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1. 发明授权

US08081502B1 Memory elements with body bias control 有权
标题翻译：记忆元素与身体偏差控制
公开(公告)号：US08081502B1
公开(公告)日：2011-12-20
申请号：US12345560
申请日：2008-12-29
申请人： Irfan Rahim , Jun Liu , Andy L. Lee , William Bradley Vest , Lu Zhou , Qi Xiang , Yanzhong Yu , Jeffrey Xiaoqi Tung , Albert Ratnakumar
发明人： Irfan Rahim , Jun Liu , Andy L. Lee , William Bradley Vest , Lu Zhou , Qi Xiang , Yanzhong Yu , Jeffrey Xiaoqi Tung , Albert Ratnakumar
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： An integrated circuit with memory elements is provided. The memory elements may have memory element transistors with body terminals. Body bias control circuitry may supply body bias voltages that strengthen or weaken memory element transistors to improve read and write margins. The body bias control circuitry may dynamically control body bias voltages so that time-varying body bias voltages are supplied to memory element transistors. Address transistors and latch transistors in the memory elements may be selectively strengthened and weakened. Process variations may be compensated by weakening fast transistors and strengthening slow transistors with body bias adjustments.
摘要翻译：提供了一种具有存储元件的集成电路。存储器元件可以具有带有主体端子的存储器元件晶体管。体偏置控制电路可以提供加强或削弱存储元件晶体管的体偏置电压，以改善读和写余量。体偏置控制电路可以动态地控制体偏置电压，从而将时变体偏置电压提供给存储元件晶体管。存储元件中的地址晶体管和锁存晶体管可以被选择性地加强和削弱。过程变化可以通过削弱快速晶体管和加强具有体偏置调整的慢晶体管来补偿。

2. 发明授权

US08482963B1 Integrated circuits with asymmetric and stacked transistors 有权
标题翻译：具有不对称和堆叠晶体管的集成电路
公开(公告)号：US08482963B1
公开(公告)日：2013-07-09
申请号：US12629831
申请日：2009-12-02
申请人： Jun Liu , Yanzhong Xu , Shankar Sinha , Shih-Lin S. Lee , Jeffrey Xiaoqi Tung , Albert Ratnakumar , Qi Xiang , Irfan Rahim , Andy L. Lee , Jeffrey T. Watt , Srinivas Perisetty
发明人： Jun Liu , Yanzhong Xu , Shankar Sinha , Shih-Lin S. Lee , Jeffrey Xiaoqi Tung , Albert Ratnakumar , Qi Xiang , Irfan Rahim , Andy L. Lee , Jeffrey T. Watt , Srinivas Perisetty
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.
摘要翻译：不对称晶体管可以通过在晶体管的一个源极 - 漏极端子上而不是另一个产生凹穴注入来形成。也可以使用具有不同功函数的第一和第二栅极导体的双栅结构来形成非对称晶体管。可以通过堆叠相同通道类型的两个晶体管串联形成堆叠晶体管。两个晶体管中的每一个的源极 - 漏极端子之一连接到公共节点。两个晶体管的栅极也连接在一起。两个晶体管可以具有不同的阈值电压。位于堆叠晶体管中较高的晶体管的阈值电压可以具有比堆叠晶体管中的另一个晶体管更低的阈值电压。堆叠的晶体管可用于减少诸如存储器单元的电路中的漏电流。不对称晶体管也可用于存储器单元中以减少泄漏。

3. 发明授权

US08633731B1 Programmable integrated circuit with thin-oxide passgates 有权
标题翻译：可编程集成电路与薄氧化物通风门
公开(公告)号：US08633731B1
公开(公告)日：2014-01-21
申请号：US13206401
申请日：2011-08-09
申请人： Irfan Rahim , Mao Du , Jeffrey Xiaoqi Tung , Jun Liu , Qi Xiang
发明人： Irfan Rahim , Mao Du , Jeffrey Xiaoqi Tung , Jun Liu , Qi Xiang
IPC分类号： G06F7/38
CPC分类号： H03K19/1733 , G11C8/16 , G11C11/419
摘要： Integrated circuits such as programmable integrated circuits may have configuration random-access memory elements. The configuration random-access memory elements may be loaded with configuration data to customize programmable circuitry on the integrated circuits. Each memory element may have a bistable element that is powered using a positive power supply voltage and a negative power supply voltage. Programmable transistors in the programmable circuitry may have gates coupled to outputs of the bistable elements. The programmable transistors may have gate insulators that are thinner than gate insulators in the transistors of the bistable elements and may have threshold voltages of about zero volts. During operation, some of the configuration random-access memory elements may supply negative voltages to their associated programmable transistors so that the programmable transistors are provided with gate-source voltages of less than zero volts.
摘要翻译：诸如可编程集成电路的集成电路可以具有配置随机存取存储器元件。配置随机存取存储器元件可以被加载配置数据以定制集成电路上的可编程电路。每个存储元件可以具有使用正电源电压和负电源电压供电的双稳态元件。可编程电路中的可编程晶体管可以具有耦合到双稳态元件的输出的栅极。可编程晶体管可以具有比双稳态元件的晶体管中的栅极绝缘体更薄的栅极绝缘体，并且可以具有约零伏特的阈值电压。在操作期间，一些配置随机存取存储器元件可以向其相关联的可编程晶体管提供负电压，使得可编程晶体管具有小于零伏的栅极 - 源极电压。

