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1. 发明授权

US07638002B2 Multi-tray film precursor evaporation system and thin film deposition system incorporating same 有权
标题翻译：多托盘膜前体蒸发系统和包含其的薄膜沉积系统
公开(公告)号：US07638002B2
公开(公告)日：2009-12-29
申请号：US10998420
申请日：2004-11-29
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa
IPC分类号： C23C16/00 , B01D7/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.
摘要翻译：描述了与高电导蒸气输送系统耦合的高电导多托盘固体前驱物蒸发系统，以通过增加固体前体的暴露表面积来提高沉积速率。多托盘固体前体蒸发系统包括具有一个或多个上托盘的基托。每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

2. 发明授权

US07488512B2 Method for preparing solid precursor tray for use in solid precursor evaporation system 有权
标题翻译：制备用于固体前驱物蒸发系统的固体前体托盘的方法
公开(公告)号：US07488512B2
公开(公告)日：2009-02-10
申请号：US11007961
申请日：2004-12-09
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra G. Malhotra , Fenton McFeely , Robert R. Young, Jr.
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra G. Malhotra , Fenton McFeely , Robert R. Young, Jr.
IPC分类号： B05D3/00 , B22F3/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.
摘要翻译：在配置用于诸如热化学气相沉积（TCVD）的薄膜沉积系统中的固体前驱物蒸发系统中，描述了制备一种或多种固体前体塔板的方法。固体前体可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种在诸如托盘的涂布基材上形成。

3. 发明授权

US07708835B2 Film precursor tray for use in a film precursor evaporation system and method of using 有权
标题翻译：用于薄膜前体蒸发系统的薄膜前体托盘及其使用方法
公开(公告)号：US07708835B2
公开(公告)日：2010-05-04
申请号：US11351546
申请日：2006-02-10
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa , Tadahiro Ishizaka
IPC分类号： C23C16/00 , B01D7/00
CPC分类号： C23C16/4481
摘要： A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing the deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.
摘要翻译：描述了与高电导蒸气传输系统耦合的高电导多托盘膜前体蒸发系统，以通过增加膜前体的暴露表面积来增加沉积速率。多托盘膜前体蒸发系统包括一个或多个托盘。每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

4. 发明授权

US07484315B2 Replaceable precursor tray for use in a multi-tray solid precursor delivery system 有权
标题翻译：可替换的前体托盘，用于多托盘固体前驱体输送系统
公开(公告)号：US07484315B2
公开(公告)日：2009-02-03
申请号：US11007962
申请日：2004-12-09
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa
IPC分类号： F26B25/10
CPC分类号： C23C16/16 , C23C16/4481
摘要： A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system is configured to be coupled to the process chamber of a thin film deposition system, and it includes a base tray with one or more stackable upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.
摘要翻译：描述了与用于与高电导蒸气输送系统耦合的高电导多托盘固体前体蒸发系统一起使用的可替换的前体托盘，用于通过增加固体前体的暴露表面积来提高沉积速率。多托盘固体前体蒸发系统被配置为耦合到薄膜沉积系统的处理室，并且其包括具有一个或多个可堆叠的上托盘的基托。每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

5. 发明授权

US07459396B2 Method for thin film deposition using multi-tray film precursor evaporation system 有权
标题翻译：使用多托盘膜前驱体蒸发系统进行薄膜沉积的方法
公开(公告)号：US07459396B2
公开(公告)日：2008-12-02
申请号：US11537575
申请日：2006-09-29
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Masamichi Hara , Daisuke Kuroiwa
IPC分类号： H01L21/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C. and maintaining the solid precursor at the temperature to form the vapor; and flowing the carrier gas in contact with the plurality of surfaces of the solid precursor during the heating to capture Ru3(CO)12 precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces. The method further includes transporting the process gas from the precursor evaporation system to the process chamber and exposing the patterned substrate to the process gas to deposit a Ru metal layer on the patterned substrate by a thermal CVD.
摘要翻译：一种用于从多托盘膜前体蒸发系统递送的膜前体蒸气在图案化衬底上沉积Ru金属层的方法。该方法包括在沉积系统的处理室中提供图案化衬底，并形成含有Ru 3（CO）12前体蒸气和包含CO气体的载气的工艺气体。工艺气体通过以下方式形成：在前体蒸发系统内的多个间隔的塔板中提供固体Ru 3（CO）12前体，其中每个托盘被配置为支撑固体前体，并且其中多个间隔的托盘共同提供多个固体前体表面; 将前体蒸发系统中的多个间隔的塔板中的固体前体加热到大于约60℃的温度，并将固体前体保持在该温度以形成蒸气; 并且在加热期间使载气与固体前体的多个表面接触，以在多个表面中形成蒸气时捕获载气中的Ru 3（CO）12前体蒸气。该方法还包括将处理气体从前体蒸发系统输送到处理室，并将图案化衬底暴露于工艺气体，以通过热CVD沉积图案化衬底上的Ru金属层。

6. 发明授权

US07678421B2 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US07678421B2
公开(公告)日：2010-03-16
申请号：US11856946
申请日：2007-09-18
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/16
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

7. 发明授权

US07270848B2 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US07270848B2
公开(公告)日：2007-09-18
申请号：US10996145
申请日：2004-11-23
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

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