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1. 发明授权

US08198673B2 Asymmetric epitaxy and application thereof 有权
标题翻译：不对称外延及其应用
公开(公告)号：US08198673B2
公开(公告)日：2012-06-12
申请号：US13080702
申请日：2011-04-06
申请人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
发明人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
IPC分类号： H01L21/00
CPC分类号： H01L21/26586 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.
摘要翻译：本发明提供了形成非对称场效应晶体管的方法。该方法包括在半导体衬底的顶部上形成栅极结构，该栅极结构包括一个栅极叠层和邻近该栅极叠层的侧壁的间隔物，并具有与第一侧相对的第一侧和第二侧; 从衬底中的栅极结构的第一侧进行成角度的离子注入，从而形成与第一侧相邻的离子注入区域，其中栅极结构防止成角度的离子注入到达邻近第二侧的衬底门结构; 以及在栅极结构的第一和第二侧在衬底上进行外延生长。结果，在离子注入区域上的外延生长比经历无离子注入的区域慢得多。通过外延生长形成到栅极结构的第二侧的源极区域的高度高于通过外延生长形成于栅极结构的第一侧的漏极区域的高度。还提供了由此形成的半导体结构。

2. 发明申请

US20110171788A1 Fabrication of Field Effect Devices Using Spacers 失效
标题翻译：使用Spacers制造场效应器件
公开(公告)号：US20110171788A1
公开(公告)日：2011-07-14
申请号：US12684997
申请日：2010-01-11
申请人： Kevin K. Chan , Zhibin Ren , Xinhui Wang , Haizhou Yin
发明人： Kevin K. Chan , Zhibin Ren , Xinhui Wang , Haizhou Yin
IPC分类号： H01L21/336
CPC分类号： H01L29/66628 , H01L29/665 , H01L29/6656 , H01L29/66772
摘要： A method for forming a field effect device includes forming a gate portion on a silicon-on-insulator layer (SOI), forming first spacer members on the SOI layer adjacent to the gate portion, depositing a layer of spacer material on the SOI layer, the first spacer members, and the gate portion, removing portions of the layer of spacer material to form second spacer members on the SOI layer adjacent to the first spacer members, forming a source region and a drain region on the SOI layer by implanting ions in the SOI layer, and etching to remove the second spacer members.
摘要翻译：一种形成场效应器件的方法包括在绝缘体上硅层（SOI）上形成栅极部分，在邻近栅极部分的SOI层上形成第一间隔元件，在SOI层上沉积间隔物材料层，第一隔离构件和栅极部分，去除间隔物材料层的部分，以在与第一间隔件相邻的SOI层上形成第二间隔件，通过将离子注入到SOI层上形成源极区域和漏极区域 SOI层，并蚀刻以除去第二间隔件。

3. 发明授权

US08410544B2 finFETs and methods of making same 有权
标题翻译： finFET及其制造方法
公开(公告)号：US08410544B2
公开(公告)日：2013-04-02
申请号：US13228519
申请日：2011-09-09
申请人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
发明人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
IPC分类号： H01L29/66
CPC分类号： H01L29/66795 , H01L29/785
摘要： A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.
摘要翻译：一种合并多鳍鳍鳍鳍片的制造方法和结构。该方法包括从具有非常薄的掩埋氧化物层的SOI衬底的硅层形成单晶硅散热片，并通过从衬底生长垂直外延硅并从散热片的端部生成水平外延硅，从而将翅片的端部区域合并垂直外延硅生长占优势。

4. 发明申请

US20110316081A1 finFETS AND METHODS OF MAKING SAME 有权
标题翻译：鳍片及其制造方法
公开(公告)号：US20110316081A1
公开(公告)日：2011-12-29
申请号：US13228519
申请日：2011-09-09
申请人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
发明人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
IPC分类号： H01L27/12
CPC分类号： H01L29/66795 , H01L29/785
摘要： A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.
摘要翻译：一种合并多鳍鳍鳍鳍片的制造方法和结构。该方法包括从具有非常薄的掩埋氧化物层的SOI衬底的硅层形成单晶硅散热片，并通过从衬底生长垂直外延硅并从散热片的端部生成水平外延硅，从而将翅片的端部区域合并垂直外延硅生长占优势。

5. 发明申请

US20110108918A1 ASYMMETRIC EPITAXY AND APPLICATION THEREOF 有权
标题翻译：不对称外延及其应用
公开(公告)号：US20110108918A1
公开(公告)日：2011-05-12
申请号：US12614699
申请日：2009-11-09
申请人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
发明人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/26586 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.
摘要翻译：本发明提供了形成非对称场效应晶体管的方法。该方法包括在半导体衬底的顶部上形成栅极结构，该栅极结构包括一个栅极叠层和邻近该栅极叠层的侧壁的间隔物，并具有与第一侧相对的第一侧和第二侧; 从衬底中的栅极结构的第一侧进行成角度的离子注入，从而形成与第一侧相邻的离子注入区域，其中栅极结构防止成角度的离子注入到达邻近第二侧的衬底门结构; 以及在栅极结构的第一和第二侧在衬底上进行外延生长。结果，在离子注入区域上的外延生长比经历无离子注入的区域慢得多。通过外延生长形成到栅极结构的第二侧的源极区域的高度高于通过外延生长形成于栅极结构的第一侧的漏极区域的高度。还提供了由此形成的半导体结构。

