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    • 1. 发明申请
    • NANOWIRE HETEROSTRUCTURES
    • WO2006132659A3
    • 2007-07-05
    • PCT/US2005034345
    • 2005-09-21
    • HARVARD COLLEGELU WEIXIANG JIETIMKO BRIAN PWU YUEYAN HAOLIEBER CHARLES M
    • LU WEIXIANG JIETIMKO BRIAN PWU YUEYAN HAOLIEBER CHARLES M
    • H01L29/06
    • B82Y10/00G11C2213/17G11C2213/18H01L29/0665H01L29/0673H01L29/068H01L29/1606H01L29/165
    • The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and/or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invention provides a solid nanowire having a core and a shell, both of which are essentially undoped. For example, in one embodiment, the core may consist essentially of undoped germanium and the shell may consist essentially of undoped silicon. Carriers are injected into the nanowire, which can be ballistically transported through the nanowire. In other embodiments, however, the invention is not limited to solid nanowires, and other configurations, involving other nanoscale wires, are also contemplated within the scope of the present invention. Yet another aspect of the invention provides a junction between a metal and a nanoscale wire that exhibit no or reduced Schottky barriers. As a non-limiting example, a nanoscale wire having a core and a shell may be in physical contact with a metal electrode, such that the Schottky barrier to the core is reduced or eliminated. Still other aspects of the invention are directed to electronic devices exhibiting such properties, and techniques for methods of making or using such devices.
    • 本发明一般涉及纳米尺度异质结构,在某些情况下涉及显示弹道输运的纳米线异质结构,和/或涉及没有或减少的肖特基势垒的金属 - 半导体结。 本发明的一个方面提供了具有核和壳的固体纳米线,两者都基本上是未掺杂的。 例如,在一个实施例中,芯可以基本上由未掺杂的锗组成,并且壳可以基本上由未掺杂的硅组成。 载体被注入纳米线,可以通过纳米线进行弹道传输。 然而,在其它实施方案中,本发明不限于固体纳米线,并且涉及其它纳米级线的其它构型也在本发明的范围内。 本发明的另一方面提供了金属和纳米尺寸线之间的连接处,其不显示或减小肖特基势垒。 作为非限制性实例,具有芯和壳的纳米线可以与金属电极物理接触,使得芯的肖特基势垒被减少或消除。 本发明的其它方面涉及具有这种性质的电子设备,以及制造或使用这些设备的方法的技术。
    • 2. 发明申请
    • NANOSCALE WIRE-BASED DATA STORAGE
    • 基于NANOSCALE WIRE的数据存储
    • WO2007044034A3
    • 2007-09-13
    • PCT/US2005044212
    • 2005-12-06
    • HARVARD COLLEGELIEBER CHARLES MWU YUEYAN HAO
    • LIEBER CHARLES MWU YUEYAN HAO
    • G11C11/22H01L29/78
    • H01L29/0665B82Y10/00B82Y30/00G11C11/22G11C11/223G11C11/54G11C11/56G11C11/5657G11C13/003G11C13/025G11C2213/16G11C2213/17G11C2213/18G11C2213/75G11C2213/77H01L29/0673H01L29/068H01L29/78391
    • The present invention generally relates to nanotechnology and sub­microelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electrically­polarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO 3 , lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electrically­polarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electrically­polarizable shell.
