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1. 发明授权

US06184056B2 Process for producing solar cells and solar cells produced thereby 有权
标题翻译：由此生产太阳能电池和太阳能电池的方法
公开(公告)号：US06184056B2
公开(公告)日：2001-02-06
申请号：US09304280
申请日：1999-05-03
申请人： Kazuyo Nakamura , Keiji Shimada
发明人： Kazuyo Nakamura , Keiji Shimada
IPC分类号： H01L2100
CPC分类号： H01L31/0445 , B64G1/443 , H01L31/041 , H01L31/046 , H01L31/0504 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for producing a solar cell comprises the steps of; forming at least one electrode on a first surface of a semiconductor substrate for constructing a solar cell, attaching a support substrate to the first surface of the semiconductor substrate on which said electrode is formed, and then processing the semiconductor substrate into a thin-film semiconductor substrate.
摘要翻译：一种制造太阳能电池的方法包括以下步骤：在用于构造太阳能电池的半导体衬底的第一表面上形成至少一个电极，将支撑衬底附接到其上形成有所述电极的半导体衬底的第一表面，然后将半导体衬底加工成薄膜半导体基质。

2. 发明申请

US20130206228A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20130206228A1
公开(公告)日：2013-08-15
申请号：US13880804
申请日：2011-10-17
申请人： Hiroshi Yamaguchi , Kazuyo Nakamura
发明人： Hiroshi Yamaguchi , Kazuyo Nakamura
IPC分类号： H01L31/02
CPC分类号： H01L31/02013 , H01L31/022433 , H01L31/044 , H01L31/048 , H01L31/0504 , Y02E10/50
摘要： A connection part for connecting an interconnector is separated from a region having a photoelectric conversion layer formed thereon to improve a strength of the connection pad, thereby provide a solar cell suppressing cracks, breaks, and the like. A solar cell includes a photoelectric conversion layer, an electrode pad formed on the photoelectric conversion layer, an interconnector connected to the electrode pad, a metal thin film formed under the photoelectric conversion layer, a relay terminal being spaced apart from the photoelectric conversion layer and the metal thin film and connected to the metal thin film by connection conductor, and a connection pad formed on the relay terminal.
摘要翻译：用于连接互连器的连接部分与其上形成有光电转换层的区域分离，以提高连接焊盘的强度，从而提供抑制裂纹，断裂等的太阳能电池。太阳能电池包括光电转换层，形成在光电转换层上的电极焊盘，连接到电极焊盘的互连器，形成在光电转换层下面的金属薄膜，与光电转换层隔开的中继端子和金属薄膜并通过连接导体与金属薄膜连接，以及形成在中继端子上的连接焊盘。

3. 发明授权

US06504091B2 Photoelectric converting device 有权
标题翻译：光电转换装置
公开(公告)号：US06504091B2
公开(公告)日：2003-01-07
申请号：US09779827
申请日：2001-02-09
申请人： Tadashi Hisamatsu , Kazuyo Nakamura , Yuji Komatsu , Masafumi Shimizu
发明人： Tadashi Hisamatsu , Kazuyo Nakamura , Yuji Komatsu , Masafumi Shimizu
IPC分类号： H01L3104
CPC分类号： H01L31/1852 , H01L31/03046 , H01L31/0687 , H01L31/1844 , Y02E10/544
摘要： A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al1-yGay)1-xInxP, and the second pn junction is formed in a semiconductor substantially represented by Ga1-zInzAs.
摘要翻译：通过优化用于顶部和底部电池的材料的组合，光电转换装置具有增强的光电转换效率。本发明的光电转换装置具有第一和第二pn结。第一pn结形成在基本上由（Al1-yGay）1-xInxP表示的半导体中，并且第二pn结形成在基本上由Ga1-zInzAs表示的半导体中。

4. 发明授权

US5739574A SOI semiconductor device with low concentration of electric field around the mesa type silicon 失效
标题翻译： SOI半导体器件在台面型硅周围具有低浓度的电场
公开(公告)号：US5739574A
公开(公告)日：1998-04-14
申请号：US459163
申请日：1995-06-02
申请人： Kazuyo Nakamura
发明人： Kazuyo Nakamura
IPC分类号： H01L21/336 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/786 , H01L27/01 , H01L21/265 , H01L29/06 , H01L29/76
CPC分类号： H01L29/78696 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/42384 , H01L29/66757 , H01L21/76281
摘要： A semiconductor device which includes a mesa type silicon film with a source/drain region and a channel region formed therein, a gate oxide film formed on the mesa type silicon film, and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate film is formed at the top edge section of the mesa type silicon which is present under the gate electrode, as well as a method for manufacturing it.
摘要翻译：一种半导体器件，包括具有形成在其中的源极/漏极区域和沟道区域的台面型硅膜，形成在台面型硅膜上的栅极氧化膜，以及通过栅极氧化物设置在台面型硅膜上的栅电极其特征在于，在栅电极下方的台面型硅的顶缘部形成有厚度大于栅极膜的氧化膜的膜，以及其制造方法。

