专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06667248B2 Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers 失效
标题翻译：低偏压沉积高密度等离子体化学气相沉积硅酸盐玻璃层
公开(公告)号：US06667248B2
公开(公告)日：2003-12-23
申请号：US09949414
申请日：2001-09-05
申请人： Hichem M'Saad , Chad Peterson , Zhuang Li , Anchuan Wang , Farhad Moghadam
发明人： Hichem M'Saad , Chad Peterson , Zhuang Li , Anchuan Wang , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31629
摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.
摘要翻译：提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。含氟气体的流量与含硅气体的流量比大于0.65。通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。以大于0.8W / cm 2且小于2.4W / cm 2的偏置功率密度对处理室中的衬底施加偏压。使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

2. 发明申请

US20060207294A1 METHOD OF FORMING A PHOSPHORUS DOPED OPTICAL CORE USING A PECVD PROCESS 失效
公开(公告)号：US20060207294A1
公开(公告)日：2006-09-21
申请号：US11422278
申请日：2006-06-05
申请人： Hichem M'Saad , Anchuan Wang , Sang Ahn
发明人： Hichem M'Saad , Anchuan Wang , Sang Ahn
IPC分类号： C03B37/018 , C03B37/022
CPC分类号： G02B6/132 , C23C16/401 , C23C16/505 , G02B2006/12169 , G02B2006/12176
摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

3. 发明授权

US07080528B2 Method of forming a phosphorus doped optical core using a PECVD process 失效
标题翻译：使用PECVD工艺形成掺磷光纤芯的方法
公开(公告)号：US07080528B2
公开(公告)日：2006-07-25
申请号：US10279366
申请日：2002-10-23
申请人： Hichem M'Saad , Anchuan Wang , Sang Ahn
发明人： Hichem M'Saad , Anchuan Wang , Sang Ahn
IPC分类号： C03B37/018
CPC分类号： G02B6/132 , C23C16/401 , C23C16/505 , G02B2006/12169 , G02B2006/12176
摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
摘要翻译：本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

4. 发明授权

US07383702B2 Method of forming a phosphorus doped optical core using a PECVD process 失效
标题翻译：使用PECVD工艺形成掺磷光纤芯的方法
公开(公告)号：US07383702B2
公开(公告)日：2008-06-10
申请号：US11422278
申请日：2006-06-05
申请人： Hichem M'Saad , Anchuan Wang , Sang Ahn
发明人： Hichem M'Saad , Anchuan Wang , Sang Ahn
IPC分类号： G02B6/10 , C03B37/018
CPC分类号： G02B6/132 , C23C16/401 , C23C16/505 , G02B2006/12169 , G02B2006/12176
摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
摘要翻译：本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

5. 发明授权

US07325419B2 Method of forming a phosphorus doped optical core using a PECVD process 失效
公开(公告)号：US07325419B2
公开(公告)日：2008-02-05
申请号：US11422299
申请日：2006-06-05
申请人： Hichem M'Saad , Anchuan Wang , Sang Ahn
发明人： Hichem M'Saad , Anchuan Wang , Sang Ahn
IPC分类号： C03B37/022 , G02B6/10
CPC分类号： G02B6/132 , C23C16/401 , C23C16/505 , G02B2006/12169 , G02B2006/12176
摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

6. 发明申请

US20060266081A1 METHOD OF FORMING A PHOSPHORUS DOPED OPTICAL CORE USING A PECVD PROCESS 失效
标题翻译：使用PECVD工艺形成磷光体光学核心的方法
公开(公告)号：US20060266081A1
公开(公告)日：2006-11-30
申请号：US11422299
申请日：2006-06-05
申请人： Hichem M'Saad , Anchuan Wang , Sang Ahn
发明人： Hichem M'Saad , Anchuan Wang , Sang Ahn
IPC分类号： C03B37/022 , C03B37/018 , C03C25/00
CPC分类号： G02B6/132 , C23C16/401 , C23C16/505 , G02B2006/12169 , G02B2006/12176
摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
摘要翻译：本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

7. 发明授权

US07205240B2 HDP-CVD multistep gapfill process 失效
标题翻译： HDP-CVD多步填缝工艺
公开(公告)号：US07205240B2
公开(公告)日：2007-04-17
申请号：US10456611
申请日：2003-06-04
申请人： M. Ziaul Karim , Bikram Kapoor , Anchuan Wang , Dong Qing Li , Katsunari Ozeki , Manoj Vellaikal , Zhuang Li
发明人： M. Ziaul Karim , Bikram Kapoor , Anchuan Wang , Dong Qing Li , Katsunari Ozeki , Manoj Vellaikal , Zhuang Li
IPC分类号： C23C16/00
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/76837
摘要： A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.
摘要翻译：使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。第一沉积步骤期间的流动气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2 O 3。在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

8. 发明授权

US08999856B2 Methods for etch of sin films 有权
标题翻译：蚀刻薄膜的方法
公开(公告)号：US08999856B2
公开(公告)日：2015-04-07
申请号：US13416277
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

9. 发明申请

US20130034968A1 DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS 有权
标题翻译：含硅和碳膜的干燥剂
公开(公告)号：US20130034968A1
公开(公告)日：2013-02-07
申请号：US13279998
申请日：2011-10-24
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

10. 发明申请

US20100099236A1 GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS 有权
标题翻译： GAPFILL改进与低调速电介质线
公开(公告)号：US20100099236A1
公开(公告)日：2010-04-22
申请号：US12437256
申请日：2009-05-07
申请人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
发明人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
IPC分类号： H01L21/762 , H01L21/31
CPC分类号： H01L21/76224 , H01L21/02112 , H01L21/02247 , H01L21/02304 , H01L21/318
摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
摘要翻译：描述了填充沟槽的方法，并且包括在含氟蚀刻化学中沉积具有高比率的氧化硅与介电衬里蚀刻速率的介电衬垫。氧化硅沉积在沟槽内并蚀刻以重新打开或加宽沟槽顶部附近的间隙。电介质衬垫在蚀刻工艺期间保护下面的衬底，从而可以使间隙更宽。氧化硅再次沉积在沟槽内以基本上填充沟槽。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式