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1. 发明专利

JPH0796259A APPARATUS AND METHOD FOR GASEOUS PHASE REMOVAL OF REFUSE FROM SURFACE OF SUBSTRATE AND PROCESS APPARATUS AND LINE 失效
公开(公告)号：JPH0796259A
公开(公告)日：1995-04-11
申请号：JP24499293
申请日：1993-09-30
申请人： OMI TADAHIRO , ULVAC CORP
发明人： OMI TADAHIRO , YAMAKAWA HIROYUKI , HAYASHI CHIKARA
IPC分类号： B08B5/02 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To remove the refuse from the surface of a substrate by providing a treatment tank, the means holding the substrate within the treatment tank, a means supplying specific gas to the surface of the substrate and a means generating Bernoulli pressure difference on the surface of the substrate. CONSTITUTION:A silicon wafer 107 is inserted in a substrate receiving tank 130 and, after the atmosphere in the tank 130 is sufficiently replaced with gas, for example, N2 gas so that the concn. of the moisture in the tank becomes 10ppm or less, the silicon wafer 107 is fixed on the support stand 108 within a vacuum treatment tank 101 through a substrate feed chamber 131. Next, an opening and closing valve 113 is opened and the N2 gas is sprayed on the silicon wafer 101 through a blowoff port 111. Further, a high pressure gas control part 117 is operated to generate intermittent pressure fluctuations from the blowoff port 111, for example, at a rate of 10 times/min. By this constitution, the blown-off N2 gas and the refuse separated from the silicon wafer 107 are discharged out of the system through an exhaust passage 122.

2. 发明专利

DE2950997A1 未知
公开(公告)号：DE2950997A1
公开(公告)日：1981-06-25
申请号：DE2950997
申请日：1979-12-18
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： C23C14/34 , C23C14/56 , C23C15/00

3. 发明专利

CH646072A5 未知
公开(公告)号：CH646072A5
公开(公告)日：1984-11-15
申请号：CH19579
申请日：1979-01-09
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： F16L23/16 , B01J3/00 , B01J19/02 , C23C14/06 , C23C14/56 , C23C13/04

4. 发明专利

CH643303A5 未知
公开(公告)号：CH643303A5
公开(公告)日：1984-05-30
申请号：CH1147879
申请日：1979-12-27
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： C23C14/34 , C23C14/56 , C23C15/00

5. 发明专利

FR2472619A1 未知
公开(公告)号：FR2472619A1
公开(公告)日：1981-07-03
申请号：FR7932152
申请日：1979-12-27
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： C23C14/34 , C23C14/56 , C23C15/00
摘要： The appliance consists of a chamber (10) which is fitted in an electrically insulated manner with a cathode support (22) for a cathode (20) with a cathode material layer (24) to be sputtered. An anode (26) is fashioned so as to retain a substrate (28) to be coated. The surfaces (30, 32) of the cathode material layer (24) and of the substrate (28) are parallel to one another and are arranged so as to be tilted with respect to a horizontal plane. The appliance is operated with an inert atmosphere having a pressure of 6.5-1.3.10 mbar and a voltage of 800 V. When the substrate is coated by cathode sputtering, a uniform film is formed thereon, and the cathode material layer (24) can be used up virtually completely, without pieces dropping down owing to fracturing and thus being lost to the operation.

6. 发明专利

DE2900057A1 未知
公开(公告)号：DE2900057A1
公开(公告)日：1980-03-27
申请号：DE2900057
申请日：1979-01-02
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： F16L23/16 , B01J3/00 , B01J19/02 , C23C14/06 , C23C14/56 , B01J1/20

7. 发明专利

FR2423551A1 Vacuum vapour deposition appts. using rotating drum - for continuous coating of small objects such as nuts and bolts in bulk 未知
公开(公告)号：FR2423551A1
公开(公告)日：1979-11-16
申请号：FR7827410
申请日：1978-09-25
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： C23C14/32 , C23C14/22 , C23C14/56 , C23C13/08
摘要： The appts. consists of a long chamber (1)contg. a perforated drum (2) rotated by a motor. both the chamber and drum are horizontal; and chamber (1) is connected to a vacuum pump. Inside drum (2) is a holder for a row of boats contg. material to be evaporated; and the periphery of the durm is provided with an axial row of flanges joined by plates to make pockets into which the small workpieces are fed in bulk. During the rotation of drum (2), guide plates direct the workpieces into successive pockets so the pieces travel to an outlet hopper located at one end of chamber (1). Electron beams may be used to heat the coating material being evaporated.

