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US08541307B2 Treatment method for reducing particles in dual damascene silicon nitride process 有权
标题翻译：双镶嵌氮化硅工艺中还原颗粒的处理方法
公开(公告)号：US08541307B2
公开(公告)日：2013-09-24
申请号：US13339400
申请日：2011-12-29
申请人： Meimei Gu , Duoyuan Hou , Jun Xu , Ke Wang
发明人： Meimei Gu , Duoyuan Hou , Jun Xu , Ke Wang
IPC分类号： H01L21/44
CPC分类号： H01L21/76883 , H01L21/02074 , H01L21/0217 , H01L21/02301 , H01L21/02315 , H01L21/76834
摘要： A treatment method for reducing particles in a Dual Damascene Silicon Nitride (DDSN) process, including the following steps: forming a seed layer of copper on a silicon wafer; depositing a deposition layer of copper to cover the seed layer of copper; planarizing the deposition layer of copper; providing the silicon wafer into a reaction chamber and performing a pre-treatment on a surface of the deposition layer of copper using NH3 gas under a plasma condition so as to reduce copper oxide (CuO) to copper (Cu) formed on the deposition layer of copper; in the reaction chamber, generating an etching block layer on the deposition layer of copper using a DDSN deposition process; cleaning the reaction chamber using NF3 gas; and directing N2O gas into the reaction chamber and removing the remaining hydrogen (H) and fluorine (F) in the reaction chamber using the N2O gas under the plasma condition.
摘要翻译：一种用于减少双镶嵌氮化硅（DDSN）工艺中的颗粒的处理方法，包括以下步骤：在硅晶片上形成铜种子层; 沉积铜沉积层以覆盖铜的籽晶层; 平坦化铜的沉积层; 将硅晶片提供到反应室中，并且在等离子体条件下使用NH 3气体在铜的沉积层的表面上进行预处理，以将氧化铜（CuO）还原成形成在沉积层上的铜（Cu）铜; 在反应室中，使用DDSN沉积工艺在铜的沉积层上产生蚀刻阻挡层; 使用NF3气体清洗反应室; 并在等离子体条件下使用N2O气体将N 2 O气体引入反应室并除去反应室中剩余的氢（H）和氟（F）。

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