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1. 发明授权

US06624579B2 Magnetron drive power supply 失效
公开(公告)号：US06624579B2
公开(公告)日：2003-09-23
申请号：US10130222
申请日：2002-05-15
申请人： Kenji Yasui , Takeshi Kitaizumi , Yoshiaki Ishio , Hideki Omori , Kazuho Sakamoto , Makoto Mihara , Haruo Suenaga , Hideaki Moriya , Emiko Ishizaki , Hisashi Morikawa
发明人： Kenji Yasui , Takeshi Kitaizumi , Yoshiaki Ishio , Hideki Omori , Kazuho Sakamoto , Makoto Mihara , Haruo Suenaga , Hideaki Moriya , Emiko Ishizaki , Hisashi Morikawa
IPC分类号： H01J2550
CPC分类号： H05B6/685 , Y02B40/143
摘要： It is provided a magnetron drive power supply wherein a series connection body of first and second semiconductor switch elements that can be brought into reverse conduction and a series connection body of first and second diodes are connected in parallel, first and second capacitors are connected in parallel to the first and second diodes, a series circuit of a commercial power supply and a primary winding of a high-voltage transformer is connected between a connection point of the first and second semiconductor switch elements that can be brought into reverse conduction and a connection point of the first and second diodes, and output of a secondary winding of the high-voltage transformer energizes a magnetron through a high-voltage rectification circuit.

2. 发明授权

US07414228B2 High frequency heating apparatus 有权
标题翻译：高频加热装置
公开(公告)号：US07414228B2
公开(公告)日：2008-08-19
申请号：US10550576
申请日：2004-04-09
申请人： Haruo Suenaga , Hideaki Moriya , Hisashi Morikawa , Shinichi Sakai , Makoto Mihara , Nobuo Shirokawa , Toyotsubu Matsukura , Masato Matsuda
发明人： Haruo Suenaga , Hideaki Moriya , Hisashi Morikawa , Shinichi Sakai , Makoto Mihara , Nobuo Shirokawa , Toyotsubu Matsukura , Masato Matsuda
IPC分类号： H05B6/68
CPC分类号： H05B6/666 , H01L2924/0002 , H05K1/18 , H05K2201/10363 , H01L2924/00
摘要： There is constructed a constitution such that a shunt resistor 30 is interposed in series with a portion capable of measuring an output current of a unidirectional power source portion 1 of a high frequency heating apparatus and a voltage generated at the shunt resistor 30 is outputted by a buffer 31. Further, an operational amplifier 3101 having a high input impedance is used for the buffer 31. Further, a diode bridge 101 and a semiconductor switching element 205 are fixed to a common heat radiating plate 33, the heat radiating plate 33 is formed with a notched portion 33a to thereby ensure insulating distances to the diode bridge 101 and the semiconductor switching element 205, and the shunt resistor 30 is arranged on a straight line the same as that between the diode bridge 101 and the semiconductor switching element 205.
摘要翻译：构成为使得分流电阻器30与能够测量高频加热装置的单向电源部分1的输出电流的部分串联插入并且在分流电阻器30上产生的电压被输出的结构缓冲区31。此外，缓冲器31使用具有高输入阻抗的运算放大器3101。此外，二极管电桥101和半导体开关元件205固定到公共散热板33上，散热板33形成有切口部分33a，从而确保到二极管电桥101和半导体开关元件的绝缘距离 205，并且分流电阻器30布置在与二极管电桥101和半导体开关元件205之间的直线相同的直线上。

3. 发明申请

US20060226141A1 High frequency heating apparatus 有权
标题翻译：高频加热装置
公开(公告)号：US20060226141A1
公开(公告)日：2006-10-12
申请号：US10550576
申请日：2004-04-09
申请人： Haruo Suenaga , Hideaki Moriya , Hisashi Morikawa , Shinichi Sakai , Makoto Mihara , Nobuo Shirokawa , Toyotsugu Matsukura , Masato Matsuda
发明人： Haruo Suenaga , Hideaki Moriya , Hisashi Morikawa , Shinichi Sakai , Makoto Mihara , Nobuo Shirokawa , Toyotsugu Matsukura , Masato Matsuda
IPC分类号： H05B1/02
CPC分类号： H05B6/666 , H01L2924/0002 , H05K1/18 , H05K2201/10363 , H01L2924/00
摘要： There is constructed a constitution such that a shunt resistor 30 is interposed in series with a portion capable of measuring an output current of a unidirectional power source portion 1 of a high frequency heating apparatus and a voltage generated at the shunt resistor 30 is outputted by a buffer 31. Further, an operational amplifier 3101 having a high input impedance is used for the buffer 31. Further, a diode bridge 101 and a semiconductor switching element 205 are fixed to a common heat radiating plate 33, the heat radiating plate 33 is formed with a notched portion 33a to thereby ensure insulating distances to the diode bridge 101 and the semiconductor switching element 205, and the shunt resistor 30 is arranged on a straight line the same as that between the diode bridge 101 and the semiconductor switching element 205.
摘要翻译：构成为使得分流电阻器30与能够测量高频加热装置的单向电源部分1的输出电流的部分串联插入并且在分流电阻器30上产生的电压被输出的结构缓冲区31。此外，缓冲器31使用具有高输入阻抗的运算放大器3101。此外，二极管电桥101和半导体开关元件205固定到公共散热板33，散热板33形成有切口部分33a，从而确保到二极管电桥101和半导体开关元件205的绝缘距离并且分流电阻器30布置在与二极管电桥101和半导体开关元件205之间的直线相同的直线上。

