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    • 2. 发明申请
    • DRY ETCHING AND MIRROR DEPOSITION PROCESSES FOR SILICONE ELASTOMER
    • 硅胶弹性体的干蚀刻和镜面沉积工艺
    • WO2002066700A1
    • 2002-08-29
    • PCT/US2002/004341
    • 2002-02-14
    • CALIFORNIA INSTITUTE OF TECHNOLOGY
    • SCHERER, AxelADAMS, Mark
    • C23C14/32
    • C23C14/10B29C59/14B29K2083/00C23C14/0652
    • According to the invention semiconductor processing procedures can be applied to silicone elastomeric materials. The surface tension of the elastomeric material is changed by depositing a thin layer of silicon, silicon nitride, silicon dioxide or a combination thereof onto the elastomer's exposed surface. In the illustrated embodiment it is shown that it is possible to deposit a thin layer of silicon dioxide onto the elastomer's exposed surface through reactive sputter deposition of silicon dioxide within an argon-oxygen plasma. In another plasma fabrication procedure, the elastomer material is directionally etched using a standard RF plasma etching system and a dry chemical oxygen-Freon removal procedure, which procedure volatilizes all of the components of the polydimethylsilicone (PDMS) or GE's RTV elastomer material.
    • 根据本发明,半导体加工程序可以应用于硅橡胶材料。 通过将硅,氮化硅,二氧化硅或其组合的薄层沉积到弹性体的暴露表面上来改变弹性体材料的表面张力。 在所示实施例中,显示了可以通过二氧化硅在氩 - 氧等离子体内的反应性溅射沉积将二氧化硅薄层沉积到弹性体的暴露表面上。 在另一种等离子体制造方法中,使用标准RF等离子体蚀刻系统和干法化学氧 - 氟利昂去除程序对弹性体材料进行定向蚀刻,该程序使聚二甲基硅氧烷(PDMS)或GE的RTV弹性体材料的所有组分挥发。