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1. 发明申请

US20110068476A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110068476A1
公开(公告)日：2011-03-24
申请号：US12875628
申请日：2010-09-03
申请人： Atsuko KAWASAKI , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
发明人： Atsuko KAWASAKI , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
IPC分类号： H01L23/48 , H01L21/762
CPC分类号： H01L27/14683 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L24/13 , H01L24/32 , H01L27/14618 , H01L2224/13111 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12043 , H01L2924/3025 , H01L2924/00
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫，以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

2. 发明授权

US08580652B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08580652B2
公开(公告)日：2013-11-12
申请号：US12875628
申请日：2010-09-03
申请人： Atsuko Kawasaki , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
发明人： Atsuko Kawasaki , Kenichiro Hagiwara , Ikuko Inoue , Kazutaka Akiyama , Itsuko Sakai , Mie Matsuo , Masahiro Sekiguchi , Yoshiteru Koseki , Hiroki Neko , Koushi Tozuka , Kazuhiko Nakadate , Takuto Inoue
IPC分类号： H01L29/78
CPC分类号： H01L27/14683 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L24/13 , H01L24/32 , H01L27/14618 , H01L2224/13111 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12043 , H01L2924/3025 , H01L2924/00
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫，以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

3. 发明申请

US20090283847A1 SEMICONDUCTOR PACKAGE INCLUDING THROUGH-HOLE ELECTRODE AND LIGHT-TRANSMITTING SUBSTRATE 有权
标题翻译：半导体封装，包括通孔电极和发光基板
公开(公告)号：US20090283847A1
公开(公告)日：2009-11-19
申请号：US12508293
申请日：2009-07-23
申请人： Atsuko KAWASAKI , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
发明人： Atsuko KAWASAKI , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
IPC分类号： H01L31/02
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L27/14636 , H01L2224/02372 , H01L2224/0392 , H01L2224/0401 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H04N5/2257
摘要： An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.
摘要翻译：成像元件形成在半导体衬底的第一主表面上。外部端子形成在半导体衬底的第二主表面上。在形成在半导体衬底中的通孔中形成通孔电极。第一电极焊盘形成在第一主表面中的通孔电极上。在第一电极焊盘和第一主表面上形成层间绝缘膜。在层间绝缘膜上形成第二电极焊盘。在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。

4. 发明授权

US07808064B2 Semiconductor package including through-hole electrode and light-transmitting substrate 有权
标题翻译：半导体封装包括通孔电极和透光衬底
公开(公告)号：US07808064B2
公开(公告)日：2010-10-05
申请号：US12508293
申请日：2009-07-23
申请人： Atsuko Kawasaki , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
发明人： Atsuko Kawasaki , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
IPC分类号： H01L31/02
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L27/14636 , H01L2224/02372 , H01L2224/0392 , H01L2224/0401 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H04N5/2257
摘要： An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.
摘要翻译：成像元件形成在半导体衬底的第一主表面上。外部端子形成在半导体衬底的第二主表面上。在形成在半导体衬底中的通孔中形成通孔电极。第一电极焊盘形成在第一主表面中的通孔电极上。在第一电极焊盘和第一主表面上形成层间绝缘膜。在层间绝缘膜上形成第二电极焊盘。在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。

5. 发明授权

US08476729B2 Solid-state imaging device comprising through-electrode 失效
标题翻译：固态成像装置包括通孔
公开(公告)号：US08476729B2
公开(公告)日：2013-07-02
申请号：US12727564
申请日：2010-03-19
申请人： Ikuko Inoue , Kenichiro Hagiwara
发明人： Ikuko Inoue , Kenichiro Hagiwara
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L21/743 , H01L23/481 , H01L24/13 , H01L27/14621 , H01L27/14627 , H01L2224/05001 , H01L2224/05009 , H01L2224/05548 , H01L2224/16 , H01L2924/00014 , H01L2924/01077 , H01L2924/01322 , H01L2924/12043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.
摘要翻译：固态成像装置包括成像元件，外部端子，绝缘膜，通孔和第一电极。成像元件形成在半导体衬底的第一主表面上。外部端子形成在与半导体衬底的第一主表面相对的第二主表面上。绝缘膜形成在形成在半导体衬底中的通孔中。贯通电极形成在通孔中的绝缘膜上并与外部端子电连接。第一电极形成在半导体衬底的第一主表面上的贯通电极上。当从垂直于半导体衬底的第一主表面的方向观察时，绝缘膜和半导体衬底接触的外形大于第一电极的外形。

