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    • 8. 发明授权
    • Semiconductor device, light emitting apparatus and electronic device
    • 半导体装置,发光装置和电子装置
    • US08410482B2
    • 2013-04-02
    • US13075411
    • 2011-03-30
    • Kunihiro MatsudaHiroshi MatsumotoYukikazu Tanaka
    • Kunihiro MatsudaHiroshi MatsumotoYukikazu Tanaka
    • H01L29/04H01L29/76H01L21/02H01L31/062G11C21/00
    • H01L27/3262G09G3/3233G09G2300/0842H01L27/124
    • Disclosed in a semiconductor device including a substrate, a first transistor, a second transistor, and a first source electrode and a first drain electrode of the first transistor are arranged along a first direction and a second source electrode and a second drain electrode of the second transistor are arranged in a reverse order of the first source electrode and the first drain electrode along the first direction, the first source electrode and the second source electrode are connected by a source connecting wiring, the first drain electrode and the second drain electrode are connected by a drain connecting wiring, a first gate electrode and a second gate electrode are connected by a gate connecting wiring and the source connecting wiring and the drain connecting wiring are provided at positions except a region overlapped with the first gate electrode, the second gate electrode and the gate connecting wiring.
    • 公开在包括第一晶体管的衬底,第一晶体管,第二晶体管以及第一晶体管的第一源极和第一漏电极的半导体器件中,沿着第一方向布置第二源电极和第二漏电极, 晶体管沿着第一方向以与第一源电极和第一漏电极相反的顺序排列,第一源电极和第二源电极通过源极连接布线连接,第一漏电极和第二漏极连接 通过漏极连接布线,第一栅电极和第二栅极通过栅极连接布线连接,源极连接布线和漏极连接布线设置在除了与第一栅电极,第二栅电极 和门连接接线。
    • 10. 发明授权
    • Method and apparatus for writing
    • 写作方法和装置
    • US08309283B2
    • 2012-11-13
    • US12649846
    • 2009-12-30
    • Yasuo KatoJun YashimaHiroshi MatsumotoTomoo MotosugiTomohiro IijimaTakayuki Abe
    • Yasuo KatoJun YashimaHiroshi MatsumotoTomoo MotosugiTomohiro IijimaTakayuki Abe
    • G03C5/00
    • G03F1/68B82Y10/00B82Y40/00G21K1/025H01J37/3174
    • A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.
    • 一种写入方法包括计算用于校正带电粒子束写入中的邻近效应的邻近效应校正剂量,对于通过将目标对象的写入区域虚拟地分成多个第一网格尺寸的第一网格区域而制成的每个第一网格区域 通过使用计算的邻近效应校正剂量和相对于计算区域的一部分的第一网格尺寸的面积密度来计算雾化效果校正剂量,以计算用于校正雾化效果的雾化效果校正剂量 带电粒子束写入,并且相对于计算区域的剩余部分使用相对于第一网格尺寸大的第二网格尺寸的面积密度,合成每个图像的雾化效果校正剂量和邻近效应校正剂量 第一网格区域,并且通过使用基于合成校正剂量的带电粒子束将目标物体上的图案写入。