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    • 3. 发明专利
    • Thin film gas sensor
    • 薄膜气体传感器
    • JP2006258422A
    • 2006-09-28
    • JP2005072124
    • 2005-03-15
    • Fuji Electric Fa Components & Systems Co LtdOsaka Gas Co Ltd大阪瓦斯株式会社富士電機機器制御株式会社
    • KOBAYASHI MITSUOYOSHIDA MAKOTOOKAMURA MAKOTOSUZUKI TAKUYAKUNIHARA KENJITABATA SOICHIONISHI HISAOHIGAKI KATSUMI
    • G01N27/12
    • PROBLEM TO BE SOLVED: To provide a thin film gas sensor enhanced in response, selectivity and environmental resistance by forming voids having a larger volume than before to a first gas selective combustion layer.
      SOLUTION: The gas sensing layer 5 of the thin film gas sensor 10 includes a joint layer 5a, a sensing electrode layer 5b, a sensing layer 5c and the first gas selective combustion layer 5d in detail. The sensing layer 5c is an Sb-doped SnO
      2 layer and the first gas selective combustion layer 5d comprises a Pd supported Al
      2 O
      3 sintered material. The first gas selective combustion layer 5d among those layers is obtained by employing a layer comprising a porous material formed by sintering the sintering material containing a catalyst powder which is obtained supporting a first catalyst on a mixture composed of a small-diameter powder of alumina (Al
      2 O
      3 ) and a large-diameter powder of alumina.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:通过形成具有比以前更大体积的空隙到第一气体选择性燃烧层,提供响应性,选择性和耐环境性的薄膜气体传感器。 解决方案:薄膜气体传感器10的气体感测层5详细地包括接合层5a,感测电极层5b,感测层5c和第一气体选择性燃烧层5d。 感测层5c是Sb掺杂的SnO 2 SB层,第一气体选择性燃烧层5d包含Pd负载的Al 2 O 3 SB 3烧结 材料。 这些层中的第一气体选择性燃烧层5d通过使用包含多孔材料的层来获得,所述层通过在由氧化铝的小直径粉末组成的混合物上烧结含有催化剂粉末的烧结材料而形成,该催化剂粉末被支撑第一催化剂 和大直径的氧化铝粉末。 版权所有(C)2006,JPO&NCIPI
    • 5. 发明专利
    • Inspection method for gas leak alarm and inspection gas generator
    • 气体泄漏报警和检查气体发生器检测方法
    • JP2006053631A
    • 2006-02-23
    • JP2004233013
    • 2004-08-10
    • Fuji Electric Fa Components & Systems Co Ltd富士電機機器制御株式会社
    • YOSHIDA MAKOTOKOBAYASHI MITSUOKUNIHARA KENJISUZUKI TAKUYAOKAMURA MAKOTO
    • G08B21/16G01M3/00
    • PROBLEM TO BE SOLVED: To provide an easy and safe inspecting method for a gas leak alarm and an inspection gas supplying device suitable for it when an inspection is carried out in an installation site for the gas leak alarm.
      SOLUTION: In this inspection method for the gas leak alarm, the inspection gas is generated by a chemical reaction. The inspection gas supplying device A is constructed of a first container A1 holding water and a second container A2 holding a gas generation material G3. In the inspection gas supplying device A, a valve operable from the outside is arranged for serving as a chemical reaction quantity control means on a barrier plate between the two containers, while a pipe A9 for discharging generated gas G to the outside is arranged in the second container.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为在气体泄漏报警器的安装地点进行检查时,提供一种易于安全的气体泄漏报警检测方法和适用于其的检查气体供给装置。

      解决方案:在这种气体泄漏报警检测方法中,检测气体通过化学反应产生。 检查气体供给装置A由容纳水的第一容器A1和保持气体发生材料G3的第二容器A2构成。 在检查气体供给装置A中,从外部可操作的阀被布置成用于在两个容器之间的阻挡板上用作化学反应量控制装置,而将用于将产生的气体G排放到外部的管A9布置在 第二个容器 版权所有(C)2006,JPO&NCIPI

    • 7. 发明专利
    • Manufacturing method of thin film gas sensor
    • 薄膜气体传感器的制造方法
    • JP2007064909A
    • 2007-03-15
    • JP2005254439
    • 2005-09-02
    • Fuji Electric Fa Components & Systems Co Ltd富士電機機器制御株式会社
    • KUNIHARA KENJISUZUKI TAKUYAYOSHIDA MAKOTOOKAMURA MAKOTOKOBAYASHI MITSUO
    • G01N27/12
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film gas sensor capable of obtaining a CO sensor having a high change rate (gradient) of sensor resistance to a gas concentration, and having excellent output linearity within at least a CO detection concentration range (30 to 500 ppm CO/air).
