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1. 发明授权

US06831056B1 Process for preparing fine alkaline earth metal zeolite particles 失效
标题翻译：制备细碱土金属沸石颗粒的方法
公开(公告)号：US06831056B1
公开(公告)日：2004-12-14
申请号：US09868897
申请日：2001-07-06
申请人： Kazuo Oki , Hiroji Hosokawa , Mikio Sakaguchi , Hiroshi Kitagaito , Kazuo Taguchi , Hitoshi Takaya
发明人： Kazuo Oki , Hiroji Hosokawa , Mikio Sakaguchi , Hiroshi Kitagaito , Kazuo Taguchi , Hitoshi Takaya
IPC分类号： C11D714
CPC分类号： C01B39/14 , C01B39/02 , C11D3/128
摘要： A process for efficiently preparing fine zeolite particles comprising synthesizing zeolite in the presence of an alkaline earth metal-containing compound and/or with controlling the preparation process of zeolite, thereby giving fine zeolite particles being composed of crystalline aluminosilicate, the fine zeolite particles having a fine average primary particle size, being excellent in the cationic exchange properties and the oil-absorbing ability, having a fine average aggregate particle size, and being excellent in the dispersibility; fine zeolite particles obtainable by the above process; and a detergent composition comprising the fine zeolite particles, the detergent composition being excellent in the detergency.
摘要翻译：包括在含碱土金属的化合物的存在下合成沸石和/或控制沸石的制备方法的精细沸石颗粒的方法，从而得到由结晶硅铝酸盐构成的细沸石颗粒，所述细沸石颗粒具有平均一次粒径优异，阳离子交换性和油吸收性优异，平均聚集体粒径均匀，分散性优异; 通过上述方法获得的细沸石颗粒; 以及包含细小沸石颗粒的洗涤剂组合物，洗涤剂组合物的去污力优异。

2. 发明申请

US20050079994A1 Process for preparing fine zeolite particles 有权
标题翻译：制备细沸石颗粒的方法
公开(公告)号：US20050079994A1
公开(公告)日：2005-04-14
申请号：US10954087
申请日：2004-09-30
申请人： Kazuo Oki , Hiroji Hosokawa , Mikio Sakaguchi , Hiroshi Kitagaito , Kazuo Taguchi , Hitoshi Takaya
发明人： Kazuo Oki , Hiroji Hosokawa , Mikio Sakaguchi , Hiroshi Kitagaito , Kazuo Taguchi , Hitoshi Takaya
IPC分类号： C01B39/02 , C01B39/14 , C11D3/12 , C11D17/00
CPC分类号： C01B39/14 , C01B39/02 , C11D3/128
摘要： A process for efficiently preparing fine zeolite particles comprising synthesizing zeolite in the presence of an alkaline earth metal-containing compound and/or with controlling the preparation process of zeolite, thereby giving fine zeolite particles being composed of crystalline aluminosilicate, the fine zeolite particles having a fine average primary particle size, being excellent in the cationic exchange properties and the oil-absorbing ability, having a fine average aggregate particle size, and being excellent in the dispersibility; fine zeolite particles obtainable by the above process; and a detergent composition comprising the fine zeolite particles, the detergent composition being excellent in the detergency.
摘要翻译：包括在含碱土金属的化合物的存在下合成沸石和/或控制沸石的制备方法的精细沸石颗粒的方法，从而得到由结晶硅铝酸盐构成的细沸石颗粒，所述细沸石颗粒具有平均一次粒径优异，阳离子交换性和油吸收性优异，平均聚集体粒径均匀，分散性优异; 通过上述方法获得的细沸石颗粒; 以及包含细小沸石颗粒的洗涤剂组合物，洗涤剂组合物的去污力优异。

