16221 , H01L2224/7501 , H01L2224/75101 , H01L2224/75263 , H01L2224/81065 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81224 , H01L2224/81815 , H01L2224/81907 , H01L2224/8191 , H01L2224/81986 , H01L2225/06513 , H01L2225/06517 , H01L2924/014 , H01L2924/12042 , H01L2924/00
摘要： The present invention relates to a method for the electrical bonding of connection areas of two substrates (6, 7), more particularly of a chip (6) and of a carrier substrate (7), two wafers or a plurality of superposed chips and a substrate. The method according to the invention is performed in two successive phases, in a first phase, the chip (6) being positioned with its connection areas against connection areas of the substrate (7) and rearward application of laser energy (5) to the chip (6), and, in a subsequent second phase, in a housing (3), a flux medium (for example a nitrogen-formic acid mixture) being applied and at the same time a reflow being performed by means of rearward application of laser energy (5) to the chip (6), and a process of purging the housing interior subsequently being performed. The invention also concerns a device for performing the second phase of the method according to the invention. The device according to the invention for performing the second phase of the method comprises a support table (1) and a housing (3), which together with a top of the support table (1) forms a housing interior, in which the component arrangement is positioned, and a laser light source (5), which is oriented such that the laser radiation impinges on the first substrate (6) on the rear side.
摘要翻译：本发明涉及一种用于电接触两块基板（6,7）的连接表面，特别是芯片（6）和支撑衬底（7），两个晶片或多个堆叠的芯片和基板的。本发明的方法是在两个连续的阶段，其中，在所述芯片的第一相（6），其相对于基板的焊盘垫（7）定位，并用激光能携带的芯片（6）的背面曝光以进行（5）和下面第二阶段中，流动介质的应用程序（例如，氮气甲酸混合物）和回流，随后由壳体内部的冲洗是在壳体（3）由芯片（6）的激光能量（5）的后部装载同时进行为好。此外，本发明涉及一种用于实施本发明方法的第二阶段的设备。用于执行该方法的第二阶段中的本发明的装置包括一个支撑台（1）和壳体（3）与所述支撑台（1）的壳体的内部，其中，所述部件布置被定位的一顶部和一激光光源（5）一起形成，其被定向成使得激光辐射返回到所述第一衬底（6）适用。

3. 发明申请

WO2012103868A2 METHOD AND DEVICE FOR ELECTRICALLY CONTACT-CONNECTING CONNECTION AREAS OF TWO SUBSTRATES 审中-公开
标题翻译：方法和设备两块基板的电气连接接触面
公开(公告)号：WO2012103868A2
公开(公告)日：2012-08-09
申请号：PCT/DE2012000068
申请日：2012-01-30
申请人： PAC TECH GMBH , AZDASHT GHASSEM
发明人： AZDASHT GHASSEM
IPC分类号： H01L21/60
CPC分类号： B23K1/0056 , B23K26/02 , B23K35/362 , H01L24/16 , H01L24/75 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/16145 , H01L2224/16221 , H01L2224/7501 , H01L2224/75101 , H01L2224/75263 , H01L2224/81065 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81224 , H01L2224/81815 , H01L2224/81907 , H01L2224/8191 , H01L2224/81986 , H01L2225/06513 , H01L2225/06517 , H01L2924/014 , H01L2924/12042 , H01L2924/00
摘要： The present invention relates to a method for electrically contact-connecting connection areas of two substrates (6, 7), more particularly of a chip (6) and of a carrier substrate (7). Furthermore, the invention relates to a device for performing a second phase of the method according to the invention. The method according to the invention is effected in two successive phases, wherein, in a first phase, the chip (6) is positioned with its connection areas against connection areas of the substrate (7) and laser energy (5) is applied to the chip (6) at the rear and, in a subsequent second phase, in a housing (3), a flux medium is applied and at the same time a reflow is performed by means of laser energy (5) being applied to the chip (6) at the rear, and a process of purging the housing interior is subsequently performed. The device according to the invention for performing a second phase of the method comprises a carrier table (1) and a housing (3), which together with a top side of the carrier table (1) forms a housing interior, in which the component arrangement is positioned, and also a laser light source (5), which is oriented in such a way that the laser radiation impinges on the first substrate (6) on the rear side.
摘要翻译：本发明涉及一种用于电接触两块基板（6,7）的连接表面，特别是芯片（6）和支撑衬底（7）。此外，本发明涉及一种用于实施本发明方法的第二阶段中的装置，本发明的方法是在两个连续的阶段进行，其中，在所述芯片（6）以其垫相对于基板的焊盘的第一阶段（7）定位和后冲击激光能量（5）（6），并且在一个壳体（3）在由流动介质和同时回流用激光能量作用由芯片（6）的后部装载随后的第二阶段（5），然后漂洗进行的芯片的壳体内部被执行。用于实施该方法的第二阶段中的本发明的装置包括一个支撑台（1）和壳体（3）与所述支撑台的顶部一起形成（1）的壳体的内部，其中，所述部件布置被定位和一个激光光源（5），其被定向成使得激光辐射返回到所述第一衬底（6）适用。

