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    • 2. 发明授权
    • Display and fabricating method thereof
    • 其显示及制造方法
    • US06746888B2
    • 2004-06-08
    • US10259410
    • 2002-09-30
    • Makoto HashimotoHisashi KadotaHirohide FukumotoTakusei Sato
    • Makoto HashimotoHisashi KadotaHirohide FukumotoTakusei Sato
    • H01L2184
    • H01L29/78636G02F1/136209G02F1/136227H01L27/12H01L27/1248
    • A transmission type display includes a thin film transistor for driving a pixel electrode, which transistor is provided on a substrate, and a conductive shield layer provided at a position over the thin film transistor and under the pixel electrode. A first planarization film is formed to bury an irregular contour of the thin film transistor and the shield layer is disposed on the planarized surface of the first planarization film, and a second planarization film is formed to bury steps of the shield layer, and the pixel electrode is disposed on the planarized surface of the second planarization film. Since the transmission type display has the structure in which the conductive shield layer is put between the upper second planarization film and the lower first planarization film each of which is made from an insulating material, the shielding performance and the alignment characteristic of the display can be improved.
    • 透射型显示器包括用于驱动像素电极的薄膜晶体管,该晶体管设置在基板上,以及设置在薄膜晶体管的上方和像素电极下方的导电屏蔽层。 形成第一平坦化膜以埋入薄膜晶体管的不规则轮廓,并且屏蔽层设置在第一平坦化膜的平坦化表面上,并且形成第二平坦化膜以掩埋屏蔽层的步骤,并且像素 电极设置在第二平坦化膜的平坦化表面上。 由于透射型显示器具有导电屏蔽层放置在由绝缘材料制成的上部第二平坦化膜和下部第一平坦化膜之间的结构,所以显示器的屏蔽性能和取向特性可以是 改进。
    • 3. 发明授权
    • Thin film semiconductor device and liquid crystal display unit, and fabrication methods thereof
    • 薄膜半导体器件和液晶显示单元及其制造方法
    • US06587165B2
    • 2003-07-01
    • US09922137
    • 2001-08-03
    • Makoto HashimotoTakusei Sato
    • Makoto HashimotoTakusei Sato
    • G02F1136
    • G02F1/136209G02F1/136213G02F1/136227G02F1/136286G02F1/1368
    • A thin film semiconductor device includes pluralities of signal and gate interconnections crossing each other on an insulating substrate. Pixels are disposed at crossing points between the signal and gate interconnections. Each pixel has at least a pixel electrode, a thin film transistor for driving the pixel electrode, and a light shield band for shielding the thin film transistor from external light. A source of the thin film transistor is connected to the signal interconnection, a drain thereof is connected to the pixel electrode, and a gate electrode thereof is connected to the gate interconnection. The light shield band is formed of a first conductive layer, and at least part of the light shield band is used as the gate interconnection. The gate electrode is formed of a second conductive layer different from the first conductive layer. The first conductive layer used for the gate interconnection is electrically connected via a contact hole to the second conductive layer forming the gate electrode within each pixel region. A pixel opening ratio of the thin film semiconductor device used as a drive substrate for an active matrix type liquid crystal display unit is thus improved.
    • 薄膜半导体器件包括在绝缘衬底上彼此交叉的多个信号和栅极互连。 像素设置在信号和门互连之间的交叉点处。 每个像素具有至少一个像素电极,用于驱动像素电极的薄膜晶体管和用于屏蔽薄膜晶体管与外部光的遮光带。 薄膜晶体管的源极连接到信号互连,其漏极连接到像素电极,并且其栅电极连接到栅极互连。 遮光带由第一导电层形成,并且遮光带的至少一部分用作栅极互连。 栅电极由不同于第一导电层的第二导电层形成。 用于栅极互连的第一导电层经由接触孔电连接到在每个像素区域内形成栅电极的第二导电层。 因此,提高了用作有源矩阵型液晶显示单元的驱动基板的薄膜半导体器件的像素开口率。
    • 4. 发明授权
    • Display and fabricating method thereof
    • 其显示及制造方法
    • US06501096B1
    • 2002-12-31
    • US09698087
    • 2000-10-30
    • Makoto HashimotoHisashi KadotaHirohide FukumotoTakusei Sato
    • Makoto HashimotoHisashi KadotaHirohide FukumotoTakusei Sato
    • H01L2904
    • H01L29/78636G02F1/136209G02F1/136227H01L27/12H01L27/1248
    • A transmission type display includes a thin film transistor for driving a pixel electrode, which transistor is provided on a substrate, and a conductive shield layer provided at a position over the thin film transistor and under the pixel electrode. A first planarization film is formed to bury an irregular contour of the thin film transistor and the shield layer is disposed on the planarized surface of the first planarization film, and a second planarization film is formed to bury steps of the shield layer, and the pixel electrode is disposed on the planarized surface of the second planarization film. Since the transmission type display has the structure in which the conductive shield layer is put between the upper second planarization film and the lower first planarization film each of which is made from an insulating material, the shielding performance and the alignment characteristic of the display can be improved.
