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    • 4. 发明授权
    • Thin film magnetic head and process for producing same
    • 薄膜磁头及其制造方法
    • US5793579A
    • 1998-08-11
    • US756520
    • 1996-11-26
    • Tomomi YamamotoShinji KobayashiNaoto Matono
    • Tomomi YamamotoShinji KobayashiNaoto Matono
    • G11B5/31G11B5/147
    • G11B5/3106G11B5/3116G11B5/313G11B5/3163
    • A process for producing a thin film magnetic head comprises a first step of forming a magnetic layer 20 on the surface of a gap spacer layer 9, a second step of forming on the surface of the magnetic layer 20 a lower resist layer 21 shaped to have a smaller width than an upper core layer 11 when seen from above and forming on the resist layer 21 an upper resist layer 22 projecting outward beyond opposite side faces of the resist layer 21 and shaped in conformity with the shape of the upper core layer 11 when seen from above, a third step of shaping the magnetic layer 20 into the upper core layer 11 by ion beam-etching the magnetic layer 20, and a fourth step of removing the lower resist layer 21 and the upper resist layer 22. The core layer 11 consequently formed has a surface including a pair of curved faces R, R smoothly connecting opposite side faces of the layer 11 with respect to the direction of width of a track to the top face of the layer 11, enabling a protective layer forming step to provide a flawless protective layer 14.
    • 一种制造薄膜磁头的方法包括在间隔层9的表面上形成磁性层20的第一步骤,在磁性层20的表面上形成形成为具有下列抗蚀剂层21的第二步骤: 当从上方观察时,比上芯层11的宽度小,并且在抗蚀剂层21上形成向上延伸超过抗蚀剂层21的相对侧面的上抗蚀剂层22,并且形成与上芯层11的形状一致 从上方观察到的是通过离子束蚀刻磁性层20将磁性层20成形为上部芯层11的第三步骤,以及去除下部抗蚀剂层21和上部抗蚀剂层22的第四步骤。芯层 11具有包括一对曲面R,R,其平滑地将层11的相对侧面相对于层11的顶面的宽度方向连接起来,从而能够形成保护层 提供无瑕疵的保护层14。
    • 6. 发明授权
    • Magneto-resistive type magnetic head with a shunt layer of molybdenum
    • 具有钼分流层的磁阻型磁头
    • US5510941A
    • 1996-04-23
    • US227277
    • 1994-04-13
    • Tatsushi OhyamaMasahiro NakataNaoto Matono
    • Tatsushi OhyamaMasahiro NakataNaoto Matono
    • G11B5/39
    • G11B5/3932
    • A magneto-resistive head has an upper shield layer, a lower shield layer spaced a distance from the upper shield layer, a magneto-resistive layer disposed over the lower shield layer, a shunt layer disposed adjacent to the magneto-resistive layer for giving a magnetic bias field to the magneto-resistive layer, and a electrode layer in contact with the magneto-resistance device and the shunt layer for providing an electric current to both of the magneto-resistive layer and the shunt layer electric current. The magneto-resistive layer, the shunt layer and the electrode layer are disposed between the upper shield and the lower shield. The shunt layer consist of molybdenum having a grain size more than 150 angstrom. The shunt layer has low specific resistance. Therefore, the thickness of the shunt layer can be reduced. As a result, the distance between the upper and lower shield layer can be reduced. Consequently, the gap length of the magneto-resistive head is narrower than prior art magnetic heads.
    • 磁阻头具有上屏蔽层,与上屏蔽层隔开距离的下屏蔽层,设置在下屏蔽层上的磁阻层,邻近磁阻层设置的并联层,用于给予 磁偏置磁场和与磁阻装置和分流层接触的电极层,用于向磁阻层和分流层电流两者提供电流。 磁阻层,分流层和电极层设置在上屏蔽和下屏蔽之间。 并联层由粒径大于150埃的钼组成。 并联层具有低电阻率。 因此,可以减小并联层的厚度。 结果,可以减小上下屏蔽层之间的距离。 因此,磁阻头的间隙长度比现有技术的磁头窄。