4. 发明授权

US07282682B2 High-frequency heating apparatus 有权
标题翻译：高频加热装置
公开(公告)号：US07282682B2
公开(公告)日：2007-10-16
申请号：US10599670
申请日：2005-04-26
申请人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Nobuo Shirokawa , Manabu Kinoshita
发明人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Nobuo Shirokawa , Manabu Kinoshita
IPC分类号： H05B6/68 , H02M3/337
CPC分类号： H05B6/666
摘要： A purpose of the present invention is to provide an inverter circuit capable of firmly turning ON IGBTs under limited condition, while a heat loss and noise can be hardly produced in semiconductor switching elements.In a resonant type high frequency heating apparatus which is arranged by employing a DC power supply; a series connection circuit constructed of two semiconductor switching elements which are connected to the DC power supply; another series connection circuit constituted by a capacitor and a primary winding of a leakage transformer connected to both the terminals of one of the two semiconductor switching elements; and a driving means for driving the respective semiconductor switching elements respectively, a variable dead time forming circuit is provided in the driving means, while the variable dead time forming circuit makes a dead time constant at a switching frequency lower than, or equal to a predetermined switching frequency, and also, rapidly increases a dead time at a switching frequency higher than, or equal to the predetermined switching frequency. Furthermore, when the switching frequency becomes high, a limitation is provided by which the dead time is not further widened.
摘要翻译：本发明的目的是提供一种能够在有限的条件下牢固地接通IGBT的逆变器电路，而在半导体开关元件中几乎不产生热损失和噪声。在通过采用直流电源配置的共振型高频加热装置中，连接到所述直流电源的两个半导体开关元件构成的串联连接电路; 由电容器和连接到两个半导体开关元件之一的两端的漏电变压器的初级绕组构成的另一个串联电路; 以及用于分别驱动各个半导体开关元件的驱动装置，在驱动装置中设置可变死区时间形成电路，而可变死区形成电路使开关频率的死区时间常数低于或等于预定值开关频率，并且在高于或等于预定开关频率的开关频率下快速增加死区时间。此外，当开关频率变高时，提供了不再延长死区时间的限制。

5. 发明申请

US20090001073A1 High-Frequency Heating Apparatus 有权
标题翻译：高频加热装置
公开(公告)号：US20090001073A1
公开(公告)日：2009-01-01
申请号：US10571846
申请日：2004-10-15
申请人： Hideaki Moriya , Haruo Suenaga , Hisashi Morikawa , Shinichi Sakai , Toyotsugu Matsukura , Nobuo Shirokawa
发明人： Hideaki Moriya , Haruo Suenaga , Hisashi Morikawa , Shinichi Sakai , Toyotsugu Matsukura , Nobuo Shirokawa
IPC分类号： H05B6/68
CPC分类号： H05B6/681 , Y02B40/143
摘要： A resonance type high frequency heating apparatus comprising; a direct current power supply; a series connection circuit consisting of a pair of semiconductor switching elements connected in parallel to the direct current power supply; another series connection circuit having a primary coil of a leakage transformer and a capacitor connected to both ends of one of the pair of semiconductor switching elements; and a drive means for driving each of the pair of semiconductor switching elements; wherein a variable dead time preparation circuit is provided in the drive means, and the variable dead time preparation circuit enables dead time to remain constant at below a predetermined frequency and causes the dead time to increase sharply at a point above a predetermined frequency.
摘要翻译：一种共振型高频加热装置，包括：直流电源; 串联连接电路，由与直流电源并联连接的一对半导体开关元件构成; 另一个串联连接电路，其具有泄漏变压器的初级线圈和连接到该对半导体开关元件之一的两端的电容器; 以及用于驱动所述一对半导体开关元件中的每一个的驱动装置; 其中在所述驱动装置中设置可变死区时间准备电路，并且所述可变死区时间准备电路使得死区时间在低于预定频率下保持恒定，并且使得所述死区时间在高于预定频率的点处急剧增加。

