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1. 发明申请

US20050274696A1 Single-acid compensating system 审中-公开
标题翻译：单酸补偿系统
公开(公告)号：US20050274696A1
公开(公告)日：2005-12-15
申请号：US11151872
申请日：2005-06-13
申请人： Chang Huang , Jung-Lung Huang , Chen-Hsien Ou , Sheng-Chou Gau
发明人： Chang Huang , Jung-Lung Huang , Chen-Hsien Ou , Sheng-Chou Gau
IPC分类号： B44C1/22
CPC分类号： H01L21/67086 , H01L21/67253
摘要： A single-acid compensating system (20) includes an etching unit (201), and a monitoring and compensating unit (202). The etching unit includes an acid-mixing tank (212). The monitoring and compensating unit includes a measuring element (213), a compensating calculator (214), and a single-acid compensating tank (215). The acid-mixing tank, the measuring element, the calculator, and the compensating tank are connected to cooperatively form a compensating loop. When the measuring element measures that the concentration of the single-acid is lower than a lower limit, it transmits this information to the calculator. After processing the information and performing a calculation, the calculator determines a certain quantity of the single-acid which should be compensated in the acid-mixing tank. All these actions are automated, and they ensure that the concentration of the single-acid is constantly maintained very close to the optimal value. Therefore, the single-acid compensating system conveniently allows the etching process to continue steadily.
摘要翻译：单酸补偿系统（20）包括蚀刻单元（201）和监视和补偿单元（202）。蚀刻单元包括酸混合罐（212）。监测和补偿单元包括测量元件（213），补偿计算器（214）和单酸补偿罐（215）。酸搅拌槽，测量元件，计算器和补偿槽相连，形成补偿回路。当测量元件测量单酸浓度低于下限时，它将该信息传输到计算器。在处理信息并执行计算之后，计算器确定在酸性混合罐中应补偿的一定量的单酸。所有这些操作都是自动化的，它们确保单酸浓度始终保持非常接近最佳值。因此，单酸补偿系统方便地允许蚀刻过程稳定地继续。

2. 发明申请

US20050183819A1 Etching system using a deionized water adding device 有权
标题翻译：蚀刻系统使用去离子水添加装置
公开(公告)号：US20050183819A1
公开(公告)日：2005-08-25
申请号：US11026639
申请日：2004-12-30
申请人： Chen-Hsien Ou , Chang Huang , Sheng-Chou Gau , Jung-Lung Huang , Ching-Feng Chen , Chih Huang
发明人： Chen-Hsien Ou , Chang Huang , Sheng-Chou Gau , Jung-Lung Huang , Ching-Feng Chen , Chih Huang
IPC分类号： C23F1/00 , H01L21/00
CPC分类号： H01L21/67086 , Y10S134/902
摘要： An etching system (3) includes an etching chamber (31), an etchant solution tank (32) connected with the etching chamber, a heater (34) set in the tank, and a deionized water (DIW) adding device. The DIW adding device includes a DIW feeding pipe (36) having a first timer (361), and a clean dry air (CDA) feeding pipe (35) having a second timer (351). The DIW and CDA feeding pipes combine into a main pipe (37) that is connected with the etching chamber. A portion of the DIW feeding pipe is set in the tank and heated by the heater. The temperature of the DIW fed into the etching chamber and the temperature of the etchant solution pumped into the etching chamber are same. Thus when the DIW is fed into the etching chamber, the temperature of the etching chamber does not fluctuate, which can maintain the quality of the etching process.
摘要翻译：蚀刻系统（3）包括蚀刻室（31），与蚀刻室连接的蚀刻剂溶液罐（32），设置在罐中的加热器（34）和去离子水（DIW）添加装置。 DIW添加装置包括具有第一定时器（361）的DIW进料管（36）和具有第二定时器（351）的干净干燥空气（CDA）进料管（35）。 DIW和CDA进料管组合成与蚀刻室连接的主管（37）。将DIW进料管的一部分置于罐中并通过加热器加热。进入蚀刻室的DIW的温度和泵入蚀刻室的蚀刻液的温度是相同的。因此，当DIW进入蚀刻室时，蚀刻室的温度不波动，这可以保持蚀刻工艺的质量。

