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1. 发明授权

US07618894B2 Multi-step selective etching for cross-point memory 失效
标题翻译：用于交叉点存储器的多步选择性蚀刻
公开(公告)号：US07618894B2
公开(公告)日：2009-11-17
申请号：US11881475
申请日：2007-07-26
申请人： Jonathan Bornstein , Travis Byonghyop
发明人： Jonathan Bornstein , Travis Byonghyop
IPC分类号： H01L21/465
CPC分类号： H01L21/32136 , G11C13/0009 , H01L27/101 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/147 , H01L45/1675
摘要： Multi-step selective etching. Etching an unmasked region associated with each layer of a plurality of layers, the plurality of layers comprising a stack, wherein the unmasked region of each of the plurality of layers is etched while exposed to a temperature, a pressure, a vacuum, using a plurality of etchants, wherein at least one of the plurality of etchants comprises an inert gas and oxygen, wherein the etchant oxidizes the at least one layer that can be oxidized such that the etching stops, the plurality of etchants leaving substantially unaffected a masked region associated with each layer of the plurality of layers, wherein two or more of the plurality of layers comprises a memory stack, and preventing corrosion of at least one of the plurality of layers comprising a conductive metal oxide by supplying oxygen to the stack after etching the unmasked region without breaking the vacuum.
摘要翻译：多步选择性蚀刻。蚀刻与多个层的每个层相关联的未掩模区域，所述多个层包括堆叠，其中在暴露于温度，压力，真空的情况下，多层中的每一层的未屏蔽区域被蚀刻，使用多个层的蚀刻剂，其中所述多个蚀刻剂中的至少一个包含惰性气体和氧气，其中所述蚀刻剂氧化所述至少一个可被氧化的层，使得蚀刻停止，所述多个蚀刻剂基本上不影响与所述多个层中的每个层，其中所述多个层中的两个或更多层包括存储堆叠，并且通过在蚀刻所述未掩模区域之后向所述堆叠提供氧而防止包括导电金属氧化物的所述多个层中的至少一个的腐蚀不破坏真空。

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