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    • 2. 发明申请
    • FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT
    • 使用原子层沉积和高通量表面处理形成CIGS吸收层材料
    • WO2005081789A2
    • 2005-09-09
    • PCT/US2005/003748
    • 2005-02-07
    • NANOSOLAR, INC.SAGER, Brian, M.ROSCHEISEN, Martin, R.LEIDHOLM, Craig
    • SAGER, Brian, M.ROSCHEISEN, Martin, R.LEIDHOLM, Craig
    • An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
    • 可以使用原子层沉积反应在衬底上形成吸收层。 包含IB,IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成,以形成 一个电影。 然后将VIA族元素并入膜中并退火以形成吸收层。 吸收层可以大于约25nm厚。 衬底可以被卷绕成一个或多个线圈,使得线圈的相邻匝不彼此接触。 卷绕的基板可以放置在处理室中,其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。 可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。