    • 透射型显示器包括用于驱动像素电极的薄膜晶体管,该晶体管设置在基板上,以及设置在薄膜晶体管的上方和像素电极下方的导电屏蔽层。 形成第一平坦化膜以埋入薄膜晶体管的不规则轮廓,并且屏蔽层设置在第一平坦化膜的平坦化表面上,并且形成第二平坦化膜以掩埋屏蔽层的步骤,并且像素 电极设置在第二平坦化膜的平坦化表面上。 由于透射型显示器具有导电屏蔽层放置在由绝缘材料制成的上部第二平坦化膜和下部第一平坦化膜之间的结构,所以显示器的屏蔽性能和取向特性可以是 改进。
    • 7. 发明授权
    • Transgenic mice for screening for inhibitors of protein aggregation and methods for making and using them
    • 用于筛选蛋白质聚集抑制剂的转基因小鼠及其制备和使用方法
    • US07795495B2
    • 2010-09-14
    • US11675607
    • 2007-02-15
    • Eliezer MasliahEdward RockensteinMakoto Hashimoto
    • Eliezer MasliahEdward RockensteinMakoto Hashimoto
    • A01K67/027A01K67/00G01N33/00
    • C12N15/8509A01K67/0275A01K67/0276A01K67/0278A01K2207/15A01K2217/00A01K2217/05A01K2217/075A01K2227/105A01K2267/0312A01K2267/0318A61K38/00A61K48/00C07K14/47C07K14/4711C12N2830/008
    • The methodologies of the present invention demonstrate that a critical balance between pro- and anti-amyloidogenic molecules exists that regulates amyloid formation and cell death in Alzheimer's disease and Parkinson's disease. β-Synuclein, the non-amyloidogenic homologue of α-synuclein, is a negative modulator of α-synuclein and Aβ aggregation, having neuroprotective properties against α-synuclein and Aβ neurotoxicity and that β-synuclein and therapeutic agents derived therefrom block amyloidogenesis and neurodegeneration in vivo. The method of the present invention establishes that β-synuclein blocks Aβ aggregation either by direct inhibition of Aβ amyloidogenesis or indirectly via either α-synuclein or its 35 a.a. NAC region, inferring neuroprotective characteristics within the effected cells. The generation of a transgenic mouse line and a cell system overexpressing α-synuclein characterizes the mechanisms by which β-synuclein blocks α-synuclein and Aβ aggregation and that this mechanism offers protection to the cell against amyloid formation as seen in the pathologies of Alzheimer's disease and Parkinson's disease.
    • 本发明的方法证明,存在调节淀粉样蛋白形成和阿尔茨海默病和帕金森病中的细胞死亡的促淀粉样变性分子和抗淀粉样蛋白形成分子之间的关键平衡。 α-突触核蛋白的非淀粉样变性同源物 - 突触核蛋白是α-突触核蛋白和A&bgr的负调节剂; 聚集,对α-突触核蛋白和A&bgr有神经保护作用; 神经毒性以及由此产生的结核分枝杆菌和其衍生的治疗剂在体内阻断淀粉样变性和神经变性。 本发明的方法确定了结核分裂素A和bgr; 通过直接抑制A&bgr的聚集; 淀粉样蛋白发生或间接通过α-突触核蛋白或其35 a.a. NAC区域,推断受影响细胞内的神经保护特征。 转基因小鼠系的产生和过表达α-突触核蛋白的细胞系统的特征在于这样的机制,其中β-突触核蛋白阻断α-突触核蛋白和A&bgr; 并且该机制为阿尔茨海默氏病和帕金森病的病理学中所观察到的针对淀粉样蛋白形成的细胞提供了保护。
    • 9. 发明授权
    • Method for screening for anti-amyloidogenic properties and method for treatment of neurodegenerative disease
    • 筛选抗淀粉样变性的方法和治疗神经变性疾病的方法
    • US07226746B1
    • 2007-06-05
    • US09806842
    • 1999-10-06
    • Eliezer MasliahMakoto HashimotoEdward Rockenstein
    • Eliezer MasliahMakoto HashimotoEdward Rockenstein
    • G01N33/53
    • G01N33/5058G01N2333/47G01N2500/00
    • In methods for screening treatments for, and treatment of, neurodegenerative diseases, aggregation in neurons of NACP/α-synuclein is measured and expression of a non-amyloidogenic protein is stimulated in order to reduce the level aggregration. For purposes of screening agents for treatment of neurodegenerative disease, oxidative stress in the neuronal cells is stimulated by introducing a mixture of metal-ions and hydrogen peroxide. Examples of appropriate metals include iron, aluminum, and copper. After introduction of the agent under evaluation for stimulation of expression of non-amyloidogenic protein, the effectiveness is measured by testing for a decrease in the level of aggregation of NACP/α-synuclein. In an exemplary embodiment, the non-amyloidogenic protein is β-synuclein. The aggregation of NACP/α-synuclein is dependent upon the concentration of metal ions in the neuronal cells. In addition, the presence of chelating agents appears to modulate the build-up of NACP/α-synuclein aggregates which are responsible for synaptic and neuronal dysfunction.
    • 在用于筛选神经变性疾病的治疗和治疗方法中,测量NACP /α-突触核蛋白的神经元中的聚集,并刺激非淀粉样蛋白生成蛋白的表达以降低水平聚集。 为了筛选用于治疗神经变性疾病的药剂,通过引入金属离子和过氧化氢的混合物刺激神经元细胞中的氧化应激。 合适金属的实例包括铁,铝和铜。 在引入用于刺激非淀粉样蛋白形成蛋白表达的试剂之后,通过测试NACP /α-突触核蛋白的聚集水平的降低来测量有效性。 在一个示例性实施方案中,非淀粉样蛋白生成蛋白是β-突触核蛋白。 NACP /α-突触核蛋白的聚集取决于神经元细胞中金属离子的浓度。 此外,螯合剂的存在似乎调节负责突触和神经元功能障碍的NACP /α-突触核蛋白聚集体的积聚。