3. 发明申请

US20060011577A1 Method for post-treatment of semi-finished product after dry etching process 审中-公开
标题翻译：干蚀刻工艺后半成品后处理方法
公开(公告)号：US20060011577A1
公开(公告)日：2006-01-19
申请号：US11173389
申请日：2005-06-30
申请人： Li-Feng Chiu , Sheng-Chou Gau , Jung-Lung Huang , Chen-Hsien Ou , Chang Huang , Ching Chen
发明人： Li-Feng Chiu , Sheng-Chou Gau , Jung-Lung Huang , Chen-Hsien Ou , Chang Huang , Ching Chen
IPC分类号： B44C1/22
CPC分类号： H01L21/02063
摘要： A post-treatment method of a semi-finished product after a dry etching process includes the steps of: providing the semi-finished product after completion of a dry etching process, the semi-finished product having a residue formed during the dry etching process; placing the semi-finished product in a chamber having an inlet and an outlet; introducing an SF6 gas into the chamber via the inlet to effect a reaction between the SF6 gas and the residue so as to produce a reaction gas; and discharging any remaining SF6 gas and the reaction gas out of the chamber via the outlet. The SF6 gas can completely react with the residue from the dry etching process and results residue gas pumped out by a vacuum system. It can entirely eliminate the residue over the contact hole and on the inside surface of the dry etching chamber, and can avoid electrical connection errors and improve the efficiency of manufacture. It also can clean the dry etching chamber and prolong the use life of the dry etching chamber.
摘要翻译：干蚀刻处理后的半成品的后处理方法包括以下步骤：在干法蚀刻工艺完成后提供半成品，该半成品在干蚀刻工艺中形成残留物; 将半成品放置在具有入口和出口的室中; 通过入口将SF 6 C 6气体引入室中，以进行SF 6气体与残留物之间的反应，从而产生反应气体; 并且通过出口将任何剩余的SF 6气体和反应气体排出室外。 SF 6气体可以与来自干蚀刻工艺的残留物完全反应，并且导致由真空系统抽出的残留气体。它可以完全消除干蚀刻室的接触孔和内表面上的残留物，并且可以避免电连接错误并提高制造效率。它还可以清洁干蚀刻室，延长干蚀刻室的使用寿命。

4. 发明申请

US20050279452A1 Etching reaction device with protrusions 审中-公开
标题翻译：具有突起的蚀刻反应装置
公开(公告)号：US20050279452A1
公开(公告)日：2005-12-22
申请号：US11156275
申请日：2005-06-17
申请人： Ching-Feng Huang , Jung-Lung Huang , Chang Huang , Chen-Hsien Ou , Chih Huang , Sheng-Chou Gau
发明人： Ching-Feng Huang , Jung-Lung Huang , Chang Huang , Chen-Hsien Ou , Chih Huang , Sheng-Chou Gau
IPC分类号： C23F1/00 , H01L21/00
CPC分类号： H01L21/67086
摘要： An etching reaction device (3) includes an etching reaction chamber (30), and a number of protrusions (301) arranged on the bottom of the etching reaction chamber. Thus it can economize the etching time and quickly complement the concentration of the etching liquid near to a wafer (7). The protrusions can reduce the capability of the etching reaction chamber, thus it can economize the etching liquid.
摘要翻译：蚀刻反应装置（3）包括蚀刻反应室（30）和布置在蚀刻反应室底部的多个突起（301）。因此，可以节省蚀刻时间并快速补充靠近晶片（7）的蚀刻液的浓度。这些突起可以降低蚀刻反应室的能力，从而可以节省蚀刻液体。

5. 发明申请

US20060144822A1 Apparatus and method for wet-etching 审中-公开
标题翻译：用于湿蚀刻的设备和方法
公开(公告)号：US20060144822A1
公开(公告)日：2006-07-06
申请号：US11317858
申请日：2005-12-23
申请人： Sheng-Chou Gau , Jung-Lung Huang , Chen-Hsien Ou , Li-Feng Chiu
发明人： Sheng-Chou Gau , Jung-Lung Huang , Chen-Hsien Ou , Li-Feng Chiu
IPC分类号： B44C1/22 , C23F1/00 , H01L21/302 , H01L21/306
CPC分类号： H01L21/67173 , C03C15/00 , H01L21/67028 , H01L21/67236
摘要： A wet-etching apparatus (20) includes a first etching chamber (213), a second etching chamber (215), and a cleaning chamber (214) located between the first and second etching chambers. The wet-etching apparatus includes the cleaning chamber disposed between the first and second etching chambers. After being etched in the first etching chamber and before being conveyed to the second etching chamber, a glass substrate is cleaned, so that the residue thereon is removed. Because no resultant blocks the wet-etching reaction, the glass substrate is etched uniformly. Thus, the quality and the yield of the wet-etching process are improved.
摘要翻译：湿蚀刻装置（20）包括位于第一和第二蚀刻室之间的第一蚀刻室（213），第二蚀刻室（215）和清洗室（214）。湿蚀刻装置包括设置在第一和第二蚀刻室之间的清洁室。在第一蚀刻室中蚀刻并在被输送到第二蚀刻室之前，清洁玻璃基板，从而除去其上的残留物。由于没有结果阻止湿蚀刻反应，玻璃基板被均匀地蚀刻。因此，湿法蚀刻工艺的质量和产量提高。

