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1. 发明专利

JPH1174223A METHOD FOR METAL LAYER FORMING ON SUBSTRATE 失效
公开(公告)号：JPH1174223A
公开(公告)日：1999-03-16
申请号：JP22840697
申请日：1997-08-25
申请人： CYPRESS SEMICONDUCTOR CORP
发明人： SAM GEHA
IPC分类号： C23C14/34 , H01L21/203 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To form a metal layer that does not include voids or includes few voids on a substrate by speedily heating the substrate, when forming a metal layer on the substrate using a low-temperature deposition process and the succeeding high-temperature deposition process. SOLUTION: A method 200 for forming a metal layer on a substrate has a low-temperature deposition process 201 for depositing a metal, when a substrate is at a relatively low temperature and a high-temperature deposition process 202 for depositing a metal, when the substrate is at a relatively high temperature. By heating the substrate during the high-temperature deposition process 202, a metal (in some cases, also a metal that is deposited during the high-temperature deposition process 202 thereafter) that is deposited during the low-temperature deposition process 201 is further heated. In this case, the substrate is heated further rapidly during the high-temperature deposition process than the case of other metallization processes, including the high-temperature deposition process. Consequently, as a result, the mobility of metal atoms is increased further more rapidly than a conventional case. Especially, the mobility of an atom being farther away from the surface of the substrate increases further more rapidly than other methods.

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