3. 发明授权

US07211555B2 Process for preparing fine zeolite particles 有权
标题翻译：制备细沸石颗粒的方法
公开(公告)号：US07211555B2
公开(公告)日：2007-05-01
申请号：US10954087
申请日：2004-09-30
申请人： Kazuo Oki , Hiroji Hosokawa , Mikio Sakaguchi , Hiroshi Kitagaito , Kazuo Taguchi , Hitoshi Takaya
发明人： Kazuo Oki , Hiroji Hosokawa , Mikio Sakaguchi , Hiroshi Kitagaito , Kazuo Taguchi , Hitoshi Takaya
IPC分类号： C11D3/08
CPC分类号： C01B39/14 , C01B39/02 , C11D3/128
摘要： A process for efficiently preparing fine zeolite particles comprising synthesizing zeolite in the presence of an alkaline earth metal-containing compound and/or with controlling the preparation process of zeolite, thereby giving fine zeolite particles being composed of crystalline aluminosilicate, the fine zeolite particles having a fine average primary particle size, being excellent in the cationic exchange properties and the oil-absorbing ability, having a fine average aggregate particle size, and being excellent in the dispersibility; fine zeolite particles obtainable by the above process; and a detergent composition comprising the fine zeolite particles, the detergent composition being excellent in the detergency.
摘要翻译：包括在含碱土金属的化合物的存在下合成沸石和/或控制沸石的制备方法的精细沸石颗粒的方法，从而得到由结晶硅铝酸盐构成的细沸石颗粒，所述细沸石颗粒具有平均一次粒径优异，阳离子交换性和油吸收性优异，平均聚集体粒径均匀，分散性优异; 通过上述方法获得的细沸石颗粒; 以及包含细小沸石颗粒的洗涤剂组合物，洗涤剂组合物的去污力优异。

4. 发明授权

US08454766B2 Extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature 有权
标题翻译：在高温下耐脆性优异的自由切削铝合金挤压材料
公开(公告)号：US08454766B2
公开(公告)日：2013-06-04
申请号：US12059904
申请日：2008-03-31
申请人： Kensuke Mori , Kazuo Taguchi
发明人： Kensuke Mori , Kazuo Taguchi
IPC分类号： C22C21/00 , C22C21/12
CPC分类号： C22C21/12
摘要： An extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature, containing from 3 to 6% by mass of Cu and from 0.9 to 3% by mass of Bi with the balance being Aluminum and inevitable impurities, wherein a temperature for reducing the Charpy impact test value to half of the value at room temperature is 180° C. or more.
摘要翻译：含有3〜6质量％的Cu和0.9〜3质量％的Bi，余量为铝和不可避免的杂质的高温耐脆性优异的自由切削铝合金挤出材料，其中，将夏比冲击试验值降低到室温下的一半值的温度为180℃以上。

5. 发明授权

US06962632B2 Aluminum alloy hollow material, aluminum alloy extruded pipe material for air conditioner piping and process for producing the same 有权
公开(公告)号：US06962632B2
公开(公告)日：2005-11-08
申请号：US10772044
申请日：2004-02-04
申请人： Kazuo Taguchi , Toshio Ohta
发明人： Kazuo Taguchi , Toshio Ohta
IPC分类号： C22C21/00 , C22F1/04
CPC分类号： C22F1/04 , C22C21/00
摘要： Disclosed are aluminum alloy hollow materials and processes for producing the same wherein an aluminum alloy hollow material is produced by subjecting an ingot of an aluminum alloy containing 0.3˜1.5 wt % Mn to port hole extrusion or port hole extrusion and drawing-elongation processing and wherein a difference in electric conductivity between individual portions in lengthwise direction of the hollow material is not more than 1.0 IACS %. According to the aluminum alloy hollow materials, preferential corrosion in welding potions in port hole extrusion can be prevented.

