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    • 3. 发明授权
    • High speed sensor system using a level shift circuit
    • 高速传感器系统采用电平移位电路
    • US4984204A
    • 1991-01-08
    • US303472
    • 1989-01-30
    • Yoichi SatoMasao MizukamiToshiyuki Ookuma
    • Yoichi SatoMasao MizukamiToshiyuki Ookuma
    • G11C7/06G11C8/16
    • G11C7/062G11C8/16
    • A semiconductor memory device has a sense amplifier which is constructed with a level shift circuit having an input which senses the change in a data line from an initial precharged level to a level near the vicinity of the supply voltage level which corresponds to data reading amounts from a memory cell during the reading mode of operation of the memory. The level shift circuit, in response to a memory cell reading signals, provides a level shifted output to the input terminal of a differential sense amplifier circuit, the level shifted output being in the vicinity of the operating point of the differential sense amplifier circuit. The level shift circuit includes a current amplifier having an output terminal that is formed with a series connecting node of a current amplifying transistor and a current source.
    • 半导体存储器件具有读出放大器,该读出放大器由具有输入的电平移位电路构成,该输入检测从初始预充电电平到数据线附近的电平变化附近的数据线对应于来自 在存储器的操作的读取模式期间的存储器单元。 电平移位电路响应于存储器单元读取信号,向差分读出放大器电路的输入端提供电平移位输出,电平移位输出位于差分读出放大器电路的工作点附近。 电平移位电路包括具有由电流放大晶体管和电流源的串联连接节点形成的输出端子的电流放大器。
    • 4. 发明授权
    • High speed sensor system using a level shift circuit
    • 高速传感器系统采用电平移位电路
    • US5053652A
    • 1991-10-01
    • US637591
    • 1991-01-04
    • Yoichi SatoMasao MizukamiToshiyuki Ookuma
    • Yoichi SatoMasao MizukamiToshiyuki Ookuma
    • G11C7/06G11C8/16
    • G11C7/062G11C8/16
    • A semiconductor memory device has a sense amplifier which is constructed with a level shift circuit having an input which senses the change in a data line from an initial precharged level to a level near the vicinity of the supply voltage level which corresponds to data reading amounts from a memory cell during the reading mode of operation of the memory. The level shift circuit, in response to a memory cell reading signals, provides a level shifted outpout to the input terminal of a differential sense amplifier circuit, the level shifted output being in the vicinity of the operating point of the differential sense amplifier circuit. The level shift circuit includes a current amplifier having an output terminal that is formed with a series connecting node of a current amplifying transistor and a current source.
    • 半导体存储器件具有读出放大器,该读出放大器由具有输入的电平移位电路构成,该输入检测从初始预充电电平到数据线附近的电平变化附近的数据线对应于来自 在存储器的操作的读取模式期间的存储器单元。 电平移位电路响应于存储单元读取信号,向差分读出放大器电路的输入端提供电平偏移输出,电平移位输出位于差分读出放大器电路的工作点附近。 电平移位电路包括具有由电流放大晶体管和电流源的串联连接节点形成的输出端子的电流放大器。