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1. 发明授权

US06518605B1 Solid state imaging pickup device and method for manufacturing the same 失效
标题翻译：固态成像拾取装置及其制造方法
公开(公告)号：US06518605B1
公开(公告)日：2003-02-11
申请号：US09770188
申请日：2001-01-29
申请人： Keisuke Hatano , Masayuki Furumiya , Toru Kawasaki
发明人： Keisuke Hatano , Masayuki Furumiya , Toru Kawasaki
IPC分类号： H01L29768
CPC分类号： H01L27/14603 , H01L27/14692
摘要： A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.
摘要翻译：一种具有单层电极结构的固态成像拾取装置，其通过用虚拟图案围绕电荷转移电极或通过连接电荷转移电极形成的图案来消除电荷转移电极的末端部分处的释放区域在最外周彼此相邻。围绕电荷转移电极，当绝缘膜被再流动以使平板化的电极间间隙时，可提高嵌入性能。这样可以形成没有阶梯切割的良好的金属线或屏蔽膜，从而提高了固态成像拾取装置的可靠性。

2. 发明授权

US5434321A Method for producing dichloropentafluoropropanes 失效
标题翻译：二氯五氟丙烷的制备方法
公开(公告)号：US5434321A
公开(公告)日：1995-07-18
申请号：US229126
申请日：1994-04-18
申请人： Keiichi Ohnishi , Hidekazu Okamoto , Toshihiro Tanuma , Koichi Yanase , Toru Kawasaki , Ryutaro Takei
发明人： Keiichi Ohnishi , Hidekazu Okamoto , Toshihiro Tanuma , Koichi Yanase , Toru Kawasaki , Ryutaro Takei
IPC分类号： C07C17/278 , C07C17/266
CPC分类号： C07C17/278
摘要： A method for producing a dichloropentafluoropropane, which comprises reacting dichlorofluoromethane (R21) with tetrafluoroethylene (4F) in the presence of a Lewis acid catalyst for addition reaction to obtain dichloropentafluoropropane, wherein a halide containing at least one element selected from the group consisting of Sb, Nb, Ta, B, Ga, In, Zr, Hf and Ti, or AlBr.sub.3, or AlI.sub.3, is used as the Lewis acid.
摘要翻译：一种二氯五氟丙烷的制造方法，其特征在于，在路易斯酸催化剂存在下，使二氯氟甲烷（R21）与四氟乙烯（4F）反应进行加成反应，得到二氯五氟丙烷，其中，含有选自Sb，使用Nb，Ta，B，Ga，In，Zr，Hf和Ti，或AlBr 3或AlI 3作为路易斯酸。

3. 发明申请

US20090030041A1 N-substituted N-(4-piperidinyl) Amide Derivative 审中-公开
标题翻译： N-取代的N-（4-哌啶基）酰胺衍生物
公开(公告)号：US20090030041A1
公开(公告)日：2009-01-29
申请号：US11662633
申请日：2005-09-13
申请人： Toshihiro Takahashi , Tsuyoshi Endo , Masatoshi Ushioda , Kunio Kobayashi , Tomio Yamakawa , Kiichi Shika , Toru Kawasaki , Toshiyasu Imai , Kenji Hirate , Takako Hirate
发明人： Toshihiro Takahashi , Tsuyoshi Endo , Masatoshi Ushioda , Kunio Kobayashi , Tomio Yamakawa , Kiichi Shika , Toru Kawasaki , Toshiyasu Imai , Kenji Hirate , Takako Hirate
IPC分类号： A61K31/4525 , C07D405/02 , A61P25/04
CPC分类号： C07D211/58 , C07D405/12 , C07D409/12
摘要： An N-substituted N-(4-piperininyl)amide derivative represented by the following formula (I): (wherein R1 represents C1-6 alkyl, furyl, etc.; R2 represents amino, acetylamino, ureido, etc.; R3 represents hydrogen, C2-8 alkoxycarbonyl, etc.; R4 represents optionally substituted phenyl, etc.; R5 represents hydroxyl, benzyloxy, etc.; R6 represents hydrogen or methyl; and m is 1 or 2) or a salt of the derivative, and an analgesic containing the derivative or salt.
摘要翻译：由下式（I）表示的N-取代的N-（4-哌啶基）酰胺衍生物：其中R1表示C1-6烷基，呋喃基等; R2表示氨基，乙酰氨基，脲基等; R3表示氢，C 2-8烷氧基羰基等; R 4表示任选取代的苯基等; R 5表示羟基，苄氧基等; R 6表示氢或甲基; m表示1或2）或该衍生物的盐，以及镇痛剂含有衍生物或盐。