6. 发明授权

US07229521B2 Etching system using a deionized water adding device 有权
标题翻译：蚀刻系统使用去离子水添加装置
公开(公告)号：US07229521B2
公开(公告)日：2007-06-12
申请号：US11026639
申请日：2004-12-30
申请人： Chen-Hsien Ou , Chang Kuei Huang , Sheng-Chou Gau , Jung-Lung Huang , Ching-Feng Chen , Chih Hung Huang
发明人： Chen-Hsien Ou , Chang Kuei Huang , Sheng-Chou Gau , Jung-Lung Huang , Ching-Feng Chen , Chih Hung Huang
IPC分类号： B08B7/04 , B08B3/00
CPC分类号： H01L21/67086 , Y10S134/902
摘要： An etching system (3) includes an etching chamber (31), an etchant solution tank (32) connected with the etching chamber, a heater (34) set in the tank, and a deionized water (DIW) adding device. The DIW adding device includes a DIW feeding pipe (36) having a first timer (361), and a clean dry air (CDA) feeding pipe (35) having a second timer (351). The DIW and CDA feeding pipes combine into a main pipe (37) that is connected with the etching chamber. A portion of the DIW feeding pipe is set in the tank and heated by the heater. The temperature of the DIW fed into the etching chamber and the temperature of the etchant solution pumped into the etching chamber are same. Thus when the DIW is fed into the etching chamber, the temperature of the etching chamber does not fluctuate, which can maintain the quality of the etching process.
摘要翻译：蚀刻系统（3）包括蚀刻室（31），与蚀刻室连接的蚀刻剂溶液罐（32），设置在罐中的加热器（34）和去离子水（DIW）添加装置。 DIW添加装置包括具有第一定时器（361）的DIW进料管（36）和具有第二定时器（351）的干净干燥空气（CDA）进料管（35）。 DIW和CDA进料管组合成与蚀刻室连接的主管（37）。将DIW进料管的一部分置于罐中并通过加热器加热。进入蚀刻室的DIW的温度和泵入蚀刻室的蚀刻液的温度是相同的。因此，当DIW进入蚀刻室时，蚀刻室的温度不波动，这可以保持蚀刻工艺的质量。

7. 发明申请

US20050241760A1 Wet etching system 审中-公开
标题翻译：湿蚀刻系统
公开(公告)号：US20050241760A1
公开(公告)日：2005-11-03
申请号：US11120425
申请日：2005-05-02
申请人： Sheng-Chou Gau , Jung-Lung Huang , Chen-Hsien Ou , Chang-Kuei Huang , Ching-Feng Chen , Chih-Hung Huang
发明人： Sheng-Chou Gau , Jung-Lung Huang , Chen-Hsien Ou , Chang-Kuei Huang , Ching-Feng Chen , Chih-Hung Huang
IPC分类号： C23F1/00 , H01L21/00
CPC分类号： H01L21/67161 , H01L21/67028 , H01L21/67173 , H01L21/67207
摘要： A wet etching system includes a substrate holding chamber (211), a drying chamber (218), a cleaning chamber (217), a wet etching region, an elevator (213), a conveyor (212) arranged above the drying chamber. The cleaning chamber, and the wet etching region, the conveyor communicating with both the substrate holding chamber and the elevator. A substrate being transmitted along the conveyor can avoid shaking, vibration and other disturbances caused by high pressure cleaning. In addition, because the etching chambers are located relatively far away from the substrate holding chamber, there is reduced risk of substrates that are held in the substrate holding chamber being contaminated by chemical reagents used in the etching processes. Furthermore, when two wet etching systems are arranged substantially diagonally opposite each other, the interspace therebetween conveniently serves as a common access region for maintenance and cleaning of the wet etching systems.
摘要翻译：湿蚀刻系统包括基板保持室（211），干燥室（218），清洁室（217），湿蚀刻区域，电梯（213），布置在干燥室上方的输送机（212）。清洁室和湿蚀刻区域，与基板保持室和电梯两者连通的输送器。沿输送机传输的基材可以避免由高压清洗引起的振动，振动和其他干扰。此外，由于蚀刻室位于相对远离基板保持室的位置，因此保留在基板保持室中的基板被蚀刻工艺中使用的化学试剂污染的风险降低。此外，当两个湿式蚀刻系统基本上相对地相对布置时，它们之间的间隙便于用作湿式蚀刻系统的维护和清洁的公共进入区域。

