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1. 发明授权

US06756600B2 Ion implantation with improved ion source life expectancy 有权
标题翻译：离子注入具有改善的离子源寿命
公开(公告)号：US06756600B2
公开(公告)日：2004-06-29
申请号：US09252845
申请日：1999-02-19
申请人： Che-Hoo Ng , Emi Ishida , Jaime M. Reyes , Jinning Liu , Sandeep Mehta
发明人： Che-Hoo Ng , Emi Ishida , Jaime M. Reyes , Jinning Liu , Sandeep Mehta
IPC分类号： H01J3708
CPC分类号： H01J27/08 , H01J37/08 , H01J2237/31701
摘要： A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.
摘要翻译：在离子注入系统中增加离子源寿命的方法使用惰性气体（例如氩或氙）引入含卤素源气体中。惰性气体组分通过增强溅射在等离子体环境中具有清洁效果。

2. 发明授权

US07993698B2 Techniques for temperature controlled ion implantation 有权
标题翻译：温度控制离子注入技术
公开(公告)号：US07993698B2
公开(公告)日：2011-08-09
申请号：US11525878
申请日：2006-09-23
申请人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
发明人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
IPC分类号： C23C16/48 , C23C16/52 , C23C14/48 , C23C14/54 , C23C14/52
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

3. 发明申请

US20080076194A1 Techniques for temperature controlled ion implantation 有权
标题翻译：温度控制离子注入技术
公开(公告)号：US20080076194A1
公开(公告)日：2008-03-27
申请号：US11525878
申请日：2006-09-23
申请人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
发明人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

4. 发明授权

US07544957B2 Non-uniform ion implantation 有权
标题翻译：非均匀离子注入
公开(公告)号：US07544957B2
公开(公告)日：2009-06-09
申请号：US11441633
申请日：2006-05-26
申请人： Steven R. Walther , Sandeep Mehta
发明人： Steven R. Walther , Sandeep Mehta
IPC分类号： H01J37/08 , G21K5/10
CPC分类号： H01J37/3171 , H01J37/3026 , H01J37/3172 , H01J2237/30461 , H01J2237/30472 , H01J2237/30488 , H01J2237/31703 , H01J2237/3171
摘要： A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.
摘要翻译：一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。光束可以是扫描光束或带状光束。还提供了离子注入机。

5. 发明申请

US20070123012A1 Plasma implantation of deuterium for passivation of semiconductor-device interfaces 失效
标题翻译：用于钝化半导体器件界面的氘的等离子体注入
公开(公告)号：US20070123012A1
公开(公告)日：2007-05-31
申请号：US11288828
申请日：2005-11-29
申请人： Steven Walther , Ukyo Jeong , Sandeep Mehta , Naushad Variam
发明人： Steven Walther , Ukyo Jeong , Sandeep Mehta , Naushad Variam
IPC分类号： H01L21/04
CPC分类号： H01L21/3003 , H01L21/28185 , H01L21/2822 , H01L21/28238
摘要： A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.
摘要翻译：一种制造基于半导体的器件的方法，包括提供包括半导体层的衬底，在半导体层上形成栅介质层，形成包括氘的等离子体，将等离子体等离子体注入氘到衬底中，以及退火衬底以促进钝化介电层和半导体层之间的界面。

6. 发明申请

US20220068152A1 SYSTEM, APPARATUS, METHOD FOR ASSESSMENT OF AN ATHLETE'S PERFORMANCE IN AN ATHLETIC SPORT 有权
公开(公告)号：US20220068152A1
公开(公告)日：2022-03-03
申请号：US17445903
申请日：2021-08-25
申请人： Clarence R. Johnson , Robert Wesley Smith , Regis Bolden, II , Sandeep Mehta , Zuwana Johnson , Javarro Russell , David Michael Schor
发明人： Clarence R. Johnson , Robert Wesley Smith , Regis Bolden, II , Sandeep Mehta , Zuwana Johnson , Javarro Russell , David Michael Schor
IPC分类号： G09B7/00 , G06F3/0483 , G06F3/0484 , A63B24/00
摘要： A system, apparatus, and method to provide a systematic assessment learning approach that is utilized through a computing device to determine its users sport IQ score for one or more sports is disclosed. The system includes a multi-dimensional, systematic learning assessment processor to correlate answered questions and compute the sport IQ-score. In some cases, the questions in the database may include videos of sport content and other associated sport content. The system presents a quantifiable metric of a user's performance potential in a sport and provides a learning program for developing the user's skills across multiple dimensions.

