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    • 5. 发明申请
    • FUSING DEVICE AND IMAGE FORMING APPARATUS HAVING THE SAME
    • 熔接装置和具有该装置的图像形成装置
    • US20090092423A1
    • 2009-04-09
    • US12036514
    • 2008-02-25
    • Su-ho SHINDong-woo LeeTae-gyu KimChang-hoon JungTae-hoon KimHwan-hee Kim
    • Su-ho SHINDong-woo LeeTae-gyu KimChang-hoon JungTae-hoon KimHwan-hee Kim
    • G03G15/20
    • G03G15/2064G03G2215/2035
    • A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.
    • 定影装置包括可旋转的加压辊,通过从可旋转的加压辊传递的旋转力而旋转的定影带,夹持形成构件,其与定影带的内表面接触,以在可旋转的压制 辊和定影带,形成在定影带的大致中心部分的加热构件,用于加热夹持部件和定影带;形成在定影带内的内部支撑构件,以挤压辊隙形成构件的夹持部分 朝向可旋转的压辊,以及形成在定影带外部的外支撑构件,并且外支撑构件的两端与内支撑构件接合,从而增强内支撑构件的强度,并形成用于辐射热的路径 分散。 支撑单元包括放置在皮带单元内的内支撑构件和设置在皮带单元外部的外支撑构件,外支撑构件的两端与内支撑构件接合以增强内支撑构件的强度, 形成辐射热分散的路径。
    • 8. 发明授权
    • Flash memory system and programming method performed therein
    • 闪存系统及其中执行的编程方法
    • US07765359B2
    • 2010-07-27
    • US11730800
    • 2007-04-04
    • Shin-wook KangDong-woo Lee
    • Shin-wook KangDong-woo Lee
    • G06F12/00
    • G11C16/10
    • Provided are a flash memory system and a programming method performed in the flash memory system. The flash memory system includes a buffer unit including a plurality of buffers, and temporarily storing data transmitted by a host; a plurality of channel units each including at least one flash memory chip that includes a plurality of memory cell arrays; and a control unit which controls the data stored in the buffer unit to be sequentially transmitted to the channel units and the transmitted data to be recorded to the memory cell arrays of the flash memory chips in the channel units.
    • 提供了一种在闪存系统中执行的闪存系统和编程方法。 闪速存储器系统包括:缓冲单元,包括多个缓冲器,并临时存储主机发送的数据; 多个通道单元,每个通道单元包括至少一个包括多个存储单元阵列的闪存芯片; 以及控制单元,其将存储在缓冲器单元中的数据顺序地发送到频道单元,并将发送的数据记录到频道单元中的闪存芯片的存储单元阵列。
    • 9. 发明授权
    • Method of controlling on-die termination of memory devices sharing signal lines
    • 控制共享信号线的存储设备的片上终端的方法
    • US07554353B2
    • 2009-06-30
    • US11723518
    • 2007-03-20
    • Dong-woo LeeJung-yong Choi
    • Dong-woo LeeJung-yong Choi
    • H03K17/16G11C7/00
    • H04L25/0278H03K19/0005
    • A method of controlling On-Die Termination (ODT) resistors of memory devices sharing signal lines is provided. The ODT controlling method comprises setting an ODT control enable signal of each of the memory devices and address/command or data termination information to a mode register of the corresponding memory device, and controlling resistances of ODT resistors of the signal lines in the memory devices in response to the address/command or data termination information and termination addresses. When only one of the memory devices is activated, ODT resistors of the activated memory device are set to a first resistance. When all the memory devices are activated, ODT resistors of the memory devices are set to a second resistance.
    • 提供了一种控制共享信号线的存储器件的片上端接(ODT)电阻的方法。 ODT控制方法包括将每个存储器件的ODT控制使能信号和地址/命令或数据终止信息设置到对应的存储器件的模式寄存器,以及控制存储器件中信号线的ODT电阻的电阻 响应地址/命令或数据终止信息和终止地址。 当只有一个存储器件被激活时,激活的存储器件的ODT电阻被设置为第一个电阻。 当所有存储器件被激活时,存储器件的ODT电阻被设置为第二电阻。