4. 发明授权

US08242581B1 Mixed-gate metal-oxide-semiconductor varactors 有权
标题翻译：混合栅极金属氧化物半导体变容二极管
公开(公告)号：US08242581B1
公开(公告)日：2012-08-14
申请号：US12324793
申请日：2008-11-26
申请人： Albert Ratnakumar , Wilson Wong , Jun Liu , Qi Xiang , Jeffrey Xiaoqi Tung
发明人： Albert Ratnakumar , Wilson Wong , Jun Liu , Qi Xiang , Jeffrey Xiaoqi Tung
IPC分类号： H01L29/93
CPC分类号： H01L29/94 , H01L29/4983 , H01L29/93
摘要： Mixed gate varactors are provided. The mixed gate varactors may include a semiconductor region of a given doping type. A first terminal for the varactor may be formed from a gate structure on the semiconductor region. A second terminal for the varactor may be formed from a heavily doped region in the semiconductor region that has the same doping type as the given doping type. A third terminal for the varactor may be formed from a heavily doped region in the semiconductor region that has a different doping type than the given doping type. The gate structure may include multiple gate conductors on a gate insulator. The gate insulator may be a high-K dielectric. The gate conductors may be metals or other materials that have different work functions. A conductive layer such as a layer of polysilicon may electrically connect the first and second gate conductors.
摘要翻译：提供混合栅极变容二极管。混合栅极变容二极管可以包括给定掺杂型的半导体区域。用于变容二极管的第一端可以由半导体区域上的栅极结构形成。用于变容二极管的第二端子可以由具有与给定掺杂类型相同的掺杂类型的半导体区域中的重掺杂区域形成。用于变容二极管的第三端子可以由具有与给定掺杂类型不同的掺杂类型的半导体区域中的重掺杂区域形成。栅极结构可以包括栅极绝缘体上的多个栅极导体。栅极绝缘体可以是高K电介质。栅极导体可以是具有不同功函数的金属或其它材料。诸如多晶硅层的导电层可电连接第一和第二栅极导体。

5. 发明授权

US08735983B2 Integrated circuit transistors with multipart gate conductors 有权
标题翻译：具有多部分栅极导体的集成电路晶体管
公开(公告)号：US08735983B2
公开(公告)日：2014-05-27
申请号：US12324791
申请日：2008-11-26
申请人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
发明人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
IPC分类号： H01L21/02 , H01L21/336 , H01L21/8238 , H01L29/66 , H01L21/28 , H01L29/49
CPC分类号： H01L21/823842 , H01L21/28 , H01L21/28061 , H01L29/49 , H01L29/4983 , H01L29/66477 , H01L29/66545 , H01L29/7831 , H01L29/7833
摘要： Metal-oxide-semiconductor transistors are provided. A metal-oxide-semiconductor transistor may be formed on a semiconductor substrate. Source and drain regions may be formed in the substrate. A gate insulator such as a high-K dielectric may be formed between the source and drain regions. A gate may be formed from multiple gate conductors. The gate conductors may be metals with different workfunctions. A first of the gate conductors may form a pair of edge gate conductors that are adjacent to dielectric spacers. An opening between the edge gate conductors may be filled with the second gate conductor to form a center gate conductor. A self-aligned gate formation process may be used in fabricating the metal-oxide-semiconductor transistor.
摘要翻译：提供了金属氧化物半导体晶体管。可以在半导体衬底上形成金属氧化物半导体晶体管。源极和漏极区可以形成在衬底中。可以在源极和漏极区域之间形成诸如高K电介质的栅极绝缘体。栅极可以由多个栅极导体形成。栅极导体可以是具有不同功函数的金属。栅极导体中的第一个可以形成与电介质间隔物相邻的一对边缘栅极导体。边缘栅极导体之间的开口可以用第二栅极导体填充以形成中心栅极导体。可以在制造金属氧化物半导体晶体管中使用自对准栅极形成工艺。