4. 发明申请

WO2011127907A3 METHOD AND DEVICE FOR FORMING SOLDER DEPOSITS ON RAISED CONTACT METALLIZATION STRUCTURES 审中-公开
标题翻译：方法和设备训练对升高的接触焊料沉积物
公开(公告)号：WO2011127907A3
公开(公告)日：2012-05-31
申请号：PCT/DE2011000394
申请日：2011-04-13
申请人： PAC TECH GMBH , AZDASHT GHASSEM
发明人： AZDASHT GHASSEM
IPC分类号： H01L21/60 , B23K3/06 , H01L21/683 , H01L23/485
CPC分类号： B23K1/20 , B23K1/0056 , B23K3/06 , B23K3/0607 , H01L21/6835 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/742 , H01L2224/0401 , H01L2224/11002 , H01L2224/11003 , H01L2224/11822 , H01L2224/13099 , H01L2224/7515 , H01L2924/00 , H01L2924/00013 , H01L2924/01058 , H01L2924/01068 , H01L2924/014 , H01L2924/12042
摘要： The invention relates to a method for forming solder deposits (34) on raised contact metallization structures (24) of connection surfaces (23) of a substrate (19) designed in particular as a semiconductor component, wherein wetting surfaces (26) of the contact metallization structures (24) are brought in contact with a solder material layer (15) arranged on a solder material carrier (13), the substrate (19) is heated and the temperature of the solder material layer (15) is controlled at least during the duration of the contact, and subsequently the contact metallization structures (24) wetted with solder material (34) and the solder material layer (15) are separated, thus making it possible to prevent the formation of contact bridges between adjoining contact metallization structures (24) resulting from the surface tension of fused solder material when the wetting surfaces (26) of the contact metallization structures (24) and the solder material layer (15) are separated.
摘要翻译：本发明涉及一种用于在基板的垫的升高的接触（24）（23）上形成焊料沉积物（34），特别是形成为半导体装置（19），其中，在物理接触的接触金属化（24）的润湿表面（26）与一个上的一个焊接材料（15）的布置焊接材料载体（13）被带到，至少衬底（19）和所述钎焊材料层的温度（15）的触摸接触加热的持续时间期间被执行，并且随后所述的触摸接触焊料材料的分离（34）润湿接触金属化（24）和所述钎焊材料层（15）。这可以防止它涉及在接触金属化（24）和所述钎焊材料层（15）的润湿表面（26）之间的触摸接触的分离由于熔融焊料材料的表面张力，以形成相邻的接触金属化（24）之间的接触桥。

