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    • 4. 发明授权
    • Optical apparatus using wavelength selective photocoupler
    • 使用波长选择光电耦合器的光学设备
    • US5220573A
    • 1993-06-15
    • US795966
    • 1991-11-21
    • Hajime SakataHidetoshi Nojiri
    • Hajime SakataHidetoshi Nojiri
    • H01S5/00H01S5/026H01S5/125H01S5/16H01S5/22
    • H01S5/026G02B6/124G02B6/125H01S5/0064H01S5/125H01S5/164H01S5/22
    • The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating. A photosensor which is one of the optical apparatus according to the present invention comprises a substrate, a first waveguide layer formed on the substrate, a second waveguide layer formed on the first waveguide layer to be stacked in a direction of thickness and which has a guided mode difference from that of the first waveguide layer, a diffraction grating formed on an overlapping region of the guided modes of the first and second waveguide layers and which couples light components of a specific wavelength range of light propagating through the first waveguide layer to the second waveguide layer, a light absorption layer for absorbing at least some light components of the light components coupled to the second waveguide layer, and an electrode for converting the light components absorbed by the light absorption layer into an electrical signal and outputting the electrical signal.
    • 本发明涉及光传感器,半导体激光器,光放大器等光学装置,其中使用波长选择性光电耦合器,以便通过衍射光栅耦合两个波导。 作为本发明的光学装置之一的光电传感器包括基板,形成在基板上的第一波导层,形成在第一波导层上的第二波导层,以沿厚度方向堆叠并且具有引导 与第一波导层的模式差异,形成在第一和第二波导层的引导模式的重叠区域上并且将通过第一波导层传播的特定波长范围的光分量耦合到第二波导层的第二 波导层,用于吸收耦合到第二波导层的光分量的至少一些光分量的光吸收层,以及用于将由光吸收层吸收的光分量转换成电信号并输出​​电信号的电极。
    • 5. 发明授权
    • Optical apparatus using wavelength selective photocoupler
    • 使用波长选择光电耦合器的光学设备
    • US5140149A
    • 1992-08-18
    • US796929
    • 1991-11-22
    • Hajime SakataHidetoshi Nojiri
    • Hajime SakataHidetoshi Nojiri
    • G02B6/124G02B6/34G02B6/42H01L27/15H01S3/00H01S5/026H01S5/042H01S5/10H01S5/50
    • H01S5/5045G02B6/124G02B6/42H01L27/15H01S3/0064H01S5/1032G02B6/29323H01S5/0264H01S5/0425H01S5/1035
    • The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating.A photosensor which is one of the optical apparatus according to the present invention comprises a substrate, a first waveguide layer formed on the substrate, a second waveguide layer formed on the first waveguide layer to be stacked in a direction of thickness and which has a guided mode difference from that of the first waveguide layer, a diffraction grating formed on an overlapping region of the guided modes of the first and second waveguide layers and which couples light components of a specific wavelength range of light propagating through the first waveguide layer to the second waveguide layer, a light absorption layer for absorbing at least some light components of the light components coupled to the second waveguide layer, and an electrode for converting the light components absorbed by the light absorption layer into an electrical signal and outputting the electrical signal.
    • 本发明涉及光传感器,半导体激光器,光放大器等光学装置,其中使用波长选择性光电耦合器,以便通过衍射光栅耦合两个波导。 作为本发明的光学装置之一的光电传感器包括基板,形成在基板上的第一波导层,形成在第一波导层上的第二波导层,以沿厚度方向堆叠并且具有引导 与第一波导层的模式差异,形成在第一和第二波导层的引导模式的重叠区域上并且将通过第一波导层传播的特定波长范围的光分量耦合到第二波导层的第二 波导层,用于吸收耦合到第二波导层的光分量的至少一些光分量的光吸收层,以及用于将由光吸收层吸收的光分量转换成电信号并输出​​电信号的电极。
    • 6. 发明申请
    • MEMORY DEVICE WITH TEST MECHANISM
    • 具有测试机制的存储器件
    • US20110116332A1
    • 2011-05-19
    • US12618827
    • 2009-11-16
    • TOMOMI NAKAHajime Sakata
    • TOMOMI NAKAHajime Sakata
    • G11C29/00
    • G11C29/50G11C29/12005G11C2029/5006
    • A semiconductor memory device includes a plurality of memory cell transistors arranged in a matrix and each configured to store data, and a test circuit configured to output to outside the semiconductor memory device an output signal indicative of an amount of test current flowing through a selected one of the plurality of memory cell transistors, wherein the test circuit includes a plurality of reference cell transistors employed to successively produce varying amounts of currents, a comparison circuit configured to successively compare the amount of test current with each of the varying amounts of currents, and a code generating circuit configured to generate a code indicative of a result of the successive comparisons performed by the comparison circuit, wherein the code is output as the output signal.
