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    • 1. 发明申请
    • SOLAR CELL USING P-I-N NANOWIRES
    • 太阳能电池使用P-I-N纳米
    • WO2011005013A3
    • 2011-04-14
    • PCT/KR2010004395
    • 2010-07-06
    • IUCF HYUKIM TAE-WHANYOU JOO-HYUNGJUNG JAE-HUNYI JAE-SEOKPARK WON-IL
    • KIM TAE-WHANYOU JOO-HYUNGJUNG JAE-HUNYI JAE-SEOKPARK WON-IL
    • H01L31/042
    • H01L31/03529H01L31/035281Y02E10/50
    • The present invention relates to a solar cell using p-i-n nanowires, which efficiently absorbs solar light of within a wide range of wavelengths without a loss of light and generates photovoltaic power, and which involves a simple process and has low process costs. The solar cell using p-i-n nanowires according to the present invention comprises a semiconductor layer and a photovoltaic layer. The photovoltaic layer includes a semiconductor structure constituted by a core-nanowire which extends upwardly from the semiconductor layer and which consists of an intrinsic semiconductor material, and a shell-nanowire which covers the outside of the core-nanowire and which consists of a semiconductor material. The semiconductor material which forms the semiconductor layer is an n-type and the semiconductor material which forms the cell-nanowire is a p-type. Alternatively, the semiconductor material which forms the semiconductor layer is a p-type and the semiconductor material which forms the cell-nanowire is an n-type.
    • 本发明涉及一种使用p-i-n纳米线的太阳能电池,其在不损失光线的情况下有效地吸收宽波长范围内的太阳光并且产生光伏电力,并且其涉及简单的工艺并且具有低的工艺成本。 使用根据本发明的p-i-n纳米线的太阳能电池包括半导体层和光伏层。 该光电层包括由从半导体层向上延伸并由本征半导体材料构成的核 - 纳米线和覆盖核 - 纳米线外部并且由半导体材料构成的壳纳米线构成的半导体结构 。 形成半导体层的半导体材料是n型,并且形成单元纳米线的半导体材料是p型。 或者,形成半导体层的半导体材料是p型,并且形成单元纳米线的半导体材料是n型。