5. 发明申请

WO2009117992A3 TEST CONTACT ARRANGEMENT 审中-公开
标题翻译：测试接触
公开(公告)号：WO2009117992A3
公开(公告)日：2009-12-30
申请号：PCT/DE2009000393
申请日：2009-03-27
申请人： PAC TECH GMBH , AZDASHT GHASSEM
发明人： AZDASHT GHASSEM
IPC分类号： G01R1/073 , G01R1/067
CPC分类号： G01R1/07342 , G01R1/06727 , G01R1/06733
摘要： The invention relates to a test contact arrangement (15) for testing semiconductor components, comprising at least one test contact (10) arranged in a test contact frame (13) of the type of a cantilever arm, a fastening base (12) and a contact arm (30) which is provided with a contact tip (11) and connected to the fastening base. According to the invention, the fastening base is inserted with its fastening projection (16) into a frame opening (14) of the test contact frame in such a manner that a lower edge (17) of the fastening projection is essentially aligned flush with a lower side (18) of the test contact frame.
摘要翻译：本发明涉及一种具有安装底座（12）和连接到所述安装基座接触臂（30）的一部分与接触尖端的测试触点（15），用于与在测试接触的至少一个（13）的半导体器件的测试布置，在悬臂梁的接触探针（10）的方式构成（11），其中，所述安装基座是用来与测试触点的框架开口（14）的附接突起（16）以这样的方式，即一个底边（17）与所述固定突起对准是与测试接触的下侧（18）大致齐平。

6. 发明申请

WO2006105782A3 METHOD AND DEVICE FOR TRANSFERRING A CHIP TO A CONTACT SUBSTRATE 审中-公开
标题翻译：方法和设备的芯片到接触衬底转移
公开(公告)号：WO2006105782A3
公开(公告)日：2007-08-30
申请号：PCT/DE2006000628
申请日：2006-04-10
申请人： PAC TECH GMBH , ZAKEL ELKE , AZDASHT GHASSEM
发明人： ZAKEL ELKE , AZDASHT GHASSEM
IPC分类号： H01L21/60
CPC分类号： H01L21/6835 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L24/31 , H01L24/75 , H01L24/83 , H01L24/86 , H01L2221/68327 , H01L2221/68354 , H01L2224/16 , H01L2224/2929 , H01L2224/293 , H01L2224/75 , H01L2224/75263 , H01L2224/75314 , H01L2224/7565 , H01L2224/7965 , H01L2224/81005 , H01L2224/81224 , H01L2224/81801 , H01L2224/83192 , H01L2224/83851 , H01L2924/01006 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/19043 , H01L2924/00014
摘要： The invention relates to a method and device for transferring a chip (18), which is arranged on a transfer substrate (26), to a contact substrate (50) and for contacting the chip to the contact substrate, during which the chip, which is adhesively attached via its rear side (19) to a holding surface of the transfer substrate, said holding surface facing the contact substrate. The rear side of the chip is subjected to the action of laser energy passing through the transfer substrate, and a pressing device (45, 46) acting upon the rear of the chip and through the transfer substrate brings the chip, via its chip contacts (59, 60) located opposite a contact surface (58) of the contact substrate, into contact with substrate contacts (56, 57) located on the contact surface, and a thermal connection is established between the chip contacts and the substrate contacts.
摘要翻译：对于设置在转印基板上传送（26）的接触基板上的芯片（50）和与接触基板，其中一个接触基板上的面对接收与它的后侧（19）的转印基板的表面上的芯片接触粘结的方法和设备（18）安装的芯片向后通过激光能量和芯片返回穿过转印基板的转印基板至（45，46）通过压制装置来敦促与接触的接触基板的其一个接触表面（58）相对地布置芯片触点（59，60）与所述接触表面上布置衬底触点（56，57）被放置并在芯片触点和衬底触点之间的热连接被产生。

