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    • 1. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20110189618A1
    • 2011-08-04
    • US13062180
    • 2009-09-01
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
    • 抗蚀剂处理方法包括以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:具有酸不稳定基团的树脂(A),其在碱性水溶液中不溶或难溶,并且呈现 通过酸,光酸产生剂(B),交联剂(C)和酸放大器(D)的作用将其溶于碱水溶液中并干燥; (2)预烘第一抗蚀膜; (3)暴露于第一抗蚀膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)硬烘烤第一抗蚀剂图案,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。