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1. 发明授权

US5633886A Short wavelength VCSEL with Al-free active region 失效
标题翻译：具有无Al活性区域的短波长VCSEL
公开(公告)号：US5633886A
公开(公告)日：1997-05-27
申请号：US520061
申请日：1995-08-28
申请人： Jamal Ramdani , Michael S. Lebby , Hsing-Chung Lee
发明人： Jamal Ramdani , Michael S. Lebby , Hsing-Chung Lee
IPC分类号： H01S5/00 , H01S5/183 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3406 , H01S5/34326 , H01S5/3434
摘要： A short wavelength VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of quantum well layers of GaAsP having barrier layers of GaInP sandwiched therebetween, the quantum well and barrier layers having substantially equal and opposite lattice mismatch.
摘要翻译：一种短波长VCSEL，其包括位于基板上的反射镜堆叠，由多对相对较高和较低的折射率折射率层组成，第二反射镜叠层由多对相对较高和较低的折射率折射率层组成，区域夹在第一堆叠和第二堆叠之间，有源区域由GaAsP的量子阱层形成，其中GaInP的阻挡层夹在其间，量子阱和势垒层具有基本相等且相反的晶格失配。

2. 发明授权

US6121068A Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication 失效
标题翻译：长波长发光垂直腔表面发射激光器及其制造方法
公开(公告)号：US6121068A
公开(公告)日：2000-09-19
申请号：US47954
申请日：1998-03-26
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S3/02 , H01S5/00 , H01S5/02 , H01S5/183 , H01L21/00
CPC分类号： H01S5/1838 , H01S5/021 , H01S5/0217 , H01S5/18341 , H01S5/18369
摘要： A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.
摘要翻译：用于光通信的长波长垂直腔表面发射激光器（VCSEL）和制造方法，其包括在支撑衬底上制造有源VCSEL结构，以及在硅衬底上制造高反射性DBR镜结构。 DBR镜结构包括使用SOI晶片融合技术利用外延生长技术和/或晶片结合制造的氧化硅材料和硅材料的交替层。在制造最终的VCSEL器件期间，Si / SiO 2 DBR镜结构被晶片结合到有源VCSEL结构。选择性地去除主动VCSEL结构支撑衬底，以便能够定位第二DBR反射镜堆叠。最终的VCSEL器件的特征在于发射红外光。

3. 发明授权

US6080690A Textile fabric with integrated sensing device and clothing fabricated thereof 失效
标题翻译：具有集成传感装置的织物和由其制成的衣服
公开(公告)号：US6080690A
公开(公告)日：2000-06-27
申请号：US69591
申请日：1998-04-29
申请人： Michael S. Lebby , Karen E. Jachimowicz , Jamal Ramdani
发明人： Michael S. Lebby , Karen E. Jachimowicz , Jamal Ramdani
IPC分类号： A41D31/00 , D03D15/00 , G01K1/02 , H01Q1/27
CPC分类号： G01K1/02 , A41D31/00 , D03D15/00 , D03D15/0066 , H01Q1/273 , D10B2101/20 , D10B2401/16 , D10B2401/20 , D10B2501/00 , Y10T442/3228 , Y10T442/3236 , Y10T442/3252 , Y10T442/339
摘要： A textile fabric including a plurality of electrically conductive fibers and at least one electronic sensor or a plurality of sensing fibers. The textile fabric is intended for fabrication into a functional article of clothing or other item made of the woven textile fabric, so as to increase functionality of the article of clothing or item made thereof. The fabric is intended to assist a wearer in the monitoring of biomedical information and/or environmental conditions existent upon the wearer. The plurality of electrically conductive fibers and sensing devices are characterized as creating an interconnect to a portable electronic monitoring device, integrated components such as heating and cooling bands, electronics, or the like, or for serving as an antenna for signals received and transmitted between an integrated electronic component and a remote monitoring device.
摘要翻译：一种纺织品，其包括多个导电纤维和至少一个电子传感器或多个感测纤维。纺织织物旨在制造成由织造织物制成的衣服或其他物品的功能性制品，以增加衣服制品或其制成的物品的功能。织物旨在帮助佩戴者监测佩戴者上存在的生物医学信息和/或环境条件。多个导电纤维和感测装置的特征在于形成与便携式电子监视装置的互连，诸如加热和冷却带，电子装置等的集成部件，或用作用于在集成电子元件和远程监控设备。

