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1. 发明申请

US20060274456A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060274456A1
公开(公告)日：2006-12-07
申请号：US11477402
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

2. 发明申请

US20060268467A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060268467A1
公开(公告)日：2006-11-30
申请号：US11477410
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

3. 发明授权

US07161774B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US07161774B2
公开(公告)日：2007-01-09
申请号：US11376290
申请日：2006-03-16
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

4. 发明授权

US06999287B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US06999287B2
公开(公告)日：2006-02-14
申请号：US10803144
申请日：2004-03-18
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

5. 发明申请

US20050219772A1 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 有权
公开(公告)号：US20050219772A1
公开(公告)日：2005-10-06
申请号：US11139680
申请日：2005-05-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G01R33/09 , G11B5/00 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

6. 发明授权

US06934132B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
标题翻译：磁阻效应元件，磁阻效应头，磁阻传感器系统和磁存储系统
公开(公告)号：US06934132B2
公开(公告)日：2005-08-23
申请号：US09916529
申请日：2001-07-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G01R31/317 , G01R33/09 , G11B5/00 , G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed inmediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.
摘要翻译：磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。在下导电层上提供自由层。在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不立即放置在垂直偏置层上方。非磁性层，固定层，固定层和上层被埋在绝缘层中。此外，在上层和绝缘层上设置有上导电层。在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离层保持不变。

7. 发明授权

US06714374B1 Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus 失效
标题翻译：磁阻传感器，磁阻磁头和磁记录/重放装置
公开(公告)号：US06714374B1
公开(公告)日：2004-03-30
申请号：US09652821
申请日：2000-08-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Stuart Solin , Tao Zhou
发明人： Kazuhiko Hayashi , Keishi Ohashi , Stuart Solin , Tao Zhou
IPC分类号： G11B503
CPC分类号： G11B5/3993 , G01R33/09 , G11B5/00 , G11B5/378 , G11B2005/0008 , G11B2005/0016 , H01L43/08
摘要： A magnetoresistive sensor includes a magnetoresistive element and equipment which generates a magnetic field in the magnetoresistive element thereby inducing a biasing magnetic field in the element, where the magnetoresistive element comprises a high electron mobility semiconductor and electrodes which are connected to the semiconductor. If it is an insulator, the equipment, which generates the biasing magnetic field and supplies it to the magnetoresistive element, may contact directly to the magnetoresistive element. If it is a conductor, an insulating separation layer must be set between the equipment and the element. A magnetoresistive element is representatively Corbino disk type or a bar type magnetoresistive element. Another candidate of the magnetoresistive element is an element consisting of a high electron mobility semiconductor, a pair of electrodes which make a current path in the high electron mobility semiconductor, and another pair of electrodes to detect the induced voltage by the current.
摘要翻译：磁阻传感器包括磁阻元件和在磁阻元件中产生磁场的设备，从而在元件中产生偏置磁场，其中磁阻元件包括高电子迁移率半导体和连接到半导体的电极。如果它是绝缘体，则产生偏置磁场并将其提供给磁阻元件的设备可以直接接触磁阻元件。如果是导体，必须在设备和元件之间设置绝缘分离层。磁阻元件是代表性的Corbino盘型或棒式磁阻元件。磁阻元件的另一个候选物是由高电子迁移率半导体，在高电子迁移率半导体中形成电流路径的一对电极以及用电流检测感应电压的另一对电极组成的元件。

8. 发明授权

US07372673B2 Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer 有权
标题翻译：具有纵向偏置层和控制层的磁阻效应传感器直接连接到自由层
公开(公告)号：US07372673B2
公开(公告)日：2008-05-13
申请号：US11139680
申请日：2005-05-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

9. 发明申请

US20060232894A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060232894A1
公开(公告)日：2006-10-19
申请号：US11376290
申请日：2006-03-16
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

10. 发明授权

US06950290B2 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 失效
标题翻译：磁阻效应传感器具有直接连接到自由层的纵向偏置层
公开(公告)号：US06950290B2
公开(公告)日：2005-09-27
申请号：US10241520
申请日：2002-09-12
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G01R33/09 , G11B5/00 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

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