6. 发明授权

US07554141B2 Solid-state image pickup device and method of manufacturing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07554141B2
公开(公告)日：2009-06-30
申请号：US11392616
申请日：2006-03-30
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
IPC分类号： H01L31/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.
摘要翻译：一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸层到第一P型半导体层的表面部分。

7. 发明授权

US07456889B2 Solid-state imaging device with gate contacts overlapping both an isolation region and an active region 有权
标题翻译：具有栅极触点的固态成像器件与隔离区域和有源区域重叠
公开(公告)号：US07456889B2
公开(公告)日：2008-11-25
申请号：US11251825
申请日：2005-10-18
申请人： Ikuko Inoue , Hiroshige Goto
发明人： Ikuko Inoue , Hiroshige Goto
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00 , H01L31/062 , H01L31/113
CPC分类号： H04N5/335 , H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： A solid-state imaging device has an imaging region in which unit cells, each of which includes a photoelectric conversion section and a signal scanning circuit section, are disposed on a semiconductor substrate in a two-dimensional manner. The signal scanning circuit section is composed of a plurality of transistors. At least part of a gate contact of each transistor in the signal scanning circuit section is formed on an active region of each transistor.
摘要翻译：固态成像装置具有成像区域，其中包括光电转换部分和信号扫描电路部分的单元电池以二维方式设置在半导体衬底上。信号扫描电路部分由多个晶体管构成。信号扫描电路部分中的每个晶体管的栅极接触的至少一部分形成在每个晶体管的有源区上。

8. 发明申请

US20060219867A1 Solid-state image pickup device and method of manufacturing the same 有权
公开(公告)号：US20060219867A1
公开(公告)日：2006-10-05
申请号：US11392616
申请日：2006-03-30
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

9. 发明授权

US06987537B2 Image pickup system with MOS sensors and microlenses 有权
标题翻译：具有MOS传感器和微透镜的摄像系统
公开(公告)号：US06987537B2
公开(公告)日：2006-01-17
申请号：US09824774
申请日：2001-04-04
申请人： Ikuko Inoue
发明人： Ikuko Inoue
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14692
摘要： The image pickup system includes: MOS sensors arranged in an image pickup region of a semiconductor substrate in the form of a matrix and having photoelectric transfer layers; a peripheral circuit part formed in a region of the semiconductor substrate except for the image pickup region and having a driving circuit for driving the MOS sensors and a signal processing circuit for processing output signals from the MOS sensors; and microlenses, formed on the photoelectric transfer layers via a first insulating film, for condensing picture signals on the photoelectric transfer layers, wherein the driving circuit and the signal processing circuit in the peripheral circuit part are covered by a second insulating film, and the distance between the surface of the first insulating film and the semiconductor substrate is shorter than the distance between the surface of a second insulating film and the semiconductor substrate.
摘要翻译：图像拾取系统包括：MOS传感器，布置在矩阵形式的半导体衬底的摄像区域中并具有光电转移层; 外围电路部分形成在除了摄像区域之外的半导体衬底的区域中并且具有用于驱动MOS传感器的驱动电路和用于处理来自MOS传感器的输出信号的信号处理电路; 和微透镜，其经由第一绝缘膜形成在光电转移层上，用于聚集光电转移层上的图像信号，其中外围电路部分中的驱动电路和信号处理电路被第二绝缘膜覆盖，并且距离在第一绝缘膜的表面和半导体衬底之间的距离比第二绝缘膜的表面和半导体衬底之间的距离短。

10. 发明授权

US06271554B1 Solid-state image sensor having a substrate with an impurity concentration gradient 失效
标题翻译：具有杂质浓度梯度的衬底的固态图像传感器
公开(公告)号：US06271554B1
公开(公告)日：2001-08-07
申请号：US09110074
申请日：1998-07-02
申请人： Hidetoshi Nozaki , Hirofumi Yamashita , Hisanori Ihara , Tetsuya Yamaguchi , Ikuko Inoue
发明人： Hidetoshi Nozaki , Hirofumi Yamashita , Hisanori Ihara , Tetsuya Yamaguchi , Ikuko Inoue
IPC分类号： H01L27146
CPC分类号： H01L27/14643
摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.
摘要翻译：固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域，第一区域上的杂质低。

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