      SOLUTION: In this thin film gas sensor, at least a thin-film heater H is formed on an insulation support thin film L on one face of an Si substrate B, the thin-film heater is coated with an insulation film L4 such as SiO
      2 , a gas-detecting electrode E for a gas sensitive film is formed thereon, and a gas sensing film S comprising SnO
      2 as a main component is formed further. In the thin film gas sensor, a process for forming the gas sensitive film is carried out by executing alternately an SnO
      2 film forming process by spattering and an etching process by reverse spattering.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 解决问题的方案:提供一种薄膜气体传感器的制造方法,其能够获得具有高的气体浓度的传感器电阻的变化率(梯度)的CO传感器,并且在至少一个 CO检测浓度范围(CO /空气为30〜500ppm)。 解决方案:在该薄膜气体传感器中,至少在Si衬底B的一个面上的绝缘支撑薄膜L上形成薄膜加热器H,薄膜加热器涂覆绝缘膜L4 例如SiO 2 ,在其上形成用于气体敏感膜的气体检测电极E,并且进一步形成包含SnO 2 作为主要成分的气体检测膜S 。 在薄膜气体传感器中,通过溅射进行SnO< SB> 2>成膜处理和通过反溅射进行蚀刻处理来进行形成气敏膜的工艺。 版权所有(C)2007,JPO&INPIT
    • 8. 发明专利
    • Thin film gas sensor
    • 薄膜气体传感器
    • JP2007017217A
    • 2007-01-25
    • JP2005197246
    • 2005-07-06
    • Fuji Electric Fa Components & Systems Co Ltd富士電機機器制御株式会社
    • KUNIHARA KENJISUZUKI TAKUYAYOSHIDA MAKOTOOKAMURA MAKOTOKOBAYASHI MITSUO
    • G01N27/12
    • PROBLEM TO BE SOLVED: To integrate gas sensing layers for a plurality of gases into one chip.
      SOLUTION: This thin film gas sensor comprises a substrate 1 having a diaphragm section thinner than the outer periphery or an opening in a central part, a supporting layer 2 disposed on the substrate, a heater 5 disposed on the supporting layer and at a position corresponding to the central part, an electrical insulation layer 6 disposed on the heater, first and second gas sensing layers 10 and 20 where resistor values vary according to the composition of gases in the environment and that are disposed on the electrical insulation layer, at the positions corresponding to the central part, and at an interval so as to control the temperature with the heater, a first pair of electrodes 15 and 16 disposed in electric contact with the first gas sensing layer, and a second pair of electrodes 25 and 26 disposed in electric contact with the second gas sensing layer.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:将多个气体的气体感测层集成到一个芯片中。 解决方案:该薄膜气体传感器包括具有比外周更薄的隔膜部分或中心部分的开口的基板1,设置在基板上的支撑层2,设置在支撑层上的加热器5 对应于中心部分的位置,设置在加热器上的电绝缘层6,第一和第二气体感测层10和20,其中电阻值根据环境中的气体组成而变化并且设置在电绝缘层上, 在与中心部分相对应的位置处,并以间隔来控制加热器的温度,与第一气体感测层电接触设置的第一对电极15和16以及第二对电极25和 26与第二气体感测层电接触。 版权所有(C)2007,JPO&INPIT
    • 9. 发明专利
    • Gas sensor and gas leak alarm
    • 气体传感器和气体泄漏报警器
    • JP2005172551A
    • 2005-06-30
    • JP2003411423
    • 2003-12-10
    • Fuji Electric Fa Components & Systems Co Ltd富士電機機器制御株式会社
    • YOSHIDA MAKOTOSUZUKI TAKUYAKUNIHARA KENJIKOBAYASHI MITSUOOKAMURA MAKOTO
    • G01N27/12G01N27/16G08B21/16
    • PROBLEM TO BE SOLVED: To provide a gas sensor and a gas leak alarm for surely preventing the infiltration of miscellaneous gases from the exterior while simplifying gas leak inspection work.