6. 发明申请

US20070195561A1 High-frequency heating device 有权
标题翻译：高频加热装置
公开(公告)号：US20070195561A1
公开(公告)日：2007-08-23
申请号：US10599431
申请日：2005-04-04
申请人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Toyotsugu Matsukura , Nobuo Shirokawa
发明人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Toyotsugu Matsukura , Nobuo Shirokawa
IPC分类号： H02M3/335
CPC分类号： H05B6/681 , H05B6/685 , Y02B40/143
摘要： An object of the present invention is to provide an inverter circuit in which soft start can be implemented by a simple circuit added thereto. In high-frequency heating apparatus for driving a magnetron, a DC power supply is chopped by two semiconductor switching devices, and this is output as an AC current through a resonance circuit. The high-frequency heating apparatus includes a dead time generation circuit for turning off the semiconductor switching devices concurrently. In the high-frequency heating apparatus, a drive unit for driving the aforementioned semiconductor switching devices has a function of limiting the lowest frequency of a frequency with which the semiconductor switching devices are driven. The aforementioned lowest frequency is set to be high at the beginning of operation of the high-frequency heating apparatus, and the aforementioned lowest frequency is set to be lower gradually thereafter.
摘要翻译：本发明的目的是提供一种逆变器电路，其中可以通过添加到其中的简单电路来实现软启动。在用于驱动磁控管的高频加热装置中，由两个半导体开关器件将直流电源切断，并通过谐振电路作为交流电流输出。高频加热装置包括用于同时关闭半导体开关装置的死区时间产生电路。在高频加热装置中，用于驱动上述半导体开关器件的驱动单元具有限制驱动半导体开关器件的频率的最低频率的功能。在高频加热装置的运转开始时，将上述最低频率设定得较高，之后将上述最低频率逐渐降低。

7. 发明授权

US09357591B2 High-frequency heating apparatus 有权
标题翻译：高频加热装置
公开(公告)号：US09357591B2
公开(公告)日：2016-05-31
申请号：US10571846
申请日：2004-10-15
申请人： Hideaki Moriya , Haruo Suenaga , Hisashi Morikawa , Shinichi Sakai , Toyotsugu Matsukura , Nobuo Shirokawa
发明人： Hideaki Moriya , Haruo Suenaga , Hisashi Morikawa , Shinichi Sakai , Toyotsugu Matsukura , Nobuo Shirokawa
IPC分类号： H05B6/68
CPC分类号： H05B6/681 , Y02B40/143
摘要： A resonance type high frequency heating apparatus comprising; a direct current power supply; a series connection circuit consisting of a pair of semiconductor switching elements connected in parallel to the direct current power supply; another series connection circuit having a primary coil of a leakage transformer and a capacitor connected to both ends of one of the pair of semiconductor switching elements; and a drive means for driving each of the pair of semiconductor switching elements; wherein a variable dead time preparation circuit is provided in the drive means, and the variable dead time preparation circuit enables dead time to remain constant at below a predetermined frequency and causes the dead time to increase sharply at a point above a predetermined frequency.
摘要翻译：一种共振型高频加热装置，包括：直流电源; 串联连接电路，由与直流电源并联连接的一对半导体开关元件构成; 另一个串联连接电路，其具有泄漏变压器的初级线圈和连接到该对半导体开关元件之一的两端的电容器; 以及用于驱动所述一对半导体开关元件中的每一个的驱动装置; 其中在所述驱动装置中设置可变死区时间准备电路，并且所述可变死区时间准备电路使得死区时间在低于预定频率下保持恒定，并且使得所述死区时间在高于预定频率的点处急剧增加。

