会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Solid-state image pickup apparatus
    • 固态摄像装置
    • US07679658B2
    • 2010-03-16
    • US11564567
    • 2006-11-29
    • Katsuhito SakuraiMasaru FujimuraMasanori Ogura
    • Katsuhito SakuraiMasaru FujimuraMasanori Ogura
    • H04N9/64
    • H04N5/374H04N5/3575H04N5/361H04N5/3742H04N5/378
    • It is intended to obtain a high quality image which is not affected by the fluctuation of dark outputs, and pixels having a specifically large dark output, called defects, and has no lateral line etc. A solid-state image pickup apparatus including: an aperture pixel region which accumulates and outputs the electric charges generated depending on incident light; a light shielded optical black region; a black reference pixel region in which no impurity region for accumulating electric charges is formed; and level shifting means which shifts the reference level of the output signals of the black reference pixel region with respect to the reference levels of the output signals of the aperture pixel region and the optical black region, is provided.
    • 旨在获得不受暗输出的波动影响的高质量图像,以及具有特别大的暗输出的像素,称为缺陷,并且没有侧线等。固态图像拾取装置包括:孔径 像素区域,其累积并输出根据入射光产生的电荷; 遮光光学黑色区域; 形成用于积蓄电荷的杂质区域的黑色参照像素区域; 并且提供了相对于开口像素区域和光学黑色区域的输出信号的参考电平偏移黑色参考像素区域的输出信号的参考电平的电平移位装置。
    • 7. 发明授权
    • Solid-state image pickup apparatus
    • 固态摄像装置
    • US07227208B2
    • 2007-06-05
    • US11190964
    • 2005-07-28
    • Masanori OguraFumihiro InuiToru KoizumiSeiichiro Sakai
    • Masanori OguraFumihiro InuiToru KoizumiSeiichiro Sakai
    • H01L27/146H01L31/14
    • H01L27/14609H01L27/14603H01L27/14641H01L31/035236
    • The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.
    • 本发明是为了抑制光电二极管的漏电流和漏电流的不均匀性。 在具有比形成在p型半导体中形成的n型半导体区域的光电二极管和相邻元件之间形成的元件隔离绝缘膜中的浓度高的沟道停止区域的光电转换装置中, 形成在元件隔离绝缘膜下面的布线层和形成在元件隔离绝缘膜上的部分中的布线层,与光电二极管相邻的元件隔离绝缘膜上的布线层在有效区域和电位中被统一, 并且在穿过元件隔离绝缘膜的与布线层相对的区域的至少一部分中提供了比沟道停止区域中更高浓度的p型暗电流减小区域。
    • 8. 发明申请
    • Solid-state image pickup apparatus
    • 固态摄像装置
    • US20060027843A1
    • 2006-02-09
    • US11190964
    • 2005-07-28
    • Masanori OguraFumihiro InuiToru KoizumiSeiichiro Sakai
    • Masanori OguraFumihiro InuiToru KoizumiSeiichiro Sakai
    • H01L31/113
    • H01L27/14609H01L27/14603H01L27/14641H01L31/035236
    • The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.
    • 本发明是为了抑制光电二极管的漏电流和漏电流的不均匀性。 在具有比形成在p型半导体中形成的n型半导体区域的光电二极管和相邻元件之间形成的元件隔离绝缘膜中的浓度高的沟道停止区域的光电转换装置中, 形成在元件隔离绝缘膜下面的布线层和形成在元件隔离绝缘膜上的部分中的布线层,与光电二极管相邻的元件隔离绝缘膜上的布线层在有效区域和电位中被统一, 并且在穿过元件隔离绝缘膜的与布线层相对的区域的至少一部分中提供了比沟道停止区域中更高浓度的p型暗电流减小区域。
    • 9. 发明授权
    • Method for driving a photoelectric conversion device with isolation switches arranged between signal lines and amplifiers
    • 用于驱动设置在信号线和放大器之间的隔离开关的光电转换装置的方法
    • US08520108B2
    • 2013-08-27
    • US13085575
    • 2011-04-13
    • Masanori OguraToru KoizumiMasaru Fujimura
    • Masanori OguraToru KoizumiMasaru Fujimura
    • H04N3/14H04N5/335
    • H04N5/378H04N5/3575H04N5/374
    • A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.
    • 光电转换装置防止由转印开关的寄生电容引起的伪信号被输入到放大器。 光电转换装置(50)包括向信号线(107)输出信号的像素(10),放大经由信号线(107)供给的信号的放大器和插入在信号线(107)之间的隔离开关 信号线(108)和放大器的输入节点。 像素(10)包括光电二极管,浮动扩散(FD),将光电二极管的电荷传送到FD的转移开关,以及根据电位将信号输出到信号线(109)的放大晶体管 的FD。 至少在用于控制像素(10)的转印开关的转印脉冲转移的期间,隔离开关(121)截止。
    • 10. 发明申请
    • PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE
    • 光电转换装置和成像装置
    • US20080062296A1
    • 2008-03-13
    • US11850266
    • 2007-09-05
    • Masanori OguraToru KoizumiMasaru Fujimura
    • Masanori OguraToru KoizumiMasaru Fujimura
    • H04N3/14
    • H04N5/378H04N5/3575H04N5/374
    • A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.
    • 光电转换装置防止由转移开关的寄生电容引起的伪信号被输入到放大器。 光电转换装置(50)包括向信号线(107)输出信号的像素(10),放大经由信号线(107)供给的信号的放大器,以及插入在信号线 信号线(108)和放大器的输入节点。 像素(10)包括光电二极管,浮动扩散(FD),将光电二极管的电荷传送到FD的转移开关,以及根据电位将信号输出到信号线(109)的放大晶体管 的FD。 至少在用于控制像素(10)的转印开关的转印脉冲转移的期间,隔离开关(121)截止。