4. 发明授权

US07301184B2 Solid state image sensor having planarized structure under light shielding metal layer 失效
标题翻译：在遮光金属层下具有平坦化结构的固态图像传感器
公开(公告)号：US07301184B2
公开(公告)日：2007-11-27
申请号：US10657236
申请日：2003-09-09
申请人： Toru Kawasaki
发明人： Toru Kawasaki
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14623 , H01L27/1463
摘要： Shift register electrodes are formed in an imaging area and a peripheral area through use of a single layer of conductive film, and a thick insulating film is deposited over those electrodes and planarized. The thick insulating film overlying the shift register electrodes in the peripheral area is kept as it is and on the other hand, the thick insulating film overlying the shift register electrodes is etched to just fill gaps between the shift register electrodes with the film, thereby allowing a light shielding metal layer overlying the shift register electrodes in the peripheral area and insulating films sandwiched therebetween to be formed without discontinuity. Since metal interconnect lines in the peripheral area have a thick and planarized insulating film formed thereunder, parasitic capacitance between diffusion layers/electrodes and the metal interconnect lines can be reduced, leading to reduction in power consumption of image sensor.
摘要翻译：移位寄存器电极通过使用单层导电膜形成在成像区域和外围区域中，并且在这些电极上沉积厚的绝缘膜并进行平坦化。覆盖周边区域中的移位寄存器电极的厚绝缘膜保持原样，另一方面，覆盖移位寄存器电极的厚绝缘膜被蚀刻以仅填充移位寄存器电极与膜之间的间隙，从而允许覆盖周边区域中的移位寄存器电极的遮光金属层和夹在其间的绝缘膜，而不间断地形成。由于周边区域的金属布线具有在其上形成的厚且平坦化的绝缘膜，所以可以减小扩散层/电极和金属互连线之间的寄生电容，从而降低图像传感器的功耗。

5. 发明申请

US20110042749A1 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110042749A1
公开(公告)日：2011-02-24
申请号：US12805291
申请日：2010-07-22
申请人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
发明人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L27/10894 , H01L21/823468 , H01L27/088 , H01L27/10873 , H01L29/6653
摘要： A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.
摘要翻译：第一晶体管包括第一栅极绝缘膜，第一栅电极和第一侧壁。第二晶体管包括第二栅极绝缘膜，第二栅电极和第二侧壁。电容元件连接到第二晶体管的源区和漏区的一侧。第一栅极绝缘膜具有与第二栅极绝缘膜相同的厚度，并且第一栅极电极具有与第二栅极电极的厚度相同的厚度。第二侧壁的宽度大于第一侧壁的宽度。

6. 发明授权

US5356739A Stainproof protector made from fluorine-containing aliphatic cyclic polymer for preventing staining of lithographic masks 失效
标题翻译：由含氟脂肪族环状聚合物制成的防污保护膜，用于防止光刻胶的染色
公开(公告)号：US5356739A
公开(公告)日：1994-10-18
申请号：US7818
申请日：1993-01-22
申请人： Toru Kawasaki , Masao Unoki , Masaru Nakamura
发明人： Toru Kawasaki , Masao Unoki , Masaru Nakamura
IPC分类号： G03F1/62 , H01L21/027 , G03F7/11
CPC分类号： G03F1/62 , Y10S430/162 , Y10T428/31544
摘要： A stainproof protector for preventing a mask for lithography from staining, which has a protective film made of a polymer having a fluorine-containing aliphatic cyclic structure.
摘要翻译：一种防污染保护剂，用于防止由光聚合物制成的具有含氟脂肪族环状结构的保护膜的光刻用掩模。

7. 发明授权

US5117272A Having a protective film of a polymer having a fluorine-containing aliphatic cyclic structure 失效
标题翻译：具有含氟化合物循环结构的聚合物的保护膜
公开(公告)号：US5117272A
公开(公告)日：1992-05-26
申请号：US509144
申请日：1990-04-16
申请人： Shinzou Nomura , Hiroshi Katsushima , Toru Kawasaki , Masao Unoki , Masaru Nakamura
发明人： Shinzou Nomura , Hiroshi Katsushima , Toru Kawasaki , Masao Unoki , Masaru Nakamura
IPC分类号： H01L21/312 , C08F16/32 , C08F20/52 , C08F20/54 , C09D129/00 , C09D129/10 , C09D133/02 , C09D133/24 , C09D147/00 , H01L23/29 , H01L23/31 , H01L23/556
CPC分类号： H01L23/29 , H01L23/556 , H01L2924/0002 , H01L2924/12044
摘要： A semiconductor integrated circuit device having a protective film made of a polymer having a fluorine-containing aliphatic cyclic structure.

