专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06967872B2 Method and system for programming and inhibiting multi-level, non-volatile memory cells 有权
标题翻译：用于编程和禁止多级，非易失性存储单元的方法和系统
公开(公告)号：US06967872B2
公开(公告)日：2005-11-22
申请号：US10025749
申请日：2001-12-18
申请人： Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
发明人： Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
IPC分类号： G11C16/02 , G11C11/56 , G11C16/04
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/3486
摘要： A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
摘要翻译：提供了一种多级非易失性存储单元编程/锁定方法和系统。编程/锁定方法和系统有利地防止比其他存储器单元更快地充电的存储器单元被过度编程。

2. 发明授权

US06944068B2 Method and system for programming and inhibiting multi-level, non-volatile memory cells 有权
公开(公告)号：US06944068B2
公开(公告)日：2005-09-13
申请号：US10809571
申请日：2004-03-24
申请人： Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
发明人： Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
IPC分类号： G11C16/02 , G11C11/56 , G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/3486
摘要： A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.

3. 发明授权

US07095654B2 Method and system for programming and inhibiting multi-level, non-volatile memory cells 有权
公开(公告)号：US07095654B2
公开(公告)日：2006-08-22
申请号：US11223709
申请日：2005-09-09
申请人： Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
发明人： Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/3486
摘要： A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.

4. 发明授权

US06542407B1 Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells 有权
标题翻译：从与相邻存储器单元的场耦合影响的存储器单元中恢复数据的技术
公开(公告)号：US06542407B1
公开(公告)日：2003-04-01
申请号：US10052759
申请日：2002-01-18
申请人： Jian Chen , Long C. Pham , Alexander K. Mak
发明人： Jian Chen , Long C. Pham , Alexander K. Mak
IPC分类号： G11C1600
CPC分类号： G11C16/3431 , G11C11/5621 , G11C11/5642 , G11C16/3418
摘要： Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
摘要翻译：作为随后对相邻行的存储器单元进行编程的结果克服存储在一行存储器单元中的表观电荷水平的劣化的技术。在随后编程的行的数据存储在其他地方之后，其单元的电荷电平被驱动到公共电平。然后，第一行单元的电荷电平具有来自第二行的电荷水平的均匀影响，结果，成功读取存储在第一行中的数据的机会显着增加。

5. 发明授权

US07102924B2 Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells 有权
公开(公告)号：US07102924B2
公开(公告)日：2006-09-05
申请号：US11028906
申请日：2005-01-03
申请人： Jian Chen , Long C. Pham , Alexander K. Mak
发明人： Jian Chen , Long C. Pham , Alexander K. Mak
IPC分类号： G11C16/34
CPC分类号： G11C16/3431 , G11C11/5621 , G11C11/5642 , G11C16/3418
摘要： Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

6. 发明授权

US06847553B2 Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells 有权
标题翻译：从与相邻存储器单元的场耦合影响的存储器单元中恢复数据的技术
公开(公告)号：US06847553B2
公开(公告)日：2005-01-25
申请号：US10357840
申请日：2003-02-03
申请人： Jian Chen , Long C. Pham , Alexander K. Mak
发明人： Jian Chen , Long C. Pham , Alexander K. Mak
IPC分类号： G11C16/02 , G11C11/56 , G11C16/04 , G11C16/06 , G11C16/34 , G11C29/42 , G11C16/00
CPC分类号： G11C16/3431 , G11C11/5621 , G11C11/5642 , G11C16/3418
摘要： Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
摘要翻译：作为随后对相邻行的存储器单元进行编程的结果克服存储在一行存储器单元中的表观电荷水平的劣化的技术。在随后编程的行的数据存储在其他地方之后，其单元的电荷电平被驱动到公共电平。然后，第一行单元的电荷电平具有来自第二行的电荷水平的均匀影响，结果，成功读取存储在第一行中的数据的机会显着增加。

7. 发明授权

US07110298B2 Non-volatile system with program time control 有权
标题翻译：具有程序时间控制的非易失性系统
公开(公告)号：US07110298B2
公开(公告)日：2006-09-19
申请号：US10896096
申请日：2004-07-20
申请人： Farookh Moogat , Yan Li , Alexander K. Mak
发明人： Farookh Moogat , Yan Li , Alexander K. Mak
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C16/30
摘要： In a non-volatile memory system, when it is discovered that the voltage pump pulse provided by a charge pump for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.
摘要翻译：在非易失性存储器系统中，当发现由用于编程存储器单元的电荷泵提供的电压泵浦脉冲与参考电压不匹配时，电压泵浦脉冲的编程时间周期被调整为保持的值基本上没有变化，直到编程周期结束。以这种方式，编程脉冲的有效编程时间段的波动在编程周期的其余部分被阻止，使得阈值电压分布的加宽不会发生或将被减少。该特征允许为编程脉冲指定短的编程时间段以提高性能，同时允许当电荷泵在导致其缓慢和/或弱的条件下运行时增加编程时间段的灵活性。

8. 发明授权

US07262998B2 Non-volatile system with program time control 有权
标题翻译：具有程序时间控制的非易失性系统
公开(公告)号：US07262998B2
公开(公告)日：2007-08-28
申请号：US11462920
申请日：2006-08-07
申请人： Farookh Moogat , Yan Li , Alexander K. Mak
发明人： Farookh Moogat , Yan Li , Alexander K. Mak
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C16/30
摘要： In a non-volatile memory system, when it is discovered that the voltage pump pulse provided by a charge pump for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.
摘要翻译：在非易失性存储器系统中，当发现由用于编程存储器单元的电荷泵提供的电压泵浦脉冲与参考电压不匹配时，电压泵浦脉冲的编程时间周期被调整为保持的值基本上没有变化，直到编程周期结束。以这种方式，编程脉冲的有效编程时间段的波动在编程周期的其余部分被阻止，使得阈值电压分布的加宽不会发生或将被减少。该特征允许为编程脉冲指定短的编程时间段以提高性能，同时允许当电荷泵在导致其缓慢和/或弱的条件下运行时增加编程时间段的灵活性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式