    • 本发明一般涉及纳米技术和亚微米电子器件,其可用于电路中,并且在一些情况下可用于能够对数据进行编码的纳米线和其他纳米结构。 本发明的一个方面提供了具有可电极化的区域的纳米级线或其它纳米结构,例如,纳米线可以包括芯和电可极化的壳。 在一些情况下,电极化区域能够在没有外部电场的情况下保持其极化状态。 可电极化区域的全部或仅一部分可以被极化,例如编码一个或多个数据位。 在一组实施方案中,电极化区域包括功能性氧化物或铁电氧化物材料,例如BaTiO 3,钛酸铅锆等。 在一些实施例中,纳米线(或其他纳米结构)可以进一步包括其它材料,例如将电极化区域与纳米尺度线的其它区域分开的分离区域。 例如,在纳米尺度的线中,一个或多个中间壳可以将芯与电极化的壳分开。
    • 4. 发明专利
    • A micro piezoelectric axial flow fan
    • AU2021104830A4
    • 2022-05-26
    • AU2021104830
    • 2021-08-02
    • UNIV JILINLIU YANBOWU YUEZHOU LIMING
    • LIU YANBOZHOU LIMINGWU YUE
    • F04B43/04F04D25/06
    • A micro piezoelectric axial flow fan has a piezoelectric vibrator (1) and a base (2). The base (2), a rectangular block with a smaller thickness, has a piezoelectric vibrator mounting slot (21) arranged on the top surface of the rectangular block, which can install the piezoelectric vibrator (1); The piezoelectric vibrator mounting slot (21) has a cavity slot (22) in the centre of the bottom which can form a sealed cavity (3) with the piezoelectric vibrator (1) after installation; The cavity slot (22)has a flow hole (23) at the centre position of the bottom which can connect the cavity (3) to the external air; The base (2) has the first rectangular hole (24) and the second rectangular hole (25) in two vertical directions on the side. The two rectangular holes are interconnected and connected with the flow hole (23). In this way, the flow hole (23) is divided into two parts: internal flow hole (231) and external flow hole (232). When working, the piezoelectric vibrator (1) occurs reciprocating bending vibration, the volume of the cavity (3) increases and decreases, the fluid flows in and out through the flow hole (23), and the gas is inhaled from the rectangular hole (24) (25) and discharged from the external flow hole (232). It has the characteristics of small volume and simple structure.
    • 9. 发明申请
    • DYNAMIC BIASING OF A VCO IN A PHASE-LOCKED LOOP
    • 在锁相环中的VCO的动态偏移
    • WO2009055622A2
    • 2009-04-30
    • PCT/US2008081033
    • 2008-10-23
    • QUALCOMM INCSUN BOSAHOTA GURKANWAL SINGHWU YUE
    • SUN BOSAHOTA GURKANWAL SINGHWU YUE
    • H03L7/10H03L7/08H03L7/093H03L7/107
    • H03L7/197H03J7/065H03L1/00H03L7/0802H03L7/0898H03L7/093H03L7/107H03L2207/06
    • A local oscillator includes a phase-locked loop. The phase-locked loop includes voltage controlled oscillator (VCO) and a novel VCO control circuit. The VCO control circuit may be programmable and configurable. In one example, an instruction is received onto the VCO control circuit to change the power state of the VCO. The instruction is issued by other circuitry in response to a detected change in RF channel conditions (for example, a change in a signal-to-noise determination) in a cellular telephone. In response, the VCO control circuit outputs control signals that gradually widen the loop bandwidth of the PLL, then gradually change the VCO bias current to change the VCO power state, and then narrow the loop bandwidth of the PLL back to its original bandwidth. The entire process of widening the PLL bandwidth, changing the VCO power state, and narrowing the PLL bandwidth occurs while the PLL remains locked.
    • 本地振荡器包括锁相环。 锁相环包括压控振荡器(VCO)和新型VCO控制电路。 VCO控制电路可以是可编程和可配置的。 在一个示例中,在VCO控制电路上接收指令以改变VCO的功率状态。 响应于在蜂窝电话中的RF信道条件(例如,信噪比确定的改变)检测到的变化,由其它电路发出指令。 作为响应,VCO控制电路输出逐渐拓宽PLL环路带宽的控制信号,然后逐渐改变VCO偏置电流,改变VCO功率状态,然后将PLL的环路带宽缩小回原来的带宽。 当PLL保持锁定时,会发生整个PLL带宽扩大,改变VCO功率状态和缩小PLL带宽的过程。