6. 发明申请

US20050082613A1 Semiconductor integrated circuit device and semiconductor memory using the same 审中-公开
标题翻译：半导体集成电路器件和使用其的半导体存储器
公开(公告)号：US20050082613A1
公开(公告)日：2005-04-21
申请号：US10917500
申请日：2004-08-13
申请人： Kazuo Taguchi
发明人： Kazuo Taguchi
IPC分类号： H01L21/28 , H01L21/8238 , H01L21/8244 , H01L21/84 , H01L27/092 , H01L27/11 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78615 , H01L21/84 , H01L27/1104 , H01L27/1203 , H01L29/42384 , H01L29/78621
摘要： Aspects of the invention can provide a semiconductor device including a transistor having a gate shape, which enables a source area and a body contact area to be connected without using wiring and with no gate part protruding to the source area side, and a semiconductor memory. The semiconductor device can have field regions, a transistor which includes a gate (L type gate), a gate insulating film directly below the gate, a body area directly below the gate insulating film, and a source area and a drain area formed on both sides which hold the body area in between. The gate can consist essentially of a first part extending along a channel width direction on the field region and a second part protruding from one end of the first part in the channel width direction to the drain side, and being formed in the L type gate in a plan view. A body contact area can be provided on the field region on the opposite side to the first part with the second part of the L type gate in between, and a low resistant layer is formed on a surface between the source area and the body contact area.
摘要翻译：本发明的方面可以提供一种半导体器件，其包括具有栅极形状的晶体管，其能够在不使用布线并且没有栅极部分突出到源极区侧的情况下连接源极区域和本体接触区域，以及半导体存储器。半导体器件可以具有场区域，晶体管包括栅极（L型栅极），栅极正下方的栅极绝缘膜，栅极绝缘膜正下方的体区，以及形成在两者上的源极区和漏极区身体区域之间的两侧。栅极基本上可以由场区域上的沟道宽度方向延伸的第一部分和从沟道宽度方向上的第一部分的一端突出到漏极侧的第二部分形成在L型栅极中一个平面图。可以在与第一部分相反的一侧的场区域上设置体接触区域，其中L型栅极的第二部分在其间，并且在源区域和身体接触区域之间的表面上形成低阻力层。

7. 发明授权

US06327891B1 Gas sensor 失效
标题翻译：气体传感器
公开(公告)号：US06327891B1
公开(公告)日：2001-12-11
申请号：US09257513
申请日：1999-02-25
申请人： Keiichi Noda , Kazuo Taguchi , Hisaharu Nishio , Katsuhisa Yabuta
发明人： Keiichi Noda , Kazuo Taguchi , Hisaharu Nishio , Katsuhisa Yabuta
IPC分类号： G01N2704
CPC分类号： G01N27/407
摘要： A gas sensor has a structure in which an insulator is disposed inside a metallic shell, and a sensor element is disposed inside the insulator. A cavity is formed in the insulator to surround the sensor element. A sealing material mainly formed of glass is charged into the cavity in order to establish sealing between the inner surface of the insulator and the outer surface of the sensor element. The sensor element has a rectangular cross section, and the inner surface of the insulator defining the cavity has a sectional profile corresponding to the sectional profile of the sensor element.
摘要翻译：气体传感器具有绝缘体设置在金属壳内部的结构，并且传感器元件设置在绝缘体的内部。在绝缘体中形成腔体以包围传感器元件。主要由玻璃形成的密封材料被填充到空腔中，以便在绝缘体的内表面和传感器元件的外表面之间建立密封。传感器元件具有矩形横截面，并且限定空腔的绝缘体的内表面具有对应于传感器元件的截面轮廓的截面轮廓。

8. 发明申请

US20050077576A1 Semiconductor device and semiconductor memory using the same 失效
标题翻译：半导体器件和使用其的半导体存储器
公开(公告)号：US20050077576A1
公开(公告)日：2005-04-14
申请号：US10924995
申请日：2004-08-25
申请人： Kazuo Taguchi
发明人： Kazuo Taguchi
IPC分类号： H01L27/10 , G11C11/412 , H01L21/8244 , H01L27/02 , H01L27/11 , H01L27/12 , H01L29/786 , G11C11/34 , G11C16/04 , H01L27/01
CPC分类号： G11C11/412 , H01L27/0207 , H01L27/1104 , H01L27/1203
摘要： Aspects of the invention can provide a semiconductor device and a semiconductor memory using the semiconductor device having a gate shape by which the width of the gate can be realized as designed even if relative shifts occur between the masks for forming the field regions and the gate patterns. The semiconductor device can include, in field regions, a gate (an H-type gate), a gate insulating film right under the gate, a body region right under the gate insulating film, and source/drain regions formed on both sides of and across the body region. The H-type gate can have a first section extending along the channel width direction on the field region, and a pair of second sections formed on both ends of the first section in the channel width direction and extending along the channel length direction, and is formed to be an H shape in plan view. Since a part of each of the pair of second sections of the H-type gate can be formed on a part of the field region having a constant length in the channel length direction, the channel width can be defined by the length of the first section.
摘要翻译：本发明的方面可以提供半导体器件和半导体存储器，其使用具有栅极形状的半导体器件，通过该栅极形状可以实现栅极的宽度，即使在用于形成场区域的掩模和栅极图案之间发生相对偏移。半导体器件可以在场区域中包括栅极（H型栅极），栅极正下方的栅极绝缘膜，栅极绝缘膜正下方的主体区域和形成在栅极绝缘膜两侧的源极/漏极区域穿过身体区域。 H型栅极可以具有沿着场区域上的沟道宽度方向延伸的第一部分，以及在沟道宽度方向上形成在第一部分的两端并沿着沟道长度方向延伸的一对第二部分，并且是在平面图中形成为H形。由于H型栅极的一对第二部分中的每一个的一部分可以形成在沟道长度方向上具有恒定长度的场区域的一部分上，所以沟道宽度可以由第一部分的长度。

