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    • 1. 发明授权
    • Semiconductor memory device including memory cell array having dynamic memory cell, and sense amplifier thereof
    • 包括具有动态存储单元的存储单元阵列及其读出放大器的半导体存储器件
    • US07889564B2
    • 2011-02-15
    • US12461746
    • 2009-08-24
    • Han-Sung JooJae-Wook Lee
    • Han-Sung JooJae-Wook Lee
    • G11C16/06
    • G11C11/406G11C11/4091G11C2211/4016
    • A semiconductor memory device and a sense amplifier thereof are provided. The semiconductor memory device includes a memory cell array and a plurality of sense amplifiers. The memory cell array includes a memory cell array block having a plurality of memory cells. Each of the plurality of sense amplifiers is configured to apply, based on a restore signal, a first voltage to a corresponding bit line to restore a first data value in a selected memory cell of the plurality of memory cells if a read value in the selected memory cell is the first data value and apply a second voltage based on the restore signal to the corresponding bit line to prevent a second data value from being restored in the selected memory cell if the read value in the selected memory cell is the second data value.
    • 提供半导体存储器件及其读出放大器。 半导体存储器件包括存储单元阵列和多个读出放大器。 存储单元阵列包括具有多个存储单元的存储单元阵列块。 多个读出放大器中的每一个被配置为基于恢复信号将第一电压应用于对应的位线,以便在所选择的多个存储器单元中的读取值中恢复所选择的多个存储单元的选定存储单元中的第一数据值 存储器单元是第一数据值,并且基于还原信号将第二电压施加到相应的位线,以防止所选择的存储器单元中的读取值是第二数据值时在所选存储单元中恢复第二数据值 。
    • 2. 发明申请
    • Semiconductor memory device including memory cell array having dynamic memory cell, and sense amplifier thereof
    • 包括具有动态存储单元的存储单元阵列及其读出放大器的半导体存储器件
    • US20100046310A1
    • 2010-02-25
    • US12461746
    • 2009-08-24
    • Han-Sung JooJae-Wook Lee
    • Han-Sung JooJae-Wook Lee
    • G11C7/00G11C7/02
    • G11C11/406G11C11/4091G11C2211/4016
    • A semiconductor memory device and a sense amplifier thereof are provided. The semiconductor memory device includes a memory cell array and a plurality of sense amplifiers. The memory cell array includes a memory cell array block having a plurality of memory cells. Each of the plurality of sense amplifiers is configured to apply, based on a restore signal, a first voltage to a corresponding bit line to restore a first data value in a selected memory cell of the plurality of memory cells if a read value in the selected memory cell is the first data value and apply a second voltage based on the restore signal to the corresponding bit line to prevent a second data value from being restored in the selected memory cell if the read value in the selected memory cell is the second data value.
    • 提供半导体存储器件及其读出放大器。 半导体存储器件包括存储单元阵列和多个读出放大器。 存储单元阵列包括具有多个存储单元的存储单元阵列块。 多个读出放大器中的每一个被配置为基于恢复信号将第一电压应用于对应的位线,以便在所选择的多个存储器单元中的读取值中恢复所选择的多个存储单元的选定存储单元中的第一数据值 存储器单元是第一数据值,并且基于还原信号将第二电压施加到相应的位线,以防止所选择的存储器单元中的读取值是第二数据值时在所选存储单元中恢复第二数据值 。
    • 7. 发明授权
    • Color selection apparatus including frame supporting tension mask for cathode ray tube
    • 颜色选择装置,包括用于阴极射线管的支撑张力罩的框架
    • US06930444B2
    • 2005-08-16
    • US10422586
    • 2003-04-25
    • Jae-Wook LeeSu-Jong LeeSang-Bong ParkMyung-Sup Seo
    • Jae-Wook LeeSu-Jong LeeSang-Bong ParkMyung-Sup Seo
    • H01J29/02H01J29/07H01J29/80
    • H01J29/07H01J2229/0722
    • A color selection apparatus for a cathode ray tube includes a tension mask including a plurality of electron beam passage apertures; and a frame including a pair of support members provided along opposite sides of the tension mask and applying a tensile force to the mask, and a pair of elastic members extending from one support member to the other at ends of the same, the elastic members maintaining a predetermined distance between the support members. Each of the elastic members is hollow and includes a base that is substantially parallel to the tension mask, with extensions formed substantially perpendicular to the base at both ends thereof, and bending portions integrally formed between the base and the extensions. Reinforcing elements are formed in proximity to the bending portions to increase the strength of the elastic members in the area of the bending portions.
    • 一种用于阴极射线管的选色装置,包括:一个包括多个电子束通过孔的张力掩模; 以及框架,其包括沿张力掩模的相对侧设置的一对支撑构件,并且向该掩模施加拉力;以及一对弹性构件,其在一端的一端从一个支撑构件延伸到另一个,弹性构件保持 在支撑构件之间的预定距离。 每个弹性构件是中空的并且包括基本上平行于张力掩模的基部,其延伸部在其两端基本上垂直于基部形成,并且弯曲部分一体地形成在基部和延伸部之间。 在弯曲部附近形成有增强元件,以增加弹性部件在弯曲部的区域的强度。