7. 发明申请

WO2006005327A2 METHOD AND DEVICE FOR THE ALTERNATE CONTACTING OF TWO WAFERS 审中-公开
标题翻译：方法和设备相互接触两块基板
公开(公告)号：WO2006005327A2
公开(公告)日：2006-01-19
申请号：PCT/DE2005001230
申请日：2005-07-11
申请人： PAC TECH GMBH , ZAKEL ELKE , AZDASHT GHASSEM
发明人： ZAKEL ELKE , AZDASHT GHASSEM
IPC分类号： H01L21/60
CPC分类号： H01L24/26 , H01L24/80 , H01L24/83 , H01L25/50 , H01L2224/83224 , H01L2224/83801 , H01L2924/01015 , H01L2924/01033 , H01L2924/01057 , H01L2924/19043
摘要： The invention relates to a device for the alternate contacting of two wafer-like component/composite arrangements of a number of connected similar components, in particular of a semiconductor wafer (12) with a functional component wafer (14), for the generation of electronic modules on wafer planes, whereby the component/composite arrangements are each arranged on a mounting device (11; 13) and the contact pressure necessary for contact between contact metallisations for contacting on the component/composite arrangements is generated by a vacuum in a contact chamber, defined by the mounting devices, housing the component/composite arrangements and the contacting of the contact metallisations is achieved by a back energising of a component/composite arrangement.
摘要翻译：的方法和装置与功能元件的晶片（14），相同的部件形成的多个连续的两个晶片载型组分复合结构的相互接触，尤其是半导体晶片（12），以产生在晶片级的电子组件，其中，所述Bauelement- 复合组件上的Aufnahmeeinrich每个处理（11; 13）被布置和所必需的之间产生接触压力的接触要被粘合在一起的部件的复合结构的接触金属化，使得在组件的复合结构接收，由接收定义装置的接触面积产生真空是，并且接触金属化的由部件复合配置的后冲击能量的接触。

8. 发明申请

WO03003444A3 METHOD FOR PRODUCING A SUBSTRATE ARRANGEMENT 审中-公开
标题翻译：一种用于生产衬底装置
公开(公告)号：WO03003444A3
公开(公告)日：2003-07-31
申请号：PCT/DE0202327
申请日：2002-06-26
申请人： PAC TECH GMBH , ZAKEL ELKE , AZDASHT GHASSEM
发明人： ZAKEL ELKE , AZDASHT GHASSEM
IPC分类号： H01L21/60 , H01L21/68 , H05K3/34 , H01L23/485
CPC分类号： H05K3/3436 , H01L21/6835 , H01L24/11 , H01L24/81 , H01L2224/05569 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/1147 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13099 , H01L2224/16 , H01L2224/81801 , H01L2924/00013 , H01L2924/01013 , H01L2924/01033 , H01L2924/01068 , H01L2924/014 , H01L2924/12042 , H05K3/3478 , H05K3/3494 , H05K2201/0379 , H05K2201/10977 , H05K2203/041 , H05K2203/043 , H05K2203/107 , Y02P70/613 , H01L2924/00014 , H01L2924/00
摘要： The invention relates to a method for producing a substrate arrangement, having the following steps: preparing a substrate and contacting the connecting surfaces of the substrate to internal contacts in a wiring system, applying contact material to external contacts defining an external connecting surface arrangement, said contacts being associated with the wiring system, in order to form base contact humps (31), applying connecting material to the base contact humps in order to form contact hump tops which are connected to the base contact humps, said connecting material being applied in the form of moulded parts (35). The formation of the contact hump tops occurs by at least partially melting the connecting material moulded parts as a result of laser energy which is impinged thereon.
摘要翻译：本发明涉及一种用于制备的衬底组件，其包括以下步骤：提供接合材料的衬底，并用布线层的内部接触，接触材料的沉积基板的端子区域的接触到外部端子面布置限定了再布线的外部接触以形成基极接触凸块（31），应用如果用于形成连接到所述基极接触的基极接触凸块凸块凸块制品，其中所述粘合材料为复合材料管件（35），并通过由激光能量的应用的装置中的至少相称熔化接合材料成型片形成凸块制品的应用。