    • 半导体存储器件包括以矩阵形式布置并分别被配置为存储数据的多个存储单元晶体管,以及测试电路,被配置为向半导体存储器件外部输出指示流过所选择的测试电流量的输出信号 所述多个存储单元晶体管中的所述测试电路包括用于连续产生不同数量电流的多个参考单元晶体管;比较电路,被配置为连续地将所述测试电流的量与所述不同量的电流中的每一个进行比较;以及 代码生成电路,被配置为生成表示由所述比较电路执行的连续比较的结果的代码,其中所述代码被输出作为所述输出信号。
    • 7. 发明申请
    • Control method of distributed Bragg reflection semiconductor laser, and image projecting apparatus
    • 分布式布拉格反射半导体激光器的控制方法和图像投影装置
    • US20080002745A1
    • 2008-01-03
    • US11896142
    • 2007-08-30
    • Kazunari FujiiHajime SakataYukio Furukawa
    • Kazunari FujiiHajime SakataYukio Furukawa
    • H01S5/06
    • H04N9/3129H01S5/005H01S5/0092H01S5/06256H01S5/06804
    • A distributed Bragg reflection (DBR) semiconductor laser is controlled in an image projecting apparatus. The image projecting apparatus includes the DBR semiconductor laser which is provided with a phase region and a DBR region, a light wavelength converting device for converting fundamental-wave light emitted from the DBR semiconductor laser into second harmonic wave light, an optical deflector for scanning the second harmonic wave in a one-dimensional or two-dimensional manner, and a modulating portion for modulating the DBR semiconductor laser based on an image signal. In the control method, a coefficient calculating step and a wavelength adjusting step are performed within a non-drawing time during which a drawing signal, which corresponds to the image signal, is absent. In the coefficient calculating step, at least one coefficient in a relationship between a DBR current to be injected into the DBR region and a phase current to be injected into the phase region for continuously shifting the wavelength of the fundamental-wave light is calculated. In the wavelength adjusting step, the DBR current injected into the DBR region and the phase current injected into the phase region are changed based on the relationship such that the second harmonic wave light is adjusted.
    • 在图像投影装置中控制分布式布拉格反射(DBR)半导体激光器。 图像投影装置包括具有相位区域和DBR区域的DBR半导体激光器,用于将从DBR半导体激光器发射的基波光转换为二次谐波光的光波长转换装置,用于扫描 一维或二维二次谐波,以及用于基于图像信号调制DBR半导体激光器的调制部分。 在控制方法中,系数计算步骤和波长调整步骤在不存在对应于图像信号的绘制信号的非绘制时间内执行。 在系数计算步骤中,计算要注入到DBR区域的DBR电流和要注入到用于连续移位基波的波长的相位区域的相电流之间的关系中的至少一个系数。 在波长调整步骤中,根据调整二次谐波光的关系,改变注入DBR区域的DBR电流和注入相位区域的相电流。
    • 8. 发明授权
    • Semiconductor laser element capable of changing emission wavelength, and
method of driving the same
    • 能够改变发射波长的半导体激光元件及其驱动方法
    • US5155736A
    • 1992-10-13
    • US790832
    • 1991-11-14
    • Takeo OnoHajime Sakata
    • Takeo OnoHajime Sakata
    • H01S5/0625H01S5/34H01S5/50
    • B82Y20/00H01S5/06255H01S5/34H01S5/06256H01S5/06258H01S5/5045
    • A semiconductor laser element capable of changing an oscillation wavelength over a wide range without increasing a threshold current is disclosed. A wavelength selective filter capable of changing a selected wavelength over a wide range is also disclosed. The semiconductor laser element has a substrate and a laser resonator formed on the substrate by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure. The resonator includes a first reflection portion, an active portion, a phase adjustment portion and second reflection portion which are juxtaposed in a resonance direction. Diffraction gratings are formed in the optical guide layer of the first and second reflection portions. Electrodes are independently formed in the active portion, the phase adjustment portion and the first and second reflection portions. Further, a method for driving the semiconductor laser is disclosed.
    • 公开了能够在不增加阈值电流的情况下在宽范围内改变振荡波长的半导体激光元件。 还公开了能够在宽范围内改变选定波长的波长选择滤波器。 半导体激光元件具有通过层叠包括有源层和超晶格结构的光波导层的半导体层而形成在基板上的基板和激光谐振器。 谐振器包括在谐振方向上并列的第一反射部分,有源部分,相位调整部分和第二反射部分。 衍射光栅形成在第一和第二反射部分的光导层中。 电极独立地形成在有源部分,相位调整部分和第一和第二反射部分中。 此外,公开了一种用于驱动半导体激光器的方法。