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1. 发明授权

US5319441A Method and apparatus for detecting wavelength of laser beam 失效
标题翻译：用于检测激光束波长的方法和装置
公开(公告)号：US5319441A
公开(公告)日：1994-06-07
申请号：US114287
申请日：1993-09-01
申请人： Mitsugu Terada , Ken Ohmata , Michito Uehara , Hideaki Shibata , Yasuo Oeda , Yuichiro Terashi
发明人： Mitsugu Terada , Ken Ohmata , Michito Uehara , Hideaki Shibata , Yasuo Oeda , Yuichiro Terashi
IPC分类号： G01J3/26 , G01J9/02 , H01S3/00 , G01B9/02
CPC分类号： G01J9/0246 , G01J2003/265
摘要： A laser light, whose wavelength is to be measured, is introduced into an etalon, a concentric circular interference stripe derived from the etalon is irradiated onto a one-dimensional photodetector array and a diameter of the interference stripe is measured to measure the wavelength of the laser light. Alternatively, if a reference laser light of known wavelength is introduced into the etalon, as described above, a wavelength measurement of extremely high accuracy can be made without being affected by positional deviations of the optical system.
摘要翻译：将要测量其波长的激光引入标准具中，将衍生自标准具的同心圆形干涉条纹照射到一维光电检测器阵列上，并测量干涉条纹的直径以测量波长激光灯。或者，如果将已知波长的参考激光引入标准具，如上所述，可以在不受光学系统的位置偏差的影响的情况下进行极高精度的波长测量。

2. 发明授权

US5197078A Gas laser apparatus 失效
标题翻译：气体激光装置
公开(公告)号：US5197078A
公开(公告)日：1993-03-23
申请号：US708498
申请日：1991-05-31
申请人： Mitsugu Terada , Ken Ohmata , Michito Uehara , Hideaki Shibata , Yasuo Oeda , Yuichiro Terashi
发明人： Mitsugu Terada , Ken Ohmata , Michito Uehara , Hideaki Shibata , Yasuo Oeda , Yuichiro Terashi
IPC分类号： H01S3/034 , H01S3/036
CPC分类号： H01S3/036 , H01S3/034 , H01S3/0346
摘要： A gas laser apparatus having transparent laser windows provided on a laser chamber body, in which operating gases is sealed if necessary, comprising circulation means connected to the laser chamber body through an intake port and a discharge port for circulating gases within the laser chamber body and filtration means disposed in said circulation means, further comprising cutoff means for preventing the laser windows from being stained and open and closeably cutting off between the laser chamber body and the laser windows, and having a construction wherein in replacing the laser window, the cutoff means is once placed in a cutoff state, and the laser window is separated from the laser chamber body to place the laser window.

3. 发明授权

US5251226A Discharge exciting excimer laser device 失效
标题翻译：放电激发准分子激光器件
公开(公告)号：US5251226A
公开(公告)日：1993-10-05
申请号：US775937
申请日：1991-11-04
申请人： Shuntaro Watanabe , Yasuo Oeda , Ken Ohmata , Michito Uehara , Mitsugu Terada , Hideaki Shibata , Yuichiro Terashi
发明人： Shuntaro Watanabe , Yasuo Oeda , Ken Ohmata , Michito Uehara , Mitsugu Terada , Hideaki Shibata , Yuichiro Terashi
IPC分类号： H01S3/038 , H01S3/097
CPC分类号： H01S3/038
摘要： A discharge exciting excimer laser device comprises a pair of main discharge electrodes, a dielectric and an auxiliary electrode. The dielectric is in a cylindrical form and has a side opposed to one of the main discharge electrodes, which side is formed into a flat plate-like portion. The auxiliary electrode is embraced within the dielectric leaving a space and is opposed to one of the main discharge electrodes with the flat plate-like portion of the dielectric sandwiched therebetween. Such a construction increases laser output and improves insulating performance.

4. 发明授权

US5214659A Laser device 失效
标题翻译：激光装置
公开(公告)号：US5214659A
公开(公告)日：1993-05-25
申请号：US604634
申请日：1990-10-29
申请人： Mitsugu Terada , Ken Ohmata , Kazuo Shimazaki , Yasuo Oeda , Yuichiro Terashi
发明人： Mitsugu Terada , Ken Ohmata , Kazuo Shimazaki , Yasuo Oeda , Yuichiro Terashi
IPC分类号： H01S3/106 , H01S3/137 , H01S3/225
CPC分类号： H01S3/137 , H01S3/1062 , H01S3/225
摘要： Angles of inclination of the two wavelength selection elements arranged on an optical path of a laser beam source are varied to make a laser output variable. Light transmitting ranges of the two wavelength selection elements are coincided with each other so as to adjust the light wavelength bands, thereby the laser beam is narrowed without increasing its fineness.