4. 发明授权

US5923696A Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication 失效
标题翻译：可见光发射垂直腔表面发射激光器与磷化镓接触层及其制造方法
公开(公告)号：US5923696A
公开(公告)日：1999-07-13
申请号：US774822
申请日：1996-12-27
申请人： Jamal Ramdani , Michael S. Lebby , Philip Kiely
发明人： Jamal Ramdani , Michael S. Lebby , Philip Kiely
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S3/19
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/0421 , H01S5/34326
摘要： A stack of distributed Bragg reflectors is disposed on the surface of a semiconductor substrate. The stack includes a plurality of alternating layers of material having alternating refractive indexes with the stack having a first dopant type. A first cladding region is disposed on the stack with an active area disposed on the first cladding region. The active area includes at least two barrier layers and a quantum well layer. A second cladding region is disposed on the active area with a stack of distributed Bragg reflectors disposed on the cladding region. A contact region is disposed on the second stack of distributed Bragg reflectors. The contact region includes a magnesium doped gallium phosphide material.
摘要翻译：分布式布拉格反射器的堆叠被布置在半导体衬底的表面上。堆叠包括具有交替折射率的多个交替层的材料，堆叠具有第一掺杂剂类型。第一包层区域设置在堆叠上，具有设置在第一包层区域上的有源区域。有源区包括至少两个势垒层和量子阱层。第二包层区域设置在有源区上，并且布置在包层区域上的分布式布拉格反射器堆叠。接触区域布置在分布布拉格反射器的第二堆叠上。接触区域包括掺杂镁的磷化镓材料。

5. 发明授权

US5943357A Long wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabrication 失效
标题翻译：长波长垂直腔表面发射激光器，具有用于自动功率控制的光电检测器和制造方法
公开(公告)号：US5943357A
公开(公告)日：1999-08-24
申请号：US912605
申请日：1997-08-18
申请人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
发明人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
IPC分类号： H01S5/026 , H01S5/183 , H01S5/323 , H01S3/19 , H01L21/20 , H01S3/08
CPC分类号： H01S5/0264 , B82Y20/00 , H01S5/183 , H01S5/3202 , H01S5/32366 , H01S5/34306
摘要： A long wavelength VCSEL with a photodetector, wherein the VCSEL includes a first and second stack of DBRs disposed on a first surface of a first substrate element, having an active region sandwiched therebetween, and a PIN photodetector including a first doped region disposed on a second substrate element, a undoped region disposed on the first doped region, and a second doped region disposed on the undoped region. The PIN photodetector is mounted to an opposed surface of the first substrate element, thereby monitoring a back VCSEL emission. The device is fabricated to allow for automatic power control (APC) of the VCSEL.
摘要翻译：一种具有光电检测器的长波长VCSEL，其中所述VCSEL包括布置在第一衬底元件的第一表面上的第一和第二堆叠DBR，所述第一和第二叠层的DBR具有夹在其间的有源区和PIN光检测器，所述PIN光检测器包括设置在第二衬底元件上的第一掺杂区域衬底元件，设置在第一掺杂区域上的未掺杂区域，以及设置在未掺杂区域上的第二掺杂区域。 PIN光检测器安装在第一衬底元件的相对表面上，从而监测反向VCSEL发射。该器件被制造成允许VCSEL的自动功率控制（APC）。

6. 发明授权

US5741724A Method of growing gallium nitride on a spinel substrate 失效
标题翻译：在尖晶石衬底上生长氮化镓的方法
公开(公告)号：US5741724A
公开(公告)日：1998-04-21
申请号：US774819
申请日：1996-12-27
申请人： Jamal Ramdani , Michael S. Lebby , Paige M. Holm
发明人： Jamal Ramdani , Michael S. Lebby , Paige M. Holm
IPC分类号： C30B29/38 , H01L21/20 , H01L21/203 , H01L21/205 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , Y10S438/967
摘要： A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.
摘要翻译：一种通过提供具有表面的支撑衬底在尖晶石衬底上生长氮化镓的方法，并且在支撑衬底的表面上设置多个缓冲层。多个缓冲层包括与尖晶石衬底失配百分比低的氮氧化铝的第一缓冲层。第二缓冲层设置在第一缓冲层上，并且包括具有低位错密度的多层梯度的氮氧化铝。氮化铝的第三缓冲层设置在第二缓冲层上。氮化镓的第四缓冲层设置在第三缓冲层上。随后，在第四缓冲层上制造诸如激光，LED或检测器之类的光子器件结构，诸如场效应晶体管或调制掺杂场效应晶体管的电子器件结构或光波导。

7. 发明授权

US5638392A Short wavelength VCSEL 失效
标题翻译：短波长VCSEL
公开(公告)号：US5638392A
公开(公告)日：1997-06-10
申请号：US441270
申请日：1995-05-15
申请人： Jamal Ramdani , Michael S. Lebby , Piotr Grodzinski
发明人： Jamal Ramdani , Michael S. Lebby , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/02 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/0211 , H01S5/0212 , H01S5/3201 , H01S5/32333 , H01S5/34326
摘要： A short wavelength vertical cavity surface emitting laser (101) is provided. A substrate (102) having a surface (103), wherein the substrate (102) includes gallium arsenide phosphide is formed. A first stack of mirrors (106) overlying the first surface (103) of the substrate (102) is formed. A first cladding region (107) is formed overlying the first stack of mirrors (106). An active region (108) is formed overlying the first cladding region (107). A second cladding region (109) is formed overlying the active region (108). A second stack of mirrors (110) is formed overlying the second cladding region (109). A contact region (126) is formed overlying the second stack of mirrors (110).
摘要翻译：提供了一种短波长垂直腔面发射激光器（101）。具有表面（103）的基板（102），其中形成基板（102）包括砷化镓磷化物。形成覆盖衬底（102）的第一表面（103）的第一叠反射镜（106）。第一包层区域（107）形成在第一反射镜叠层（106）上。在第一包层区（107）上形成有源区（108）。第二包层区域（109）形成在有源区域（108）上。在第二包层区域（109）上形成第二层反射镜（110）。接触区域（126）形成在第二反射镜叠层（110）上。