8. 发明专利

DE1539134A1 未知
公开(公告)号：DE1539134A1
公开(公告)日：1969-06-19
申请号：DE1539134
申请日：1965-12-29
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： H01J41/20 , H01J41/00
摘要： 1,130,145. lonization groups; getter-ion pumps; ion sources. NIHON SHINKU GIJUTSU K.K. 30 Dec., 1965 [30 Dec., 1964; 8 Jan., 1965], No. 55238/65. Heading H1D. In a magnetically confined electric discharge apparatus such as an ionization gauge or getter-ion pump ionizing electrons are derived in the ionization region between anode and cathode electrodes from a surface which emits electrons under irradiation by radioactive material. In a getter ion pump, Fig. 1, comprising a hollow anode 20f and upper and lower cathode plates 15f, an annular radioactive plate 56 is secured through an intermediate annular non-radioactive plate 54 to the underside of the lower cathode plate adjacent a bore 52 provided in the lower cathode plate. The outer casing 12f is of stainless steel and emits electrons in the region 58 which pass through the bore 52 to the ionization space 36. The radio-active material is preferably Ni 63 or Sr 90 emitting #-rays. The bore 52 may be located at the centre of the cathode plate instead of off-centre. The radio-active source may be located, Fig. 4 (not shown), at position 58, on the inner surface of the casing 12f, instead of at 56 and an electrostatic field may be set up around the bore 52 to prevent the passage of low velocity electrons. The lower cathode plate may be a reticulated plate and a plurality of radio-active elements may be provided on the inner surface of the casing. In a modification, Fig. 2 (not shown), with a cylindrical openended cathode (15g) surrounding a central rod anode (20g), a radio-active element (28g) is mounted on the inner surface of the cathode and auxiliary annular end-plates- (58g) are provided which emit electrons in response to the radioactive radiation. The cathode and anode may be interchanged. In another modification, Fig. 3 (not shown), with a cylindrical openended anode (20h) and upper and lower cathode end-plates (21h, 23h), a radio-active element (28h) is mounted in line with the lower cathode end-plate and an auxiliary, electron-emitting, electrode (58h) is mounted in line with the upper cathode end-plate. In all these embodiments the cathode is composed of, or contains, Mo, Cr, W, Ta, Nb, Fe, Ti, Zr, Ni, Ba, A1, Th, Mg, Ca, or Sr, and/or a material coated with such a substance, while the anode is composed of a reactive substance or of stainless steel. The auxiliary electron, emitting electrodes or plates may comprise the oxide, carbide or boride of an alkaline earth metal or sheet-metal coated with such substance and may contain a radioactive substance. The radioactive element may be constituted by such composite element. A suitable composite element may comprise Ni 63 with a film of Si or Ge. In an ionization gauge, Fig. 5, comprising an open cylindrical cathode 116 provided with a plurality of openings 115 and a surrounding open cylindrical anode 117, a plurality of radioactive sources 121 are secured to the inner surface of the cathode around the circumferences of the openings 115 and an inner auxiliary, rod electrode 114 is the electron emitter. The anode and cathode may comprise Mo, Re, W, Ta, Fe, Ni, Pt, Au, Ir, Al or Cu and/or alloys thereof and the auxiliary electrode 114 may comprise any of these substances and/or the oxides, carbides or borides of alkaline earth metals. The anode, cathode and auxiliary electrode may be lined with these substances. Preferably, the anode and cathode comprise Pt or Au coated Mo, and the auxiliary electrode W lined with ThO 2 . Ni 63 is used for the radio-active sources. In a modification, Fig. 7 (not shown), the anode and the auxiliary electrode are interchanged with the radiation sources (121a) provided on the outer surface of the cathode (116a) and in a further modification. Fig. 8 (not shown), the auxiliary electrode is constituted by an envelope casing (114b). In another modification, Fig. 9 (not shown), a rectangular frame anode (117c) is located between upper and lower cathode plates (116c 1 , 116c 11 ) and a radio-active source plate (121c) and an auxiliary electron emitting electrode plate (114c) are located to one side of the anode-cathode assembly with the radio-active and auxiliary plates (121c, 114c), respectively, in line with the lower and upper cathode plates (116c 11 , 116c 1 ). In another modification, Fig. 10 (not shown) having an anode-cathode arrangement and an outer casing generally similar to that of Fig. 1, a bore (115d) and a radio-active source (121d) are provided off-centre of the upper cathode plate (1 16d 1 ) and an opening (140) is provided at the centre of the lower cathode plate (116d 11 ) through which ions travel to a collector (143) located at the bottom of a tubular extension 141 of the envelope casing. The ion current is a measure of the constant current due to the "ionization of neutral molecules. A mesh electrode may be provided just below the opening (140) in the lower cathode plate (116d 11 ) to prevent the escape of electrons and the ion collector (143) may comprise an electron multiplier. Additional electron repelling grid electrodes may be provided between the cathode plates. Ion sources.-Mention is made of the application of the invention to ion sources for mass spectrometers on partial pressure detectors.