8. 发明授权

US5220084A Method for producing dichloropentafluoropropanes 失效
标题翻译：二氯五氟丙烷的制备方法
公开(公告)号：US5220084A
公开(公告)日：1993-06-15
申请号：US914590
申请日：1992-07-20
申请人： Keiichi Ohnishi , Hidekazu Okamoto , Toshihiro Tanuma , Koichi Yanase , Toru Kawasaki , Ryutaro Takei
发明人： Keiichi Ohnishi , Hidekazu Okamoto , Toshihiro Tanuma , Koichi Yanase , Toru Kawasaki , Ryutaro Takei
IPC分类号： C07C17/278
CPC分类号： C07C17/278
摘要： A method for producing a dichloropentafluoropropane, which comprises reacting dichlorofluoromethane (R21) with tetrafluoroethylene (4F) in the presence of a Lewis acid catalyst for addition reaction to obtain dichloropentafluoropropane, wherein a halide containing at least one element selected from the group consisting of Sb, Nb, Ta, B, Ga, In, Zr, Hf and Ti, or AlBr.sub.3, or AlI.sub.3, is used as the Lewis acid.
摘要翻译：一种二氯五氟丙烷的制造方法，其特征在于，在路易斯酸催化剂存在下，使二氯氟甲烷（R21）与四氟乙烯（4F）反应进行加成反应，得到二氯五氟丙烷，其中，含有选自Sb，使用Nb，Ta，B，Ga，In，Zr，Hf和Ti，或AlBr 3或AlI 3作为路易斯酸。

9. 发明授权

US08309414B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08309414B2
公开(公告)日：2012-11-13
申请号：US12805291
申请日：2010-07-22
申请人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
发明人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
IPC分类号： H01L27/088 , H01L21/8239
CPC分类号： H01L27/10894 , H01L21/823468 , H01L27/088 , H01L27/10873 , H01L29/6653
摘要： A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.
摘要翻译：第一晶体管包括第一栅极绝缘膜，第一栅电极和第一侧壁。第二晶体管包括第二栅极绝缘膜，第二栅电极和第二侧壁。电容元件连接到第二晶体管的源区和漏区的一侧。第一栅极绝缘膜具有与第二栅极绝缘膜相同的厚度，并且第一栅极电极具有与第二栅极电极的厚度相同的厚度。第二侧壁的宽度大于第一侧壁的宽度。

10. 发明授权

US5227547A Method for producing dichloropentafluoropropanes 失效
标题翻译：生产二氯丙烷的方法
公开(公告)号：US5227547A
公开(公告)日：1993-07-13
申请号：US914591
申请日：1992-07-20
申请人： Keiichi Ohnishi , Hidekazu Okamoto , Toshihiro Tanuma , Koichi Yanase , Toru Kawasaki , Ryutaro Takei
发明人： Keiichi Ohnishi , Hidekazu Okamoto , Toshihiro Tanuma , Koichi Yanase , Toru Kawasaki , Ryutaro Takei
IPC分类号： C07C17/278
CPC分类号： C07C17/278
摘要： A method for producing a dichloropentafluoropropane, which comprises reacting dichlorofluoromethane (R21) with tetrafluoroethylene (4F) in the presence of a Lewis acid catalyst for addition reaction to obtain dichloropentafluoropropane, wherein a halide containing at least one element selected from the group consisting of Sb, Nb, Ta, B, Ga, In, Zr, Hf and Ti, or AlBr.sub.3, or AlI.sub.3, is used as the Lewis acid.
摘要翻译：一种二氯五氟丙烷的制造方法，其特征在于，在路易斯酸催化剂存在下，使二氯氟甲烷（R21）与四氟乙烯（4F）反应进行加成反应，得到二氯五氟丙烷，其中，含有选自Sb，使用Nb，Ta，B，Ga，In，Zr，Hf和Ti，或AlBr 3或AlI 3作为路易斯酸。

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