9. 发明授权

US5849165A Oxygen sensor for preventing silicon poisoning 失效
标题翻译：用于防止硅中毒的氧传感器
公开(公告)号：US5849165A
公开(公告)日：1998-12-15
申请号：US408132
申请日：1995-03-21
申请人： Takao Kojima , Hiroyuki Ishiguro , Masaru Yamano , Toshiki Sawada , Kazuo Taguchi , Masahiko Yamada , Noriaki Kondo
发明人： Takao Kojima , Hiroyuki Ishiguro , Masaru Yamano , Toshiki Sawada , Kazuo Taguchi , Masahiko Yamada , Noriaki Kondo
IPC分类号： G01N27/407 , G01N27/416 , G01N27/12 , G01N27/409 , G01N27/41
CPC分类号： G01N27/4075 , G01N27/4077
摘要： Oxygen sensor element (ZrO.sub.2 solid electrolyte etc) for detecting oxygen concentration in an exhaust gas has a protective layer which is made of a heat-resistant metal oxide and which carries a component of a IIa subgroup element (Ca, Mg etc) on the side exposed to the exhaust gas of the sensor element, at least a part of the protective layer being present as a nonstoichiometric compound (Ti oxide etc) with respect to the heat-resistant metal oxide. Si-poisoning is prevented. Heater for heating the sensor element is provided for preventing Si-poisoning at low temperatures.
摘要翻译：用于检测排气中的氧浓度的氧传感器元件（ZrO 2固体电解质等）具有由耐热性金属氧化物构成的保护层，该保护层在侧面具有IIa族成分元素（Ca，Mg等）的成分暴露于传感器元件的废气中，保护层的至少一部分作为非化学计量的化合物（Ti氧化物等）相对于耐热金属氧化物存在。预防中毒。提供用于加热传感器元件的加热器用于在低温下防止Si中毒。

10. 发明授权

US4945009A Electroluminescence device 失效
标题翻译：电致发光器件
公开(公告)号：US4945009A
公开(公告)日：1990-07-31
申请号：US166986
申请日：1988-03-11
申请人： Kazuo Taguchi , Moriaki Fuyama , Kenichi Onisawa , Katsumi Tamura , Yoshimasa Ono , Yoshio Abe , Takahiro Nakayama , Akira Sato , Kenichi Hashimoto
发明人： Kazuo Taguchi , Moriaki Fuyama , Kenichi Onisawa , Katsumi Tamura , Yoshimasa Ono , Yoshio Abe , Takahiro Nakayama , Akira Sato , Kenichi Hashimoto
IPC分类号： H05B33/12 , G09F9/33 , H05B33/14 , H05B33/22
CPC分类号： H05B33/145 , G09F9/33 , H05B33/22 , Y10S428/917
摘要： In an electroluminescence element including light emitting layers emitting light by applying AC voltages thereto the light emitting layer consists of a light emitting layer emitting red light and a light emitting layer emitting bluish green light and a blue filter transmitting blue light and a green filter transmitting green light are disposed on the light emitting surface side of the bluish green light emitting layer. In this way it is possible to take out red, blue and green lights at an approximately equal brightness level and to realize full color.
摘要翻译：在包括通过施加AC电压发光的发光层的电致发光元件中，发光层由发射红光的发光层和发出蓝绿色光的发光层和透射蓝光的蓝色滤光器以及绿色滤光片组成光被设置在蓝绿色发光层的发光表面侧。以这种方式，可以以大致相等的亮度级别取出红色，蓝色和绿色的灯光并实现全彩色。

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