8. 发明授权

US08217323B2 High-frequency heating device 有权
标题翻译：高频加热装置
公开(公告)号：US08217323B2
公开(公告)日：2012-07-10
申请号：US10599431
申请日：2005-04-04
申请人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Toyotsugu Matsukura , Nobuo Shirokawa
发明人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Toyotsugu Matsukura , Nobuo Shirokawa
IPC分类号： H05B6/66
CPC分类号： H05B6/681 , H05B6/685 , Y02B40/143
摘要： An object of the present invention is to provide an inverter circuit in which soft start can be implemented by a simple circuit added thereto. In high-frequency heating apparatus for driving a magnetron, a DC power supply is chopped by two semiconductor switching devices, and this is output as an AC current through a resonance circuit. The high-frequency heating apparatus includes a dead time generation circuit for turning off the semiconductor switching devices concurrently. In the high-frequency heating apparatus, a drive unit for driving the aforementioned semiconductor switching devices has a function of limiting the lowest frequency of a frequency with which the semiconductor switching devices are driven. The aforementioned lowest frequency is set to be high at the beginning of operation of the high-frequency heating apparatus, and the aforementioned lowest frequency is set to be lower gradually thereafter.
摘要翻译：本发明的目的是提供一种逆变器电路，其中可以通过添加到其中的简单电路来实现软启动。在用于驱动磁控管的高频加热装置中，由两个半导体开关器件将直流电源切断，并通过谐振电路作为交流电流输出。高频加热装置包括用于同时关闭半导体开关装置的死区时间产生电路。在高频加热装置中，用于驱动上述半导体开关器件的驱动单元具有限制驱动半导体开关器件的频率的最低频率的功能。在高频加热装置的运转开始时，将上述最低频率设定得较高，之后将上述最低频率逐渐降低。

9. 发明授权

US08017893B2 High-frequency heating apparatus 有权
标题翻译：高频加热装置
公开(公告)号：US08017893B2
公开(公告)日：2011-09-13
申请号：US10599961
申请日：2005-04-22
申请人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Toyotsugu Matsukura , Nobuo Shirokawa
发明人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Toyotsugu Matsukura , Nobuo Shirokawa
IPC分类号： H05B6/64
CPC分类号： H05B6/666 , H02M3/33569
摘要： A purpose of the present invention is to provide an inverter circuit capable of suppressing an overshooting phenomenon of an input current at an instantaneous time when an initiating operation of the inverter circuit is switched to the normal operation thereof, and thus, capable of preventing damages of IGBTs and a magnetron.In a high frequency heating apparatus comprising: a control signal forming circuit for forming a control signal from a difference between an input current of an AC power supply and a reference current; a frequency modulated signal forming circuit for correcting rectified voltage/rectified current which are obtained by rectifying the AC voltage/current of the AC power supply based upon the control signal of the control signal forming circuit; and a dead time forming circuit for receiving the output of the frequency modulated signal forming circuit, a control signal converting circuit having a function capable of further lowering the value of the control signal is provided between the control signal forming circuit and the frequency modulated signal forming circuit.
摘要翻译：本发明的目的是提供一种逆变器电路，其能够在将逆变器电路的启动操作切换到其正常操作的瞬时时抑制输入电流的过冲现象，从而能够防止损坏 IGBT和磁控管。一种高频加热装置，包括：控制信号形成电路，用于根据交流电源的输入电流与参考电流之间的差异形成控制信号; 基于所述控制信号形成电路的控制信号，对所述交流电源的交流电压/电流进行整流而得到的整流电压/整流电流的频率调制信号形成电路; 以及用于接收频率调制信号形成电路的输出的死区时间形成电路，具有能够进一步降低控制信号的值的控制信号转换电路被提供在控制信号形成电路和调制信号形成之间电路。

10. 发明申请

US20070175890A1 High-frequency heating apparatus 有权
公开(公告)号：US20070175890A1
公开(公告)日：2007-08-02
申请号：US10599670
申请日：2005-04-26
申请人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Nobuo Shirokawa , Manabu Kinoshita
发明人： Haruo Suenaga , Hideaki Moriya , Shinichi Sakai , Hisashi Morikawa , Nobuo Shirokawa , Manabu Kinoshita
IPC分类号： H05B6/68
CPC分类号： H05B6/666
摘要： A purpose of the present invention is to provide an inverter circuit capable of firmly turning ON IGBTs under limited condition, while a heat loss and noise can be hardly produced in semiconductor switching elements. In a resonant type high frequency heating apparatus which is arranged by employing a DC power supply; a series connection circuit constructed of two semiconductor switching elements which are connected to the DC power supply; another series connection circuit constituted by a capacitor and a primary winding of a leakage transformer connected to both the terminals of one of the two semiconductor switching elements; and a driving means for driving the respective semiconductor switching elements respectively, a variable dead time forming circuit is provided in the driving means, while the variable dead time forming circuit makes a dead time constant at a switching frequency lower than, or equal to a predetermined switching frequency, and also, rapidly increases a dead time at a switching frequency higher than, or equal to the predetermined switching frequency. Furthermore, when the switching frequency becomes high, a limitation is provided by which the dead time is not further widened.

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