8. 发明申请

US20080268567A1 Method for fabricating organic light emitting display 审中-公开
标题翻译：制造有机发光显示器的方法
公开(公告)号：US20080268567A1
公开(公告)日：2008-10-30
申请号：US12150384
申请日：2008-04-28
申请人： Shih-Chang Wang , Jung-Lung Huang
发明人： Shih-Chang Wang , Jung-Lung Huang
IPC分类号： H01L51/56
CPC分类号： H01L51/5206 , H01L51/0003 , H01L51/0005 , H01L51/001 , H01L51/0035 , H01L51/0038 , H01L51/0059 , H01L51/0078 , H01L51/5215 , H01L2251/308
摘要： An exemplary method for fabricating an OLED (20) is provided. The method includes: providing an insulative substrate; forming a first electrode on the substrate, the first electrode being a conductive thin film; forming a second electrode on the first electrode, comprising providing an oxygen-containing oxidizing gas with a material used to form the second electrode; patterning the first and second electrodes to form an anode on the substrate; forming a hole injection layer on the anode; forming a hole transfer layer on the hole injection layer; forming an organic light emitting layer on the hole transfer layer; forming an electron transfer layer on the organic light emitting layer; forming an electron injection layer on the electron transfer layer; and forming a cathode on the electron injection layer.
摘要翻译：提供了一种用于制造OLED（20）的示例性方法。该方法包括：提供绝缘基板; 在基板上形成第一电极，第一电极是导电薄膜; 在所述第一电极上形成第二电极，包括用用于形成所述第二电极的材料提供含氧氧化气体; 图案化第一和第二电极以在衬底上形成阳极; 在阳极上形成空穴注入层; 在空穴注入层上形成空穴转移层; 在空穴转移层上形成有机发光层; 在有机发光层上形成电子转移层; 在电子转移层上形成电子注入层; 并在电子注入层上形成阴极。

9. 发明申请

US20080277654A1 Organic light emitting diode with fluorinion-doped anode and method for fabricating same 有权
标题翻译：具有氟化掺杂阳极的有机发光二极管及其制造方法
公开(公告)号：US20080277654A1
公开(公告)日：2008-11-13
申请号：US12152023
申请日：2008-05-12
申请人： Shih-Chang Wang , Jung-Lung Huang
发明人： Shih-Chang Wang , Jung-Lung Huang
IPC分类号： H01L51/54 , H01L51/56
CPC分类号： H01L51/102 , H01L51/5206 , H01L2251/305
摘要： An exemplary organic light emitting diode (20) includes a substrate (21), a first electrode (22) with a plurality of fluorinions therein, an organic emission stack (29), and a second electrode (28) sequentially stacked in that order. A related method for fabricating the organic emitting diode is also provided.
摘要翻译：示例性有机发光二极管（20）包括基板（21），其中具有多个氟化物的第一电极（22），有机发射叠层（29）和顺序地依次层叠的第二电极（28）。还提供了制造有机发光二极管的相关方法。

10. 发明授权

US08106861B2 Reflective type electro-wetting display device 有权
标题翻译：反光型电润湿显示装置
公开(公告)号：US08106861B2
公开(公告)日：2012-01-31
申请号：US12229638
申请日：2008-08-25
申请人： Rei-Yun Lee , Jung-Lung Huang
发明人： Rei-Yun Lee , Jung-Lung Huang
IPC分类号： G09G3/34
CPC分类号： G02B26/005 , G09G3/3433 , G09G2300/04 , H01J9/241
摘要： An electro-wetting display device includes a first substrate; a second substrate opposite to the first substrate; a plurality of side walls interposed between the first and second substrates, the side walls being arranged in a matrix and cooperating with the first and second substrates to form a plurality of spaces; a first polar liquid disposed in each of the spaces; a second, colored, non-polar liquid disposed in each of the spaces. The second liquid is immiscible with the first liquid. The second substrate includes a reflective electrode and a hydrophobic insulating layer disposed on the reflective electrode. The reflective electrode includes a first metal layer and a transparent protective layer, and the transparent protective layer is interposed between the metal layer and the hydrophobic insulating layer.
摘要翻译：电润湿显示装置包括第一基板; 与第一基板相对的第二基板; 插入在所述第一和第二基板之间的多个侧壁，所述侧壁布置成矩阵并与所述第一和第二基板配合以形成多个空间; 设置在每个空间中的第一极性液体; 第二，着色的非极性液体，设置在每个空间中。第二液体与第一液体不混溶。第二基板包括设置在反射电极上的反射电极和疏水绝缘层。反射电极包括第一金属层和透明保护层，并且透明保护层介于金属层和疏水性绝缘层之间。

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