6. 发明授权

US08138791B1 Stressed transistors with reduced leakage 有权
标题翻译：压力降低的晶体管泄漏
公开(公告)号：US08138791B1
公开(公告)日：2012-03-20
申请号：US12694603
申请日：2010-01-27
申请人： Albert Ratnakumar , Jun Liu , Jeffrey Xiaoqi Tung , Qi Xiang
发明人： Albert Ratnakumar , Jun Liu , Jeffrey Xiaoqi Tung , Qi Xiang
IPC分类号： H03K19/177
CPC分类号： H03K19/0008 , H01L27/11807 , H01L29/78 , H01L29/7843 , H01L29/7847 , H01L29/7848
摘要： Integrated circuits with stressed transistors are provided. Stressing transistors may increase transistor threshold voltage without the need to increase channel doping. Stressing transistors may reduce total leakage currents. It may be desirable to compressively stress N-channel metal-oxide-semiconductor (NMOS) transistors and tensilely stress P-channel metal-oxide-semiconductor (PMOS) transistors to reduce leakage currents. Techniques that can be used to alter the amount of stressed experienced by transistors may include forming a stress-inducing layer, forming a stress liner, forming diffusion active regions using silicon germanium, silicon carbon, or standard silicon, implementing transistors in single-finger instead of multi-finger configurations, and implanting particles. Any combination of these techniques may be used to provide appropriate amounts of stress to increase the performance or decrease the total leakage current of a transistor.
摘要翻译：提供了具有应力晶体管的集成电路。应力晶体管可以增加晶体管阈值电压，而不需要增加沟道掺杂。应力晶体管可能会减少总漏电流。可能需要压缩应力N沟道金属氧化物半导体（NMOS）晶体管和拉伸应力P沟道金属氧化物半导体（PMOS）晶体管以减少漏电流。可用于改变晶体管经受的应力的技术可包括形成应力诱导层，形成应力衬垫，使用硅锗，硅碳或标准硅形成扩散有源区，以单指代替晶体管的多指配置和植入颗粒。可以使用这些技术的任何组合来提供适当量的应力以增加晶体管的性能或降低总泄漏电流。

7. 发明申请

US20100127331A1 ASYMMETRIC METAL-OXIDE-SEMICONDUCTOR TRANSISTORS 审中-公开
标题翻译：不对称金属氧化物半导体晶体管
公开(公告)号：US20100127331A1
公开(公告)日：2010-05-27
申请号：US12324789
申请日：2008-11-26
申请人： Albert Ratnakumar , Jun Liu , Jeffrey Xiaoqi Tung , Qi Xiang
发明人： Albert Ratnakumar , Jun Liu , Jeffrey Xiaoqi Tung , Qi Xiang
IPC分类号： H01L29/78 , G06F17/50
CPC分类号： G06F17/5063 , H01L29/4983 , H01L29/66545 , H01L29/78
摘要： Mixed gate metal-oxide-semiconductor transistors are provided. The transistors may have an asymmetric configuration that exhibits increased output resistance. Each transistor may be formed from a gate insulating layer formed on a semiconductor. The gate insulating layer may be a high-K material. Source and drain regions in the semiconductor may define a transistor gate length. The gate length may be larger than the minimum specified by semiconductor fabrication design rules. The transistor gate may be formed from first and second gate conductors with different work functions. The relative sizes of the first and gate conductors in a given transistor control the threshold voltage for the transistor. A computer-aided design tool may be used to receive a circuit design from a user. The tool may generate fabrication masks for the given design that include mixed gate transistors with threshold voltages optimized to meet circuit design criteria.
摘要翻译：提供混合栅极金属氧化物半导体晶体管。晶体管可以具有表现出增加的输出电阻的非对称配置。每个晶体管可以由形成在半导体上的栅极绝缘层形成。栅极绝缘层可以是高K材料。半导体中的源极和漏极区域可以限定晶体管栅极长度。栅极长度可以大于由半导体制造设计规则规定的最小值。晶体管栅极可以由具有不同功函数的第一和第二栅极导体形成。给定晶体管中的第一和栅极导体的相对尺寸控制晶体管的阈值电压。计算机辅助设计工具可用于从用户接收电路设计。该工具可以为给定的设计生成包括混合栅极晶体管的制造掩模，其具有优化的阈值电压以满足电路设计标准。