7. 发明授权

US08074111B1 System and method for responding to failure of a hardware locus at a communication installation 有权
标题翻译：用于响应通信安装处的硬件轨迹的故障的系统和方法
公开(公告)号：US08074111B1
公开(公告)日：2011-12-06
申请号：US11523195
申请日：2006-09-18
申请人： Sandeep Mehta
发明人： Sandeep Mehta
IPC分类号： G06F11/00
CPC分类号： G06F11/2033 , G06F11/2038 , G06F2201/805
摘要： A method for responding to a failure of hardware locus of at a communication installation having a plurality of control apparatuses for controlling a plurality of processes distributed among a plurality of hardware loci, the hardware loci including at least one spare hardware locus, includes the steps of: (a) Shifting control of a failed process from an initial control apparatus to an alternate control apparatus located at an alternate hardware locus than the failed hardware locus. The failed process is a respective process controlled by the initial control apparatus located at the failed hardware locus. (b) Relocating the respective control apparatuses located at the failed hardware locus to a spare hardware locus. (c) Shifting control of the failed process from the alternate control apparatus to the initial control apparatus relocated at the spare hardware locus.
摘要翻译：一种响应于具有多个控制装置的通信装置的硬件轨迹的故障的方法，所述多个控制装置用于控制分布在多个硬件轨迹之间的多个处理，所述硬件轨迹包括至少一个备用硬件轨迹，包括以下步骤：：（a）将故障处理的控制从初始控制装置转移到位于与故障硬件轨迹相比的备用硬件轨迹处的替代控制装置。失败的过程是由位于故障硬件轨迹处的初始控制装置控制的相应过程。（b）将位于故障硬件轨迹的各控制装置重定位到备用硬件轨迹。（c）将故障处理的控制从替代控制装置转移到在备用硬件轨迹上重定位的初始控制装置。

8. 发明授权

US07544959B2 In situ surface contamination removal for ion implanting 有权
标题翻译：用于离子注入的原位表面污染去除
公开(公告)号：US07544959B2
公开(公告)日：2009-06-09
申请号：US12099420
申请日：2008-04-08
申请人： Steven R. Walther , Sandeep Mehta , Naushad Variam , Ukyo Jeong
发明人： Steven R. Walther , Sandeep Mehta , Naushad Variam , Ukyo Jeong
IPC分类号： H01J37/317 , H01J37/36 , H01L21/302
CPC分类号： C03C23/0055 , B08B7/0057 , B08B7/0071 , C03C15/00 , C03C23/002 , H01J37/321 , H01J37/32412 , H01J2237/335 , H01L21/02046 , H01L21/26513
摘要： Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.
摘要翻译：公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。

9. 发明申请

US20090070403A1 DISTRIBUTED ENVIRONMENT CONTROLLED ACCESS FACILITY 失效
标题翻译：分布式环境控制访问设施
公开(公告)号：US20090070403A1
公开(公告)日：2009-03-12
申请号：US12135290
申请日：2008-06-09
申请人： Rahul JINDANI , Vinod Kannoth , Deepak Kanwar , Rinku Kanwar , Jay Krishnamurthy , Gregory L. McKee , Sandeep Mehta , Penny J. Peachey-Kountz , Ravi K. Ravipati
发明人： Rahul JINDANI , Vinod Kannoth , Deepak Kanwar , Rinku Kanwar , Jay Krishnamurthy , Gregory L. McKee , Sandeep Mehta , Penny J. Peachey-Kountz , Ravi K. Ravipati
IPC分类号： G06F15/173
CPC分类号： H04L63/102
摘要： A computer implemented web based access control facility for a distributed environment, which allows users to request for access, take the request through appropriate approval work flow and finally make it available to the users and applications. This program also performs an automatic task of verifying the health of data, access control data as well as the entitlements, to avoid malicious user access. The system also provides an active interface to setup a backup, to delegate the duty in absence. Thus this system provides a comprehensive facility to grant, re-certify and control the entitlements and users in a distributed environment.
摘要翻译：用于分布式环境的计算机实现的基于网络的访问控制设施，其允许用户请求访问，通过适当的批准工作流程请求请求，并最终使其可用于用户和应用。该程序还执行一个自动任务来验证数据的健康状况，访问控制数据以及授权，以避免恶意用户访问。该系统还提供了一个主动界面来设置备份，以便在缺席时委派职责。因此，该系统提供了在分布式环境中授予，重新认证和控制权利和用户的综合设施。

10. 发明授权

US07464400B2 Distributed environment controlled access facility 失效
标题翻译：分布式环境控制访问设施
公开(公告)号：US07464400B2
公开(公告)日：2008-12-09
申请号：US10249623
申请日：2003-04-24
申请人： Rahul Jindani , Vinod Kannoth , Deepak Kanwar , Rinku Kanwar , Jay Krishnamurthy , Gregory L. McKee , Sandeep Mehta , Penny J. Peachey-Kountz , Ravi K. Ravipati
发明人： Rahul Jindani , Vinod Kannoth , Deepak Kanwar , Rinku Kanwar , Jay Krishnamurthy , Gregory L. McKee , Sandeep Mehta , Penny J. Peachey-Kountz , Ravi K. Ravipati
IPC分类号： G06F7/04 , H04L9/32 , H04L9/00 , H04N7/167
CPC分类号： H04L63/102
摘要： A computer implemented web based access control facility for a distributed environment, which allows users to request for access, take the request through appropriate approval work flow and finally make it available to the users and applications. This program also performs an automatic task of verifying the health of data, access control data as well as the entitlements, to avoid malicious user access. The system also provides an active interface to setup a backup, to delegate the duty in absence. Thus this system provides a comprehensive facility to grant, re-certify and control the entitlements and users in a distributed environment.
摘要翻译：用于分布式环境的计算机实现的基于网络的访问控制设施，其允许用户请求访问，通过适当的批准工作流程请求请求，并最终使其可用于用户和应用。该程序还执行一个自动任务来验证数据的健康状况，访问控制数据以及权限，以避免恶意用户访问。该系统还提供了一个主动界面来设置备份，以便在缺席时委派职责。因此，该系统提供了在分布式环境中授予，重新认证和控制权利和用户的综合设施。

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