9. 发明专利

DE102017110830A1 Anordnung und Verfahren zum Aufbringen von Lotkugeln auf ein Substrat 未知
公开(公告)号：DE102017110830A1
公开(公告)日：2018-11-22
申请号：DE102017110830
申请日：2017-05-18
申请人： AZDASHT GHASSEM
发明人： AZDASHT GHASSEM
IPC分类号： B23K3/06
摘要： Eine Anordnung (100) zum Aufbringen von Lot aus Lotkugeln (12) auf ein Substrat (104), enthaltend ein Reservoir (14) mit einer Vielzahl von Lotkugeln (12); eine Ausgabe-Öffnung (26) zum Ausgeben einer einzelnen Lotkugel (12); einen zwischen Reservoir (14) und Ausgabe-Öffnung (26) vorgesehenen Zuführkanal (48) zum Zuführen von Lotkugeln (12) aus dem Reservoir (14) zur Ausgabe-Öffnung (26);ist dadurch gekennzeichnet, dass der Zuführkanal (48) einen Öffnungsquerschnitt mit einem Durchmesser hat, der größer ist, als der Durchmesser einer der verwendeten Lotkugeln (12) und kleiner als der Durchmesser von zwei der verwendeten Lotkugeln (12); einen Saugkanal (68, 70, 72), der in dem Zuführkanal (48) mündet und der im Übergangsbereich (62, 64, 66) zwischen Saugkanal (68, 70, 72) und Zuführkanal (48) einen Querschnitt hat, der kleiner ist als der Querschnitt einer der verwendeten Lotkugeln (12); Mittel zur Erzeugung einer Druckdifferenz zwischen dem Zuführkanal (48) und dem Saugkanal (68, 70, 72), so dass der Druck in dem Saugkanal (68, 70, 72) geringer ist als in dem Zuführkanal (48) und eine im Zuführkanal (48) befindliche Lotkugel (12) am Übergangsbereich (62, 64, 66) des Saugkanals (68, 70, 72) ansaugbar ist; und Steuermittel zur Steuerung der Druckdifferenz derart, dass wenigstens eine Lotkugel (12) bei einer ersten Druckdifferenz am Übergangsbereich zwischen Saugkanal (68, 70, 72) und Zuführkanal (48) zurückgehalten wird und die Zufuhr weiterer Lotkugeln (12) blockiert und bei einer zweiten Druckdifferenz freigegeben wird. Mehrere ausrichtbare Module können zu einer als Ganzes ausrichtbaren Modulbaugruppe vereinigt werden.

10. 发明申请

WO9625263A2 PROCESS FOR BONDING A FLEXIBLE SUBSTRATE TO A CHIP 审中-公开
标题翻译：方法连接柔性衬底，芯片
公开(公告)号：WO9625263A2
公开(公告)日：1996-08-22
申请号：PCT/DE9600228
申请日：1996-02-14
申请人： FRAUNHOFER GES FORSCHUNG , AZDASHT GHASSEM , ZAKEL ELKE , REICHL HERBERT
发明人： AZDASHT GHASSEM , ZAKEL ELKE , REICHL HERBERT
IPC分类号： B23K26/00 , B23K20/10 , H01L21/60 , H01L21/603 , H05K1/18 , H05K3/32 , B23K1/005
CPC分类号： H05K3/328 , B23K20/10 , B23K2201/18 , B23K2201/40 , H01L24/81 , H01L2224/81205 , H01L2224/81224 , H01L2224/81801 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/0106 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H05K1/189 , H05K2201/0108 , H05K2201/10719 , H05K2203/0285 , H05K2203/107
摘要： The invention concerns a process for thermally bonding contact elements (14, 15) of a flexible film substrate (10) to metallized contact areas (17) of an electronic component (12). The flexible substrate comprises a carrier layer (13) of transparent plastics. The rear of the contact elements is acted on by energy in the form of laser radiation (11). The transparency of the carrier layer (13), the absorption of the contact elements (14, 15) and the wavelength of the laser radiation (11) are adapted to one another such that the laser radiation is substantially guided through the carrier layer (13) and absorbed in the contact elements (14, 15). Pressure acts on the substrate (10) such that the contact elements (14, 15) of the substrate (10) and the metallized contact areas (17) of the component (12) abut one another in the region of the optical fibre orientation point during the action of the laser radiation (11).
摘要翻译：一种用于热接触元件的柔性薄膜基板的与接触金属化的电子部件（12），其中，所述柔性基板包括载体层的连接（14，15）（10）（17）处理（13）制成的背面侧的接触元件的透明塑料和通电通过激光辐射的手段发生这里（11），其中所述背衬层（13），接触元件的吸收（14，15）和所述激光辐射（11）的波长的透明度被协调，使得激光辐射是基本上穿过支撑层（13）通过并接触元件（14，15）被吸收，在基板（10）的加压使得所述部件（12）的过程中的所述衬底的所述接触元件（14，15）（10）和接触金属化（17）邻接暴露于光纤彼此的着陆点的区域中的激光辐射（11）。

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