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1. 发明公开

EP1115161A4 SEMICONDUCTOR PHOTODETECTOR 审中-公开
标题翻译：半导体光电检测器
公开(公告)号：EP1115161A4
公开(公告)日：2001-12-05
申请号：EP99943316
申请日：1999-09-13
申请人： MITSUBISHI CABLE IND LTD , NIPPON KOGAKU KK
发明人： TADATOMO KAZUYUKI , OKAGAWA HIROAKI , OHUCHI YOUICHIRO , KOTO MASAHIRO , HIRAMATSU KAZUMASA , HAMAMURA YUTAKA , SHIMIZU SUMITO
IPC分类号： H01L31/0224 , H01L31/0304 , H01L31/103 , H01L31/108 , H01L31/10 , H01L31/08 , H01L33/00
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/1035 , H01L31/108 , Y02E10/544
摘要： A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode (2) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface (1a), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface (1a). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer (1) is a first conductivity type i layer, and the aforementioned electrode (2) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer (1).

2. 发明公开

EP1378949A4 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： LICHTEMITTIERENDHALBLEITERBAUELEMENT
公开(公告)号：EP1378949A4
公开(公告)日：2006-03-22
申请号：EP02705381
申请日：2002-03-20
申请人： MITSUBISHI CABLE IND LTD
发明人： TADATOMO KAZUYUKI , OKAGAWA HIROAKI , OUCHI YOICHIRO , TSUNEKAWA TAKASHI
IPC分类号： H01L33/12 , H01L33/22 , H01L33/32 , H01L33/00
CPC分类号： H01L33/22 , H01L33/12 , H01L33/32
摘要： Projections and recesses (1a) are formed in a first layer (1), and a second layer (2) having an index of refraction different from that of the first layer (1) is formed while filling in the recesses (alternatively, a first crystal (10) is grown on a crystal layer (S) serving as the foundation of the growth to have an uneven surface, and a second crystal (20) having an index of refraction different from that of the first crystal is grown). After the uneven refractive index interface (1a(10a)) is thus formed, a device structure where a semiconductor crystal layers including a light-emitting layer (A) are formed thereon. As a result, the light generated in the light-emitting layer (A) and traveling horizontally is bent by the influence of the uneven refractive index interface and directed to the outside. If ultraviolet light is emitted by using InGaN as the material of the light-emitting layer, a quantum well structure is used, and AlGaN is eliminated by forming all the layers between the quantum well structure and a low-temperature buffer layer by using a GaN crystal as the material. The quantum well structure is preferably made up of a well layer of InGaN and a barrier layer of GaN. The thickness of the barrier layer preferably ranges from 6 to 30 nm.
摘要翻译：在第一层（1）中形成凸起和凹槽（1a），并在填充凹槽时形成具有与第一层（1）不同的折射率的第二层（2）（或者，第一层在作为生长基础的晶体层（S）上生长晶体（10）以具有不平坦表面，并且生长具有与第一晶体不同的折射率的第二晶体（20））。在这样形成不均匀折射率界面（1a（10a））之后，形成其上形成包括发光层（A）的半导体晶体层的器件结构。结果，在发光层（A）中产生并且水平行进的光在不均匀折射率界面的影响下弯曲并且被引导到外部。如果通过使用InGaN作为发光层的材料来发射紫外光，则使用量子阱结构，并且通过使用GaN来形成量子阱结构和低温缓冲层之间的所有层来消除AlGaN 水晶作为材料。量子阱结构优选由InGaN的阱层和GaN的势垒层构成。阻挡层的厚度优选在6至30nm的范围内。