8. 发明申请

US20100127332A1 INTEGRATED CIRCUIT TRANSISTORS 有权
标题翻译：集成电路晶体管
公开(公告)号：US20100127332A1
公开(公告)日：2010-05-27
申请号：US12324791
申请日：2008-11-26
申请人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
发明人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
IPC分类号： H01L29/68 , H01L21/18
CPC分类号： H01L21/823842 , H01L21/28 , H01L21/28061 , H01L29/49 , H01L29/4983 , H01L29/66477 , H01L29/66545 , H01L29/7831 , H01L29/7833
摘要： Metal-oxide-semiconductor transistors are provided. A metal-oxide-semiconductor transistor may be formed on a semiconductor substrate. Source and drain regions may be formed in the substrate. A gate insulator such as a high-K dielectric may be formed between the source and drain regions. A gate may be formed from multiple gate conductors. The gate conductors may be metals with different workfunctions. A first of the gate conductors may form a pair of edge gate conductors that are adjacent to dielectric spacers. An opening between the edge gate conductors may be filled with the second gate conductor to form a center gate conductor. A self-aligned gate formation process may be used in fabricating the metal-oxide-semiconductor transistor.
摘要翻译：提供了金属氧化物半导体晶体管。可以在半导体衬底上形成金属氧化物半导体晶体管。源极和漏极区可以形成在衬底中。可以在源极和漏极区域之间形成诸如高K电介质的栅极绝缘体。栅极可以由多个栅极导体形成。栅极导体可以是具有不同功函数的金属。栅极导体中的第一个可以形成与电介质间隔物相邻的一对边缘栅极导体。边缘栅极导体之间的开口可以用第二栅极导体填充以形成中心栅极导体。可以在制造金属氧化物半导体晶体管中使用自对准栅极形成工艺。

9. 发明授权

US08804407B1 PMOS pass gate 有权
标题翻译： PMOS通孔
公开(公告)号：US08804407B1
公开(公告)日：2014-08-12
申请号：US13181219
申请日：2011-07-12
申请人： Jun Liu , Albert Ratnakumar , Irfan Rahim , Qi Xiang
发明人： Jun Liu , Albert Ratnakumar , Irfan Rahim , Qi Xiang
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , H03K2217/0054
摘要： An IC that includes a memory cell and a pass gate coupled to the memory cell, where the pass gate includes a PMOS transistor, is described. In one implementation, the PMOS transistor has a negative threshold voltage. In one implementation, the memory cell includes thick oxide transistors.
摘要翻译：描述了包括耦合到存储器单元的存储单元和通过栅极的IC，其中栅极包括PMOS晶体管。在一个实现中，PMOS晶体管具有负阈值电压。在一个实现中，存储单元包括厚的氧化物晶体管。

10. 发明授权

US08921170B1 Integrated circuits with asymmetric pass transistors 有权
标题翻译：具有不对称传输晶体管的集成电路
公开(公告)号：US08921170B1
公开(公告)日：2014-12-30
申请号：US13408959
申请日：2012-02-29
申请人： Jun Liu , Albert Ratnakumar , Mark T. Chan , Irfan Rahim
发明人： Jun Liu , Albert Ratnakumar , Mark T. Chan , Irfan Rahim
IPC分类号： H01L21/338
CPC分类号： H01L21/823418 , H01L21/324 , H01L21/823814 , H01L27/082 , H01L27/088 , H01L29/1083 , H01L29/6653 , H01L29/66659
摘要： Asymmetric transistors such as asymmetric pass transistors may be formed on an integrated circuit. The asymmetric transistors may have gate structures. Symmetric pocket implants may be formed in source-drains on opposing sides of each transistor gate structure. Selective heating may be used to asymmetrically diffuse the implants. Selective heating may be implemented by patterning the gate structures on a semiconductor substrate so that the spacing between adjacent gate structures varies. A given gate structure may be located between first and second adjacent gate structures spaced at different respective distances from the given gate structure. A larger gate structure spacing leads to a greater substrate temperature rise than a smaller gate structure spacing. The pocket implant diffuses more in portions of the substrate with the greater temperature rise, producing asymmetric transistors. Asymmetric pass transistors may be controlled by static control signals from memory elements to implement circuits such as programmable multiplexers.
摘要翻译：不对称晶体管，例如不对称传输晶体管可以形成在集成电路上。不对称晶体管可以具有栅极结构。可以在每个晶体管栅极结构的相对侧上的源极漏极中形成对称的袋状植入物。选择性加热可用于不对称地扩散植入物。可以通过在半导体衬底上图案化栅极结构来实现选择性加热，使得相邻栅极结构之间的间隔变化。给定的栅极结构可以位于与给定栅极结构不同的相应距离处间隔开的第一和第二相邻栅极结构之间。较大的栅极结构间隔导致比较小栅极结构间隔更大的衬底温度升高。在较大的温度上升的情况下，口袋植入物在衬底的部分扩散，产生不对称晶体管。不对称传输晶体管可以由来自存储器元件的静态控制信号来控制，以实现诸如可编程多路复用器之类的电路。

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