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1. 发明申请

US20160027986A1 THERMOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
标题翻译：热电元件及其制造方法和包括其的半导体器件
公开(公告)号：US20160027986A1
公开(公告)日：2016-01-28
申请号：US14740466
申请日：2015-06-16
申请人： KWANG-HO KIM , Jun-Hyeok YANG , Hyung-Jong KO , Se-Ki KIM , Ho-Jin PARK , Se-Ra AN
发明人： KWANG-HO KIM , Jun-Hyeok YANG , Hyung-Jong KO , Se-Ki KIM , Ho-Jin PARK , Se-Ra AN
IPC分类号： H01L35/32
CPC分类号： H01L35/32 , H01L25/18 , H01L27/16 , H01L2924/0002 , Y10S257/93
摘要： A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.
摘要翻译：如下提供热电元件。第一和第二半导体鳍片结构设置在半导体衬底上。每个半导体鳍结构在从半导体衬底突出的第一方向上延伸。第一和第二半导体纳米线分别设置在第一和第二半导体鳍片结构上。第一半导体纳米线包括第一杂质。第二半导体纳米线包括与第一杂质不同的第二杂质。第一电极连接到第一和第二半导体纳米线的第一端。第二电极连接到第一半导体纳米线的第二端。第三电极连接到第二半导体纳米线的第二端。

2. 发明申请

US20160111134A1 POWER PATH CONTROLLER OF A SYSTEM-ON-CHIP 有权
标题翻译：系统芯片的电力通道控制器
公开(公告)号：US20160111134A1
公开(公告)日：2016-04-21
申请号：US14813896
申请日：2015-07-30
申请人： Se-Ki KIM , Dae-Yong KIM , Dong-Hun HEO
发明人： Se-Ki KIM , Dae-Yong KIM , Dong-Hun HEO
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C5/143
摘要： A power path controller included in a system-on-chip (SoC) is provided. The power path controller is coupled to a first power source and a second power source. The power path controller includes a first switch located between the first power source and a memory core included in the SoC, a second switch located between the second power source and the memory core, a comparator configured to compare a first power supply voltage supplied from the first power source with a second power supply voltage supplied from the second power source, and a switch controller configured to selectively activate the first switch or the second switch according to a comparison result of the comparator.
摘要翻译：提供了包括在片上系统（SoC）中的电源路径控制器。电源路径控制器耦合到第一电源和第二电源。功率路径控制器包括位于第一电源和包括在SoC中的存储器核心之间的第一开关，位于第二电源和存储器芯之间的第二开关，比较器，被配置为比较从第二电源提供的第一电源电压第一电源，具有从第二电源提供的第二电源电压;以及开关控制器，被配置为根据比较器的比较结果选择性地启动第一开关或第二开关。

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