3. 发明公开

EP1071143A4 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL 审中-公开
标题翻译：发光器件的GaN基与制造GaN晶体的方法
公开(公告)号：EP1071143A4
公开(公告)日：2004-06-30
申请号：EP98957169
申请日：1998-12-04
申请人： MITSUBISHI CABLE IND LTD
发明人： HIRAMATSU KAZUMASA , OKAGAWA HIROAKI , OUCHI YOICHIRO , MIYASHITA KEIJI , TADATOMO KAZUYUKI
IPC分类号： H01L33/10 , H01L33/14 , H01L33/32 , H01S5/20 , H01S5/323 , H01S3/18 , H01L21/20 , H01S5/183
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025 , H01S5/2077 , H01S5/32341 , H01S2304/12
摘要： A GaN-based light emitting device has a light emitting layer of GaN-based material whose composition is so specified that the material can emit ultraviolet radiation. The dislocation density of the light emitting layer is partly low. To lower the dislocation density the mask method is used. In a preferred mode, in a layer provided in the light emitting device and containing GaN-based crystals, AlyGa(1-y)N(0∫y≤1) is wholly used, and the number y of the composition is so determined that 'the energy Eg1 of light emitted from the light emitting layer'

4. 发明专利

DE69602141T2 未知
公开(公告)号：DE69602141T2
公开(公告)日：1999-10-21
申请号：DE69602141
申请日：1996-08-24
申请人： MITSUBISHI CABLE IND LTD
发明人： OHUCHI YOUICHIRO , OKAGAWA HIROAKI , WATABE SHINICHI , TADATOMO KAZUYUKI
IPC分类号： H01L33/32 , H01L33/00

5. 发明公开

EP1328014A4 SEMICONDUCTOR BASE MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL 有权
标题翻译：半导体基材料及其制备方法
公开(公告)号：EP1328014A4
公开(公告)日：2005-10-19
申请号：EP01965671
申请日：2001-09-17
申请人： MITSUBISHI CABLE IND LTD
发明人： OKAGAWA HIROAKI , TADATOMO KAZUYUKI , OUCHI YOICHIRO , TSUNEKAWA TAKASHI
IPC分类号： C30B25/02 , C30B25/18 , C30B29/38 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/22 , H01L33/32 , H01S5/323
CPC分类号： C30B29/403 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265
摘要： A semiconductor base material, comprising a substrate (1) having an irregular epitaxial growth surface shown in Fig. 1 (a), wherein, when the vapor phase epitaxial growth of GaN crystals is performed, the irregular surface suppresses a lateral growth and promotes a growth in C-axis direction so as to form a base surface allowing a facet surface to be formed thereon and, as shown in Fig. 1 (b), the crystals having the facet surface formed thereon grow on projected parts and also on recessed parts and, when the crystal growth is further performed, the films grown from the projected and recessed parts are connected to each other to eventually cover the irregular surface as shown in Fig. 1 (c) for flattening and, in this case, and area with low dislocation density is formed at the top parts of the projected parts having the facet surface formed thereon to increase the quality of the film.

6. 发明公开

EP1178523A4 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE 有权
标题翻译： GaN类半导体复合晶体生长方法和半导体衬底
公开(公告)号：EP1178523A4
公开(公告)日：2004-09-29
申请号：EP00909774
申请日：2000-03-21
申请人： MITSUBISHI CABLE IND LTD
发明人： OUCHI YOICHIRO , OKAGAWA HIROAKI , KOTO MASAHIRO , TADATOMO KAZUYUKI
IPC分类号： C30B25/02 , C30B25/18 , C30B29/38 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , C30B29/40
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02658 , H01L33/007 , H01L33/0075
摘要： The state of the surface of a substrate (11) or the surface of a GaN compound semiconductor film (12) formed on the substrate (11) is changed using an anti-surfactant material. The GaN compound semiconductor material is supplied in a vapor deposition. Dot structures made of the GaN compound semiconductor are formed on the semiconductor film (12) and the growth is continued until the dot structures come to unite with one another and the surface becomes flat. While cavities (21) are being formed above the anti-surfactant region, the dot structures are unitized. Dislocation lines (22) extending from the underlying layer are blocked by the cavities (21), and therefore the dislocation density at the surface of the epitaxial film is reduced. Thus the dislocation density of a GaN compound semiconductor crystal is reduced without using any mask material, and a high-quality epitaxial film is formed.