5. 发明授权

US6130380A Solar cell and fabrication method thereof 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US6130380A
公开(公告)日：2000-10-10
申请号：US66822
申请日：1998-04-28
申请人： Kazuyo Nakamura
发明人： Kazuyo Nakamura
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/0352 , H01L31/036 , H01L31/068 , H01L31/18 , H01L31/06
CPC分类号： H01L31/022425 , H01L31/022441 , H01L31/036 , H01L31/061 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In a solar cell, a crystal defect layer by ion implantation or an amorphous layer by ion implantation is formed between p type diffusion layers provided in an island-like manner at a side opposite to a light receiving surface of a low concentration p type semiconductor single crystalline substrate. The element of the ion implantation may be at least one selected from the group consisting of hydrogen, silicon, germanium, fluorine, oxygen and carbon. The constituent substance of the semiconductor substrate, such as Si is preferably used for the ion implantation. In such a solar cell structure having the crystal defect or amorphous layer, relatively long wavelength light that could not effectively be utilized in the prior art solar cell may be utilized so that the photoelectric conversion efficiency may be improved.
摘要翻译：在太阳能电池中，通过离子注入的晶体缺陷层或通过离子注入的非晶层形成在岛状的p型扩散层的与低浓度p型半导体单体的受光面相反的一侧晶体衬底。离子注入的元素可以是选自氢，硅，锗，氟，氧和碳中的至少一种。诸如Si的半导体衬底的构成物质优选用于离子注入。在具有晶体缺陷或非晶层的这种太阳能电池结构中，可以利用在现有技术的太阳能电池中不能有效利用的相对长的波长的光，从而可以提高光电转换效率。

6. 发明授权

US06799742B2 Solar panel for space and method for manufacturing the same 失效
标题翻译：空间太阳能电池板及其制造方法
公开(公告)号：US06799742B2
公开(公告)日：2004-10-05
申请号：US10000488
申请日：2001-12-04
申请人： Kazuyo Nakamura , Tatsuo Saga , Kunio Kamimura , Tadashi Hisamatsu
发明人： Kazuyo Nakamura , Tatsuo Saga , Kunio Kamimura , Tadashi Hisamatsu
IPC分类号： B64G144
CPC分类号： B64G1/443 , Y02E10/52 , Y10S136/292
摘要： The object of the invention is to provide a solar panel and a method for manufacturing the same, wherein the manufacture of the solar panel for use in space and repair work thereon can be performed easily and in little time. An entirety of the solar panel is configured by detachably linking a plurality of unit solar cell modules, which include a plurality of solar cells and connection wires for connecting the solar cells, and electrically connecting the unit solar cell modules to one another. Thus, a solar panel can be easily fabricated by combining standardized unit solar cell modules. Moreover, by simply mechanically connecting the unit solar cell modules, they can be electrically connected, and thus the time necessary for manufacture or repair of solar panels can be shortened.
摘要翻译：发明内容本发明的目的在于提供一种太阳能电池板及其制造方法，其特征在于，能够容易地且短时间地进行用于空间的太阳能电池板的制造和修理工作。整个太阳能电池板通过可拆卸地连接多个单元太阳能电池模块而构成，多个单元太阳能电池模块包括多个太阳能电池和用于连接太阳能电池的连接线，并且将单元太阳能电池模块彼此电连接。因此，可以通过组合标准化的单元太阳能电池模块来容易地制造太阳能电池板。此外，通过简单地机械地连接单元太阳能电池模块，它们可以电连接，因此可以缩短太阳能电池板的制造或修理所需的时间。

7. 发明授权

US6127623A Solar cell and production process therefor 有权
标题翻译：太阳能电池及其生产工艺
公开(公告)号：US6127623A
公开(公告)日：2000-10-03
申请号：US342505
申请日：1999-06-29
申请人： Kazuyo Nakamura , Kenzo Kawano , Hidetoshi Washio , Yoshifumi Tonomura , Kunio Kamimura , Hideyuki Ueyama
发明人： Kazuyo Nakamura , Kenzo Kawano , Hidetoshi Washio , Yoshifumi Tonomura , Kunio Kamimura , Hideyuki Ueyama
IPC分类号： H01L31/04 , H01L21/306 , H01L21/308 , H01L31/0236 , H01L31/068 , H01C31/0236
CPC分类号： H01L31/068 , H01L31/0236 , H01L21/30608 , H01L21/308 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A solar cell comprises a crystalline substrate having projections and depressions formed on either side or both sides of the substrate, wherein a projection-depression depth is 25 .mu.m or more.
摘要翻译：太阳能电池包括具有形成在基板的任一侧或两侧上的突起和凹陷的结晶基板，其中突起凹陷深度为25μm或更大。

