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    • 5. 发明授权
    • Method and apparatus for managing single virtual space suitable for
distributed processing
    • 用于管理适合分布式处理的单个虚拟空间的方法和装置
    • US5829041A
    • 1998-10-27
    • US528335
    • 1995-09-14
    • Toshio OkamotoTetsuro KimuraKenji Shirakawa
    • Toshio OkamotoTetsuro KimuraKenji Shirakawa
    • G06F12/08G06F9/50G06F12/02G06F12/06G06F12/10G06F13/00
    • G06F12/1072
    • A single virtual space management scheme suitable for a distributed system. The single virtual space for arranging programs and/or data among a plurality of computers forming the distributed system are divided into a plurality of regions called memory chapters, and a part of the single virtual space to be managed independently by each computer is requested from each computer in units of these memory chapters. Then, a server allocates one of the memory chapters to each computer in response to each request from each computer, while managing allocations of the memory chapters to the plurality of computers so as not to allocate each one of the memory chapters to more than one computers. Each memory chapter allocated to each computer is independently managed by further dividing each memory chapter into a plurality of sub-regions called memory sections, and carrying out an access protection in units of these memory sections at each computer.
    • 适用于分布式系统的单一虚拟空间管理方案。 用于在形成分布式系统的多个计算机之间布置程序和/或数据的单个虚拟空间被划分为称为存储器章节的多个区域,并且从每个计算机请求由每台计算机独立管理的单个虚拟空间的一部分 计算机以这些内存章为单位。 然后,服务器响应于来自每个计算机的每个请求,向每个计算机分配其中一个内存章节,同时将多个存储器章节的分配管理到多个计算机,以便不将每个存储器章节分配给多个计算机 。 分配给每个计算机的每个存储器章节通过将每个存储器章节进一步划分成被称为存储器部分的多个子区域来独立地管理,并且在每个计算机处以这些存储器部分为单位执行访问保护。
    • 7. 发明授权
    • Plasma processing method and plasma processing apparatus
    • 等离子体处理方法和等离子体处理装置
    • US06287980B1
    • 2001-09-11
    • US09415910
    • 1999-10-12
    • Minoru HanazakiTakayuki IkushimaKenji ShirakawaShinji YamaguchiMasakazu Taki
    • Minoru HanazakiTakayuki IkushimaKenji ShirakawaShinji YamaguchiMasakazu Taki
    • H01L2100
    • H01L21/67069H01J37/3244
    • A plasma processing apparatus mainly comprises a processing chamber (10) formed by a vacuum vessel, a magnetic field forming coil (80) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (101) supplying various gases to the processing chamber (10). The processing chamber (10) is divided into a reaction chamber (44) forming plasma with a partition wall (43) and a buffer chamber (45) discharging externally supplied gases with pressure difference. The reaction chamber (44) includes a high-frequency electrode arranged oppositely to the buffer chamber (45). The gas supply means (101) includes pulse gas valves (63a and 63b) for pulsatively supplying gases to the processing chamber (10). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.
    • 一种等离子体处理装置主要包括由真空容器形成的处理室(10),设置在处理室周围的用于形成旋转磁场的磁场形成线圈(80),以及将各种气体供应至处理的气体供给装置 室(10)。 处理室(10)被分为形成等离子体的反应室(44)和分隔壁(43)以及缓冲室(45),该压力室排出外部供应压力差的气体。 反应室(44)包括与缓冲室(45)相对布置的高频电极。 气体供给装置(101)包括用于向处理室(10)脉动地供给气体的脉冲气体阀(63a和63b)。 这样提供了一种等离子体处理方法和等离子体处理装置,其能够均匀地处理具有大直径的晶片并且相对于精细蚀刻图案减小RIE滞后。