7. 发明专利

DE69616108D1 未知
公开(公告)号：DE69616108D1
公开(公告)日：2001-11-29
申请号：DE69616108
申请日：1996-02-14
申请人： MITSUBISHI CABLE IND LTD
发明人： OKAGAWA HIROAKI , HASHIMOTO TAKAYUKI , MIYASHITA KEIJI , YAMADA TOMOO , TADATOMO KAZUYUKI
IPC分类号： H01L33/14 , H01L33/30 , H01L33/40 , H01L33/00
摘要： In the light emitting element comprising an n-type semiconductor substrate, a lower electrode formed on the lower surface of the substrate, and a light emitting part having a pn junction, which is composed of an InGaAlP compound semiconductor material, a p-type current diffusing layer and an upper electrode which are laminated on the upper surface of the substrate in that order from the substrate side, the improvement wherein a carrier concentration of the current diffusing layer is lower on a light emitting part side thereof than that on an upper electrode side thereof, and at least the upper electrode side of the current diffusing layer is composed of GaP. By employing such structure, diffusion of the dopant to a light emitting part can be suppressed even when the carrier concentration of the upper part of the current diffusing layer is set to be higher, thereby affording a lower resistance of the current diffusing layer as a whole. The GaP being a compound semiconductor without Al, the amount of the dopant necesssary for affording the superior effects of suppressing the diffusion of the dopant to the light emitting part can be less. Consequently, the luminous efficiency can be improved as compared with conventional ones, and a light emitting element having a long service life and superior reliability can be obtained.

8. 发明专利

GB2270199A Semiconductor light emitting diode 未知
公开(公告)号：GB2270199A
公开(公告)日：1994-03-02
申请号：GB9317480
申请日：1993-08-23
申请人： MITSUBISHI CABLE IND LTD
发明人： WATABE SHINICHI , TADATOMO KAZUYUKI , OKAGAWA HIROAKI
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/30 , H01L33/38 , H01L33/40
摘要： The light emitting diode comprises a semiconductor substrate 1 having a lower electrode 7, a pn junction X, a first light reflecting layer 2 disposed between the substrate and the pn junction, an upper electrode 6, and a second light reflecting layer 8 disposed between the pn junction and the upper electrode, the second light reflecting layer reflecting the light directed toward the upper electrode. Between the pn junction and the second light reflecting layer, a semiconductor layer having a wider bandgap than that of the active layer 4 may be provided. The diode is advantageous in that light absorption in the upper electrode is inhibited by the second light reflecting layer.

9. 发明公开

EP1184897A4 SEMICONDUCTOR BASE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR CRYSTAL MANUFACTURING METHOD 有权
标题翻译：半导体BASIS，生产方法和半导体生产结晶体的方法
公开(公告)号：EP1184897A4
公开(公告)日：2003-07-30
申请号：EP00909660
申请日：2000-03-15
申请人： MITSUBISHI CABLE IND LTD
发明人： TADATOMO KAZUYUKI , OKAGAWA HIROAKI , OUCHI YOICHIRO , KOTO MASAHIRO
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/0265 , H01L33/007
摘要： The growth surface of a substrate (1) is processed to have projections and recesses. The bottoms of the recesses may be covered with a mask. When a crystal is grown by vapor deposition by using this substrate, the material gas does not enter sufficiently into the recesses (12), and the crystal growth occurs only from the tops of the projections (11). As shown in Figure 1(b), crystal units (20) are produced at the initial stage of the crystal growth. As the crystal growth progresses, the crystal units grow laterally from the tops of the projections (11) and join one another to form a film. In due course, a crystal layer (2) covering the projections and recesses of the substrate (1) is formed leaving cavities (13) of the recesses, as shown in Figure 1(c). Thus a semiconductor substrate of the invention is produced. A low-dislocation region is formed at the portions grown laterally, that is, at the upper parts of the recesses (12), and the produced crystal layer has a high quality. A method of producing a semiconductor crystal comprises separating a semiconductor base into a substrate (1) and a crystal layer (2) at its cavity portion.

10. 发明专利

DE60033800T2 未知
公开(公告)号：DE60033800T2
公开(公告)日：2007-11-15
申请号：DE60033800
申请日：2000-03-21
申请人： MITSUBISHI CABLE IND LTD
发明人： OKAGAWA HIROAKI , KOTO MASAHIRO , TADATOMO KAZUYUKI
IPC分类号： H01L21/205 , C30B25/02 , C30B25/18 , C30B29/38 , C30B29/40 , H01L21/20 , H01L33/00 , H01L33/32 , H01S5/323
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.

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