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1. 发明申请

US20050249975A1 Organic electronic device and methods for manufacturing a device of this kind 失效
标题翻译：有机电子装置及其制造方法
公开(公告)号：US20050249975A1
公开(公告)日：2005-11-10
申请号：US11088194
申请日：2005-03-24
申请人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gudesen , Goran Gustafsson , Linda Andersson
发明人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gudesen , Goran Gustafsson , Linda Andersson
IPC分类号： B32B19/00 , G11C11/22 , G11C13/02 , H01L20060101 , H01L33/00 , H01L51/10 , H01L51/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , H01L51/0025 , H01L51/0026 , H01L51/0034 , H01L51/0043 , H01L51/005
摘要： An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.
摘要翻译：有机电子器件由夹在电极之间的一种或多种电活性有机或聚合物材料组成。在这种装置中的关键是电极和聚合物之间的界面，其中可能产生对装置的正常功能有害的降解或化学反应产物。这通过引入由一种或多种由含有膦酸酯或磷酸酯官能团的分子骨架组成的材料构成的功能性夹层来解决，直接连接或通过侧链，所述功能层设置在至少一个相应的电极之间，更多的电活性材料在设备中。

2. 发明授权

US07265379B2 Organic electronic device and methods for manufacturing a device of this kind 失效
标题翻译：有机电子装置及其制造方法
公开(公告)号：US07265379B2
公开(公告)日：2007-09-04
申请号：US11088194
申请日：2005-03-24
申请人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gude Gudesen , Göran Gustafsson , Linda Andersson
发明人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gude Gudesen , Göran Gustafsson , Linda Andersson
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , H01L51/0025 , H01L51/0026 , H01L51/0034 , H01L51/0043 , H01L51/005
摘要： An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.
摘要翻译：有机电子器件由夹在电极之间的一种或多种电活性有机或聚合物材料组成。在这种装置中的关键是电极和聚合物之间的界面，其中可能产生对装置的正常功能有害的降解或化学反应产物。这通过引入由一种或多种由含有膦酸酯或磷酸酯官能团的分子骨架组成的材料构成的功能性夹层来解决，直接连接或通过侧链，所述功能层设置在至少一个相应的电极之间，更多的电活性材料在设备中。

3. 发明申请

US20060146589A1 Method for operating a passive matrix-addressable ferroelectric or electret memory device 失效
标题翻译：用于操作无源矩阵寻址铁电或驻极体存储器件的方法
公开(公告)号：US20060146589A1
公开(公告)日：2006-07-06
申请号：US11027977
申请日：2005-01-04
申请人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
发明人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
IPC分类号： G11C11/22
CPC分类号： G11C29/50 , G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有定义参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。

4. 发明申请

US20050073869A1 Method for operating a ferroelectric of electret memory device, and a device of this kind 有权
公开(公告)号：US20050073869A1
公开(公告)日：2005-04-07
申请号：US10659428
申请日：2003-09-11
申请人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
发明人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.

5. 发明授权

US06937500B2 Method for operating a ferroelectric of electret memory device, and a device of this kind 有权
标题翻译：操作驻极体存储装置的铁电体的方法以及这种装置
公开(公告)号：US06937500B2
公开(公告)日：2005-08-30
申请号：US10659428
申请日：2003-09-11
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Per Sandström , Mats Johansson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Per Sandström , Mats Johansson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.
摘要翻译：说明矩阵寻址铁电或驻极体存储器件及其操作方法。该方法包括当读取数据时在存储器中的第一和第二组电极上施加第一多个电压差，以及当刷新或重写数据时施加第二多个电压差。第一和第二多个电压差对应于包括电压脉冲的时间序列的电位电平集合。指示存储器单元响应的变化的至少一个参数用于确定电压脉冲的至少一个校正因子，从而相应地调整脉冲参数。存储器件包括用于确定至少一个参数的装置，与用于确定校正因子的装置连接的校准存储器以及用于调整应用于存储器件中的读和写操作的脉冲参数的控制电路。

6. 发明授权

US07215565B2 Method for operating a passive matrix-addressable ferroelectric or electret memory device 失效
标题翻译：用于操作无源矩阵寻址铁电或驻极体存储器件的方法
公开(公告)号：US07215565B2
公开(公告)日：2007-05-08
申请号：US11027977
申请日：2005-01-04
申请人： Christer Karlsson , Göran Gustafsson , Mats Johansson , Per Sandström , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson
发明人： Christer Karlsson , Göran Gustafsson , Mats Johansson , Per Sandström , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson
IPC分类号： G11C11/22
CPC分类号： G11C29/50 , G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有定义参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。

7. 发明授权

US06606261B2 Method for performing write and read operations in a passive matrix memory, and apparatus for performing the method 有权
标题翻译：在无源矩阵存储器中执行写入和读取操作的方法，以及用于执行该方法的装置
公开(公告)号：US06606261B2
公开(公告)日：2003-08-12
申请号：US09899094
申请日：2001-07-06
申请人： Hans Gude Gudesen , Per-Erik Nordal , Per Bröms , Mats Johansson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Per Bröms , Mats Johansson
IPC分类号： G11C1112
CPC分类号： G11C11/22
摘要： A method and apparatus for performing read and write operations in matrix-addressed memory array of memory cells is described. The memory cells comprising an electrically polarizable material exhibiting polarization remanence, in particular and electret or ferroelectric material, where a logical value stored in a memory cell is represented by an actual polarization state in the memory cell. The degree of polarization in the polarizable material is limited during each read and write cycle to a value defined by a circuit device controlling the read and write operations, with said value ranging from zero to an upper limit corresponding to saturation of the polarization and consistent with predetermined criterta for a reliable detection of a logic state of a memory cell.
摘要翻译：描述了一种在存储器单元的矩阵寻址存储器阵列中执行读和写操作的方法和装置。存储单元包括表现出极化剩磁的电可极化材料，特别是驻极体或铁电材料，其中存储在存储单元中的逻辑值由存储单元中的实际极化状态表示。在每个读取和写入周期期间，可极化材料中的极化程度被限制在由控制读取和写入操作的电路装置定义的值，所述值范围从零到上限，对应于极化饱和度，并与用于可靠地检测存储器单元的逻辑状态的预定标准。