9. 发明专利

JPH02305976A ETCHING DEVICE 失效
公开(公告)号：JPH02305976A
公开(公告)日：1990-12-19
申请号：JP12488689
申请日：1989-05-18
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform uniform etching work to a thin film on the surface of a base plate by allowing gas to flow between the base plate with the thin film formed thereon and a cathode opposed thereto in the case of fitting the base plate to an anode and discharging plasma between the anode and the cathode to perform etching work for the thin film formed on the base plate. CONSTITUTION:An endless beltlike anode 5 is endlessly turned by the pulleys 5a, 5b in a vacuum treatment chamber equipped with an introducing chamber 8 and a takeout chamber 9 forward and backward. A base plate 7 to be worked which has a thin film on the surface thereof is freely detachably fitted to the beltlike anode. While rotating the anodic belt 5, discharge is caused between a cathode 4 connected to a high frequency power source 6 and the base plate 7. Both radicals or ions in the generated plasma and the thin film on the base plate 7 are allowed to react with each other and etching is performed. In this case, gas is introduced through a gas introducing port 2 in the progressing side of the belt 5. An etching reaction product is discharged through an exhaust pipe 3 provided to the introducing side of the belt 5. Thereby the reaction product is always removed from the surface of the base plate 7 and uniform etching work is performed to the thin film on the bash plate 7.

10. 发明专利

JPS63111937A VACUUM TREATING EQUIPMENT 失效
公开(公告)号：JPS63111937A
公开(公告)日：1988-05-17
申请号：JP25463886
申请日：1986-10-28
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： B01J3/02 , B01J3/03
摘要： PURPOSE:To prevent the infiltration of the harmful atmosphere into a vacuum treating chamber by providing freely liftable and rotatable transport equipment for placing a material to be treated on a pallet and transporting the material, and furnishing equipment for supplying purge gas into a container on the vacuum treating chamber side. CONSTITUTION:The material to be treated is placed on the pallet 8 through the flexible curtain 6 of the urging container 5, and the purge gas is introduced from the purge gas supply equipment 11 through a purge gas inlet 10 to replace the inside of the purging container 5 with the introduced gas. A vacuum valve 4 is then opened, and the transport equipment 9 is lifted up and down and rotated to transport the material to be treated on the pallet 8 in the purging container 5 into the vacuum treating chamber 1 through an inlet and outlet port 1a. The vacuum valve 4 is then closed, the inside of the vacuum treating chamber 1 is evacuated to a desired vacuum by an exhauster 2, and then the material is treated in the vacuum treating chamber 1.

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