8. 发明授权

US6061380A Vertical cavity surface emitting laser with doped active region and method of fabrication 失效
标题翻译：具有掺杂有源区的垂直腔表面发射激光器及其制造方法
公开(公告)号：US6061380A
公开(公告)日：2000-05-09
申请号：US929515
申请日：1997-09-15
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/183 , H01S5/30 , H01S3/08 , H01S3/085
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3086 , H01S5/34313
摘要： VCSEL for high speed operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes a plurality of quantum well layers, or structures, and a plurality of doped barrier layers. The doping of the barrier layers allows for a faster recombination time of the carriers prior to any occurrence of lateral carrier diffusion. This faster recombination time of the carriers prevents turn-off tails when the VCSEL device is switched off.
摘要翻译：用于高速操作的VCSEL和制造方法包括衬底元件，布置在衬底元件的表面上的分布式布拉格反射器的第一叠层，与分布布拉格反射器的第一叠层的表面匹配的有源区域晶格，以及第二分布的布拉格反射器的堆叠与有源区域的表面匹配。有源区包括多个量子阱层或结构，以及多个掺杂阻挡层。势垒层的掺杂允许在任何出现横向载流子扩散之前载体的更快的复合时间。当VCSEL器件关闭时，载波的这种更快的复合时间防止关断尾部。

9. 发明授权

US6026111A Vertical cavity surface emitting laser device having an extended cavity 失效
标题翻译：具有延伸空腔的垂直腔表面发射激光器件
公开(公告)号：US6026111A
公开(公告)日：2000-02-15
申请号：US959572
申请日：1997-10-28
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/14 , H01S5/183 , H01S3/08
CPC分类号： H01S5/18308 , H01S2301/166 , H01S5/18369 , H01S5/18377 , H01S5/1838 , H01S5/18388 , H01S5/2063
摘要： An extended VCSEL structure formed of a first DBR mirror, an active region, a second DBR mirror as partial reflector, and an extended cavity provided by a transparent conductive substrate wafer fused onto the second DBR mirror. The transparent conductive substrate also serves as a convex mirror with a highly reflective dielectric coating to complete the extended cavity VCSEL structure. The use of the extended cavity makes high power single mode operation achievable because an extended cavity introduces high modal loss to the high order laser modes while supporting the lowest order single mode. The large active area allows high output power from the VCSEL.
摘要翻译：由第一DBR镜，有源区，作为部分反射器的第二DBR镜形成的扩展VCSEL结构以及由透明导电衬底晶片提供的扩展腔，所述透明导电衬底晶片融合到第二DBR镜上。透明导电基板还用作具有高反射介电涂层的凸面镜，以完成扩展腔VCSEL结构。使用扩展腔可实现高功率单模操作，因为扩展腔在支持最低阶单模时对高阶激光模式引入高模态损耗。大的有源区域允许来自VCSEL的高输出功率。

10. 发明授权

US6021146A Vertical cavity surface emitting laser for high power single mode operation and method of fabrication 失效
标题翻译：垂直腔表面发射激光器，用于高功率单模操作和制造方法
公开(公告)号：US6021146A
公开(公告)日：2000-02-01
申请号：US929377
申请日：1997-09-15
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/183 , H01S3/085
CPC分类号： H01S5/18308 , B82Y20/00 , H01S2301/166 , H01S2301/176 , H01S5/18333 , H01S5/2063 , H01S5/2072 , H01S5/3054 , H01S5/34313
摘要： A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an enhanced conductivity region formed within a central portion of the second stack of distributed Bragg reflectors and within the laser emission path. The enhanced conductivity region is defined by either zinc diffusion or beryllium implants. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.
摘要翻译：一种用于大功率单模操作的VCSEL及其制造方法，包括：衬底元件，布置在衬底元件表面上的分布式布拉格反射器的第一叠层;与分布布拉格反射器的第一叠层表面匹配的有源区域晶格，以及与激活区域的表面晶格匹配的分布式布拉格反射器的第二堆叠。 VCSEL结构包括形成在分布布拉格反射器的第二堆叠的中心部分内并在激光发射路径内的增强的导电区域。增强的电导率区域由锌扩散或铍植入物定义。电触点耦合到分布布拉格反射器的第二堆叠的表面，并且电触点定位在衬底元件的表面上。

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