8. 发明授权

US5738732A Solar cell and manufacturing method thereof 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US5738732A
公开(公告)日：1998-04-14
申请号：US657289
申请日：1996-06-04
申请人： Kazuyo Nakamura , Tadashi Hisamatsu
发明人： Kazuyo Nakamura , Tadashi Hisamatsu
IPC分类号： H01L31/04 , H01L31/0312 , H01L31/052 , H01L31/06 , H01L31/077 , H01L31/18
CPC分类号： H01L31/077 , H01L31/06 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes an n type diffusion layer formed on a first main surface side of a p.sup.- type monocrystalline Si substrate, and a p.sup.+ type semiconductor layer formed on a second main surface side of substrate and having an energy bandgap narrower than that of Si and a dopant impurity concentration higher than that of substrate.
摘要翻译：太阳能电池包括形成在p型单晶Si衬底的第一主表面侧上的n型扩散层和形成在衬底的第二主表面侧上并且具有比Si的能带隙窄的能带隙的p +型半导体层并且掺杂剂杂质浓度高于衬底的掺杂剂杂质浓度。

9. 发明授权

US09236503B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US09236503B2
公开(公告)日：2016-01-12
申请号：US13880804
申请日：2011-10-17
申请人： Hiroshi Yamaguchi , Kazuyo Nakamura
发明人： Hiroshi Yamaguchi , Kazuyo Nakamura
IPC分类号： H01L31/00 , H01L31/02 , H01L31/0224 , H01L31/048 , H01L31/05 , H01L31/044
CPC分类号： H01L31/02013 , H01L31/022433 , H01L31/044 , H01L31/048 , H01L31/0504 , Y02E10/50
摘要： A connection part for connecting an interconnector is separated from a region having a photoelectric conversion layer formed thereon to improve a strength of the connection pad, thereby provide a solar cell suppressing cracks, breaks, and the like. A solar cell includes a photoelectric conversion layer, an electrode pad formed on the photoelectric conversion layer, an interconnector connected to the electrode pad, a metal thin film formed under the photoelectric conversion layer, a relay terminal being spaced apart from the photoelectric conversion layer and the metal thin film and connected to the metal thin film by connection conductor, and a connection pad formed on the relay terminal.
摘要翻译：用于连接互连器的连接部分与其上形成有光电转换层的区域分离，以提高连接焊盘的强度，从而提供抑制裂纹，断裂等的太阳能电池。太阳能电池包括光电转换层，形成在光电转换层上的电极焊盘，连接到电极焊盘的互连器，形成在光电转换层下面的金属薄膜，与光电转换层隔开的中继端子和金属薄膜并通过连接导体与金属薄膜连接，以及形成在中继端子上的连接焊盘。

10. 发明申请

US20090283127A1 Method of Manufacturing Photoelectric Conversion Element and the Photoeletric Conversion Element 审中-公开
标题翻译：制造光电转换元件和光电转换元件的方法
公开(公告)号：US20090283127A1
公开(公告)日：2009-11-19
申请号：US11989518
申请日：2006-07-12
申请人： Hiroyuki Juso , Atsushi Yoshida , Kazuyo Nakamura , Hidetoshi Washio , Naoki Takahashi , Tatsuya Takamoto
发明人： Hiroyuki Juso , Atsushi Yoshida , Kazuyo Nakamura , Hidetoshi Washio , Naoki Takahashi , Tatsuya Takamoto
IPC分类号： H01L31/042 , H01L21/30
CPC分类号： H01L31/18 , H01L31/0693 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Disclosed is a method of manufacturing a photoelectric conversion element including a substrate and a stacked body configured of a plurality of compound semiconductor layers of different compositions sequentially stacked on the substrate, and having at least one pn junction in the stacked body. This method includes the steps of forming the stacked body configured of the plurality of compound semiconductor layers of different compositions sequentially stacked on the substrate; forming a protective film on the stacked body; forming a groove by removing at least a portion of the stacked body by at least one method selected from the group consisting of a mechanical removing method, dry etching and laser scribing; etching a side wall of the groove using an etching solution after forming the protective film and the groove; and cutting a portion corresponding to the groove for separation into a plurality of photoelectric conversion elements. Also disclosed is a photoelectric conversion element obtained by this method.
摘要翻译：公开了一种制造光电转换元件的方法，该光电转换元件包括基板和层叠体，该多个化合物半导体层由不同组成的化合物半导体层构成，顺序层叠在基板上，并且在堆叠体中具有至少一个pn结。该方法包括以下步骤：由顺序层叠在基板上的由不同组成的多个化合物半导体层构成的层叠体; 在堆叠体上形成保护膜; 通过从由机械去除方法，干蚀刻和激光划线组成的组中选择的至少一种方法去除层叠体的至少一部分来形成凹槽; 在形成保护膜和凹槽之后，使用蚀刻溶液蚀刻凹槽的侧壁; 以及将与所述槽对应的部分切割成多个光电转换元件。还公开了通过该方法获得的光电转换元件。

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