      SOLUTION: A sensor cap 9 has an opening hole 11 for inspection in a lower side face of a miscellaneous gas filter 10. An outer tube 13 for covering the sensor cap 9 via an 0-ring like seal 20 has vertical holes comprising an inspection gas inlet port 14 downward extending from an upper surface of an outer tube 13 and a closing plug movement guide hole 19 larger than an opening diameter of the inlet port 14, and has a ring-shaped recessed groove 15a at the same level position as the opening hole 11. In the guide hole 19, a closing plug 16 normally closes the inlet port 14 by biasing force of a compression spring 17. The opening hole 11 communicates with the exterior of the gas leak alarm when the closing plug 16 is depressed by an inspection gas supply means.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供气体传感器和气体泄漏报警器,以确保防止来自外部的杂质气体的渗入,同时简化气体泄漏检查工作。 传感器盖9具有用于在各种气体过滤器10的下侧面检查的开孔11.用于通过O形环密封件20覆盖传感器盖9的外管13具有垂直孔,其包括: 从外管13的上表面向下方延伸的检查气体入口端口14和比入口端口14的开口直径大的闭塞塞移动引导孔19,并且具有位于同一位置的环状凹槽15a 作为开孔11.在导向孔19中,封闭塞16通过压缩弹簧17的作用力而正常地关闭入口14.当闭塞塞16为闭合塞时,开孔11与气体泄漏报警器的外部连通 被检查气体供应装置压低。 版权所有(C)2005,JPO&NCIPI
    • 10. 发明专利
    • Thin-film gas sensor
    • 薄膜气体传感器
    • JP2005134251A
    • 2005-05-26
    • JP2003370935
    • 2003-10-30
    • Fuji Electric Fa Components & Systems Co Ltd富士電機機器制御株式会社
    • KUNIHARA KENJISUZUKI TAKUYAYOSHIDA MAKOTOKOBAYASHI MITSUO
    • G01N27/12G01N27/16
    • PROBLEM TO BE SOLVED: To improve hydrogen selectivity of a thin-film gas sensor having a guaranteed life lime of 5 years or longer, without battery replacement.
      SOLUTION: A sensing layer 7 of the thin film gas sensor comprises a three-layer structure provided with a first layer 9 as a SnO
      2 layer having a positive pentavalent or hexavalent element which is to become a donor, such as Sb, a second layer 10 as a SnO
      2 layer formed on the first layer and having a doped noble metal catalyst of 1 at% or higher and lower than 20 at%, such as Pt, and a third layer 11 as a SnO
      2 layer having the doped noble metal catalyst of 20 at% or higher, such as Pt, and adequately obtains high hydrogen selectivity.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了提高具有5年或更长寿命的寿命的薄膜气体传感器的氢选择性,无需更换电池。 解决方案:薄膜气体传感器的感测层7包括三层结构,其具有第一层9作为具有正五价或六价元素的SnO 2 层,其将成为 诸如Sb的供体,形成在第一层上的具有1at%或更高且低于20at%的掺杂贵金属催化剂的第二层10作为SnO 2 SBS 2层,例如 Pt和作为具有20at%以上的掺杂贵金属催化剂的SnO 2 SBS 2层的第三层11,例如Pt,并且充分获得高氢选择性。 版权所有(C)2005,JPO&NCIPI