5. 发明授权

US5170224A Laser wavelength measuring device 失效
标题翻译：激光波长测量装置
公开(公告)号：US5170224A
公开(公告)日：1992-12-08
申请号：US604635
申请日：1990-10-29
申请人： Mitsugu Terada , Ken Ohmata , Kazuo Shimazaki , Yasuo Oeda , Yuichiro Terashi
发明人： Mitsugu Terada , Ken Ohmata , Kazuo Shimazaki , Yasuo Oeda , Yuichiro Terashi
IPC分类号： G01J3/30 , G01J3/12 , G01J3/28 , G01J9/00 , H01S3/00
CPC分类号： G01J9/00 , G01J2003/1239 , G01J2003/1243 , G01J3/2803
摘要： This invention is provided with a wavelength selecting means for uses in selectively receiving beam in compliance with each of a reference beam and a measured beam in order to simplify a correction or comparison of oscillating wavelengths in the laser device and further to improve a reliability and a controlling responsive speed.

6. 发明申请

US20050105845A1 Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
标题翻译：半导体激光器件，半导体激光器模块和光纤放大器
公开(公告)号：US20050105845A1
公开(公告)日：2005-05-19
申请号：US11020320
申请日：2004-12-27
申请人： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
发明人： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
IPC分类号： H01S3/06 , G02B6/28 , H01S3/10 , H01S5/20 , H01S5/22 , H01S5/343
CPC分类号： H01S5/20 , H01S5/2004
摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.
摘要翻译：半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率。

7. 发明授权

US06175582B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06175582B1
公开(公告)日：2001-01-16
申请号：US09199435
申请日：1998-11-25
申请人： Yumi Naito , Yasuo Oeda , Tsuyoshi Fujimoto
发明人： Yumi Naito , Yasuo Oeda , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/3213 , H01S5/3432
摘要： Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.
摘要翻译：导光层分别形成在有源层的两个表面上，这些导光层的带隙宽于有源层，n型包覆层和p型覆层分别形成为夹层其间的有源层和导光层分别形成在该有源层与导光层之间的这些包层具有比导光层宽的带隙和载流子阻挡层的载流子阻挡层，间隙宽于有源层和光导层的宽度。 p型覆层的折射率比n型覆层的折射率低。通过这样的结构，内部损耗被限制在低水平，随着自由载流子吸收减小，并且半导体激光器件的电阻和热电阻降低，结果激光器件的效率和输出功率提高。

8. 发明授权

US06546032B1 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US06546032B1
公开(公告)日：2003-04-08
申请号：US09644080
申请日：2000-08-23
申请人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
发明人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/34313 , H01S5/34353
摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.
摘要翻译：在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

9. 发明授权

US6104741A Semiconductor laser light source and solid-state laser apparatus 失效
标题翻译：半导体激光光源和固态激光装置
公开(公告)号：US6104741A
公开(公告)日：2000-08-15
申请号：US49076
申请日：1998-03-27
申请人： Kouichi Igarashi , Yasuo Oeda , Kiyofumi Muro
发明人： Kouichi Igarashi , Yasuo Oeda , Kiyofumi Muro
IPC分类号： G02B6/42 , G02B27/10 , G02B27/42 , H01S3/00 , H01S5/00 , H01S5/40 , H01S3/091 , G02B6/00 , G02B6/32 , G02B6/34
CPC分类号： G02B27/12 , G02B19/0014 , G02B19/0057 , G02B27/123 , G02B6/425 , G02B6/4206 , H01S3/005 , H01S5/005 , H01S5/4031
摘要： A semiconductor laser light source includes: a semiconductor laser array which emits laser beams whose polarization planes are parallel to each other and whose divergent angles .theta.z and .theta.x in two orthogonal directions satisfy an inequality .theta.z>.theta.x; a cylindrical lens which converges the laser beams emitted from the semiconductor laser array in a direction that decreases the divergent angle .theta.z; a wave plate which controls the direction of polarization so that the polarization planes of the laser beams having passed through the cylindrical lens are at 90 degrees to each other; a birefringent optical element which merges by the birefringent effect the optical paths of the laser beams having passed through the wave plate; and a light emitting surface which converges the laser beams merged by the birefringent optical element in a direction that decreases the divergent angle .theta.x.Thus, the efficiency of merging the laser beams and the efficiency of joining the laser beams to the succeeding optical system can be greatly improved.
摘要翻译：半导体激光源包括：发射激光束的半导体激光器阵列，其偏振面彼此平行，并且其两个正交方向上的发散角θz和θx满足不等式θz>θx; 柱面透镜，其使从半导体激光器阵列发射的激光束沿减小发散角θz的方向会聚; 控制偏振方向的波片，使得通过柱面透镜的激光束的偏振面相互成90度; 双折射光学元件，其通过双折射效应合并已经通过波片的激光束的光路; 以及会聚由双折射光学元件合流的激光束沿着减小发散角θx的方向会聚的发光面。因此，可以大大提高合并激光束的效率和将激光束接合到后续光学系统的效率。

10. 发明授权

US07203215B2 Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
标题翻译：半导体激光器件，半导体激光器模块和光纤放大器
公开(公告)号：US07203215B2
公开(公告)日：2007-04-10
申请号：US11020320
申请日：2004-12-27
申请人： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
发明人： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01S5/2004
摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.
摘要翻译：半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率。

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