8. 发明授权

US08852305B2 Nanolaminated coated cutting tool 有权
标题翻译：纳米层压涂层切割工具
公开(公告)号：US08852305B2
公开(公告)日：2014-10-07
申请号：US13375570
申请日：2010-05-28
申请人： Jon Andersson , Rachid M'Saoubi , Hindrik Engstrom , Mats Johansson
发明人： Jon Andersson , Rachid M'Saoubi , Hindrik Engstrom , Mats Johansson
IPC分类号： C23C14/00 , C04B41/52 , C04B41/00 , C04B41/89 , C23C14/06 , C23C28/00 , C23C30/00 , C23C28/04
CPC分类号： C04B41/52 , B23B2222/36 , B23B2224/24 , B23B2228/08 , B23B2228/10 , C04B41/009 , C04B41/89 , C23C14/0641 , C23C28/042 , C23C28/044 , C23C28/42 , C23C30/005 , Y10T29/49995 , Y10T407/27 , Y10T428/24975 , Y10T428/265 , C04B41/4529 , C04B41/5063 , C04B41/5068 , C04B41/5062 , C04B41/5066 , C04B35/00 , C04B35/5831
摘要： A cutting tool insert for machining by chip removal includes a body of a hard alloy of cemented carbide, cermet, ceramics, cubic boron nitride based material or high speed steel, onto which a hard and wear resistant coating is deposited by physical vapor deposition. The coating includes a polycrystalline nanolaminated structure of alternating layers A and B where layer A is (Ti,Al,Me1)N and Me1 is optionally one or more of the metal elements from group 3, 4, 5 or 6 in the periodic table, layer B is (Ti,Si,Me2)N and Me2 is optionally one or more of the metal elements from group 3, 4, 5 or 6 in the periodic table including Al with a thickness between 0.5 and 20 μm and method of making the same. This insert is particularly useful in metal cutting applications generating high temperatures with improved edge integrity, machining of super alloys, stainless and hardened steels.
摘要翻译：用于通过切屑去除加工的切削刀具刀片包括硬质合金，金属陶瓷，陶瓷，立方氮化硼基材料或高速钢的硬质合金的主体，通过物理气相沉积在其上沉积硬且耐磨的涂层。涂层包括交替层A和B的多晶Naminaminated结构，其中层A是（Ti，Al，Me1）N，Me1任选地是周期表中第3,4,5或6族中的一种或多种金属元素， B层是（Ti，Si，Me2）N，Me2任选地是周期表中的第3,4,5或6族中的一种或多种金属元素，包括厚度在0.5和20μm之间的Al，以及使相同。该插入件特别适用于金属切割应用，产生高温，改善边缘完整性，超合金，不锈钢和硬化钢的加工。

9. 发明授权

US08767363B2 Methods and arrangements including circuit breaking means in a power supply system 有权
标题翻译：包括电源系统中断路装置的方法和装置
公开(公告)号：US08767363B2
公开(公告)日：2014-07-01
申请号：US13516300
申请日：2009-12-18
申请人： Mats Johansson , Enar Sundell
发明人： Mats Johansson , Enar Sundell
IPC分类号： H02H3/00
CPC分类号： H02H3/087 , H02H3/081
摘要： Power modules and related methods are providing configured to supply power from a power source to a power consuming unit. The power module configured to disconnect power in the power module in case of excess currents through the circuit breakers.
摘要翻译：功率模块和相关方法被配置为从电源向功耗单元供电。电源模块配置为在通过断路器的电流过大的情况下断开电源模块中的电源。

10. 发明授权

US08722553B2 Woven airbag fabric 有权
标题翻译：编织气囊面料
公开(公告)号：US08722553B2
公开(公告)日：2014-05-13
申请号：US13127728
申请日：2009-11-06
申请人： Mats Johansson
发明人： Mats Johansson
IPC分类号： D03D11/00 , B60R21/235
CPC分类号： B60R21/235 , B60R2021/23509 , B60R2021/23542 , D03D1/02 , Y10T442/2008 , Y10T442/2139 , Y10T442/2893 , Y10T442/291 , Y10T442/2918 , Y10T442/322 , Y10T442/3228
摘要： A woven airbag fabric includes a first type of filament yarn, at least a second type of filament yarn and a silicone-based coating. The first type of filament yarn is chosen from the group of polyolefin filament yarns. The at least a second type of filament yarn is chosen from the group of polyamide and polyester filament yarns.
摘要翻译：编织气囊织物包括第一种类型的长丝纱线，至少第二种长丝纱线和硅酮基涂层。第一种长丝纱选自聚烯烃长丝纱线。至少第二种类型的长丝纱选自聚酰胺和聚酯长丝纱线组。

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