6. 发明授权

US08765532B2 Fabrication of field effect devices using spacers 失效
标题翻译：使用间隔物制造场效应器件
公开(公告)号：US08765532B2
公开(公告)日：2014-07-01
申请号：US12684997
申请日：2010-01-11
申请人： Kevin K. Chan , Zhibin Ren , Xinhui Wang , Haizhou Yin
发明人： Kevin K. Chan , Zhibin Ren , Xinhui Wang , Haizhou Yin
IPC分类号： H01L21/00
CPC分类号： H01L29/66628 , H01L29/665 , H01L29/6656 , H01L29/66772
摘要： A method for forming a field effect device includes forming a gate portion on a silicon-on-insulator layer (SOI), forming first spacer members on the SOI layer adjacent to the gate portion, depositing a layer of spacer material on the SOI layer, the first spacer members, and the gate portion, removing portions of the layer of spacer material to form second spacer members on the SOI layer adjacent to the first spacer members, forming a source region and a drain region on the SOI layer by implanting ions in the SOI layer, and etching to remove the second spacer members.
摘要翻译：一种形成场效应器件的方法包括在绝缘体上硅层（SOI）上形成栅极部分，在邻近栅极部分的SOI层上形成第一间隔元件，在SOI层上沉积间隔物材料层，第一隔离构件和栅极部分，去除间隔物材料层的部分，以在与第一间隔件相邻的SOI层上形成第二间隔件，通过将离子注入到SOI层上形成源极区域和漏极区域 SOI层，并蚀刻以除去第二间隔件。

7. 发明授权

US08043920B2 finFETS and methods of making same 有权
标题翻译： finFETs及其制作方法
公开(公告)号：US08043920B2
公开(公告)日：2011-10-25
申请号：US12561606
申请日：2009-09-17
申请人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
发明人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
IPC分类号： H01L21/00
CPC分类号： H01L29/66795 , H01L29/785
摘要： A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.
摘要翻译：一种合并多鳍鳍鳍鳍片的制造方法和结构。该方法包括从具有非常薄的掩埋氧化物层的SOI衬底的硅层形成单晶硅散热片，并通过从衬底生长垂直外延硅并从散热片的端部生成水平外延硅，从而将翅片的端部区域合并垂直外延硅生长占优势。

8. 发明授权

US07989297B2 Asymmetric epitaxy and application thereof 有权
标题翻译：不对称外延及其应用
公开(公告)号：US07989297B2
公开(公告)日：2011-08-02
申请号：US12614699
申请日：2009-11-09
申请人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
发明人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
IPC分类号： H01L21/00
CPC分类号： H01L21/26586 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.
摘要翻译：本发明提供了形成非对称场效应晶体管的方法。所述方法包括在半导体衬底的顶部上形成栅极结构，所述栅极结构包括栅极叠层和邻近所述栅极堆叠的侧壁的间隔物，并且具有与所述第一侧相对的第一侧和第二侧; 从衬底中的栅极结构的第一侧进行成角度的离子注入，从而形成与第一侧相邻的离子注入区域，其中栅极结构防止成角度的离子注入到达邻近第二侧的衬底门结构; 以及在栅极结构的第一和第二侧在衬底上进行外延生长。结果，在离子注入区域上的外延生长比经历无离子注入的区域慢得多。通过外延生长形成到栅极结构的第二侧的源极区域的高度高于通过外延生长形成于栅极结构的第一侧的漏极区域的高度。还提供了由此形成的半导体结构。

9. 发明申请

US20110180872A1 ASYMMETRIC EPITAXY AND APPLICATION THEREOF 有权
公开(公告)号：US20110180872A1
公开(公告)日：2011-07-28
申请号：US13080702
申请日：2011-04-06
申请人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
发明人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
IPC分类号： H01L29/772
CPC分类号： H01L21/26586 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.

10. 发明申请

US20110062518A1 finFETS AND METHODS OF MAKING SAME 有权
公开(公告)号：US20110062518A1
公开(公告)日：2011-03-17
申请号：US12561606
申请日：2009-09-17
申请人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
发明人： Kevin K. Chan , Thomas Safron Kanarsky , Jinghong Li , Christine Qiqing Ouyang , Dae-Gyu Park , Zhibin Ren , Xinhui Wang , Haizhou Yin
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66795 , H01L29/785
摘要： A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.

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