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    • 2. 发明专利
    • Magnetic head assembly
    • 磁头组件
    • JPH11273289A
    • 1999-10-08
    • JP6972198
    • 1998-03-19
    • Hitachi Ltd株式会社日立製作所
    • HASHIMOTO KAZUEMITA TORUSHIRAKAWA MASANORISEKIGUCHI KOICHIROUMAGOE YUKIMORIYAMAZAKI MUNEYUKI
    • G11B5/49G11B21/21
    • PROBLEM TO BE SOLVED: To keep parallelism between a slider and a gimbal spring and to obtain high adhesive strength while preventing an adhesive from entering a terminal part by forming a terminal pattern, an adhesive entering protection means, a slider warp protection means and a flatness securement means in the same manufacturing process and setting a wiring pattern structure of a gimbal part of a suspension tip in the same height.
      SOLUTION: The wiring pattern 35 structure in the gimbal spring 33 is provided with the terminal pattern 1, an adhesive entering protection pattern 2, a slider warp protection pattern 3 and a flatness securing pattern 4. At this time, respective pattern heights are arranged by manufacturing respective patterns 1-4 in the same manufacturing process. Thus, the parallelism between the slider (alternate long and short dash line part) and the gimbal spring 33 is secured, and the contraction of the adhesive 34 is uniformized, and the warp in the slider is eliminated by prescribing adhesive thickness with a plane formed by respective patterns 1-4, and stable floating is obtained.
      COPYRIGHT: (C)1999,JPO
    • 要解决的问题:为了保持滑块和万向弹簧之间的平行度,并且通过形成端子图案防止粘合剂进入端子部分,获得高粘合强度,粘合剂进入保护装置,滑块翘曲保护装置和平坦度 固定装置在相同的制造过程中,并且将悬架尖端的万向节部分的布线图案结构设置在同一高度。 解决方案:万向弹簧33中的布线图案35的结构设置有端子图案1,粘合剂进入保护图案2,滑块翘曲保护图案3和平坦度固定图案4.此时,各图案高度通过 在相同的制造过程中制造相应的图案1-4。 因此,固定滑块(交替的长短虚线部分)和万向弹簧33之间的平行度,并且粘合剂34的收缩是均匀的,并且通过用形成的平面规定粘合剂厚度来消除滑块中的翘曲 通过各自的图案1-4,获得稳定的浮动。
    • 6. 发明专利
    • METHOD AND DEVICE FOR END POINT DETECTION
    • JPS6293943A
    • 1987-04-30
    • JP23323285
    • 1985-10-21
    • HITACHI LTD
    • KAMIOKA TETSUYAOKABE TSUTOMUMAEJIMA HIROSHIWAKIYAMA FUMITOSHISEKIGUCHI KOICHIROHANAJIMA SHUICHI
    • H01L21/302H01L21/3065
    • PURPOSE:To improve the accuracy for detecting an end point of etching by a method wherein, when dry etching is performed on a thin film formed on the surface of a semiconductor wafer to form a prescribed pattern, different wavelengths of emission spectrums emitted from the thin film are combined and the peak position of this differential waveform is regarded as the end point of etching. CONSTITUTION:A parallel plate electrode 7 consisting of a lower electrode 5 whereon a semiconductor wafer 4 is placed and an upper electrode 6 is arranged over a substrate part 1 of a plasma etching device having an exhaust tube 9 and this electrode 7 is covered with a bell-jar 2 made of transparent quartz. Moreover, the electrode 5 is earthed, the electrode 6 is connected to an external high-frequency power source 8 and gas is fed in a treating chamber 3 in the interior of the bell-jar 2 from a reaction gas control mechanism 10 through a supply pipe 11. Thereafter, the gas is activated with plasma 12 generated, lights emitted from a thin film formed on the semiconductor wafer surface are processed in a combination circuit part 17 through BPFs 14a and 14b, photo diodes 13a and 13b, amplifying parts 15a and 15b and A/D converters 16a and 16b outside the bell-jar 2. Then, a differential calculation is executed in a decision part 18 and the power source 8 is stopped using the peak of the waveform.