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1. 发明授权

US5171412A Material deposition method for integrated circuit manufacturing 失效
标题翻译：集成电路制造的材料沉积方法
公开(公告)号：US5171412A
公开(公告)日：1992-12-15
申请号：US749096
申请日：1991-08-23
申请人： Homoyoun Talieh , Avi Tepman , Hoa Thi Kieu , Chien-Rhone Wang
发明人： Homoyoun Talieh , Avi Tepman , Hoa Thi Kieu , Chien-Rhone Wang
IPC分类号： C23C14/04 , C23C14/22 , C23C14/34 , C23C14/54 , C23C14/58 , C23C28/00 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/321 , H01L21/768
CPC分类号： C23C14/046 , C23C14/34 , H01L21/2855 , H01L21/321 , H01L21/76877
摘要： The improved material deposition process of the present invention utilizes a first, low temperature deposition step followed by a second, high temperature/high power deposition step. In the first deposition step a collimation plate is placed between the sputtering target and the substrate, such that a collimated stream of sputtered material is deposited upon the substrate. The collimated stream provides a seed layer which aids in eliminating voids by partially filling the holes and grooves in the surface of the substrate. The second deposition step is conducted as a high temperature sputtering deposition. At the high temperature the sputtered material joins and flows with the seed layer, whereby the holes and grooves are more easily filled without voids and an improved planarized layer is achieved.

2. 发明授权

US5108570A Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer 失效
标题翻译：用于在步进半导体膜上形成铝层的多层溅射工艺
公开(公告)号：US5108570A
公开(公告)日：1992-04-28
申请号：US502362
申请日：1990-03-30
申请人： Chien-Rhone Wang
发明人： Chien-Rhone Wang
IPC分类号： H01L21/768
CPC分类号： H01L21/7684 , H01L21/76877
摘要： A multistep aluminum sputtering process is disclosed wherein aluminum is sputtered onto the surface of a semiconductor wafer and low areas between closely spaced apart raised portions on the wafer, such as closely spaced apart steps, narrow trenches, or small diameter vias, are completely fulled in by the sputtered aluminum. This results in the formation of an aluminum layer which is not thinned out in such low areas, and which has a surface which ranges from substantially planar to a positive slope, such as shown at 24' and 26' in FIG. 2. The first step is carried out by sputtering from about 200 to about 2000 Angstroms of aluminum while the wafer temperature is within a range of from about 50.degree. C. to about 250.degree. C. and the sputtering plasma is at a power of from about 1 to about 16 kilowatts. The power level range is then changed to from about 14 to about 20 kilowatts, a DC or AC bias is applied to the wafer, and aluminum is then sputtered either for an additional time period of about 20 to about 40 seconds or until the wafer temperature reaches 500.degree. C., whichever occurs first, in a second step. Then the back side of the wafer is contacted by a thermally conductive gas to control the wafer temperature while further aluminum is optionally sputtered onto the wafer for an additional 0 to 45 seconds in a third step.

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