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1. 发明授权

US08124942B2 Plasma igniter for an inductively coupled plasma ion source 有权
标题翻译：用于电感耦合等离子体离子源的等离子点火器
公开(公告)号：US08124942B2
公开(公告)日：2012-02-28
申请号：US12710602
申请日：2010-02-23
申请人： Anthony Graupera , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang , Antonius Bastianus Wilhelmus Dirriwachter
发明人： Anthony Graupera , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang , Antonius Bastianus Wilhelmus Dirriwachter
IPC分类号： H01J27/00
CPC分类号： H01J37/08 , H01J37/24 , H01J2237/0815 , H01J2237/31749 , H05H1/36
摘要： A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.
摘要翻译：公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量样品和多个孔。等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。通过适当的孔隙材料选择使孔径的离子束溅射最小化。

2. 发明申请

US20120032092A1 Plasma Igniter for an Inductively Coupled Plasma Ion Source 有权
标题翻译：用于电感耦合等离子体离子源的等离子体点火器
公开(公告)号：US20120032092A1
公开(公告)日：2012-02-09
申请号：US13276731
申请日：2011-10-19
申请人： Anthony Graupera , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang , Antonius Bastianus Wilhelmus Dirriwachter
发明人： Anthony Graupera , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang , Antonius Bastianus Wilhelmus Dirriwachter
IPC分类号： H01J3/14 , H05B37/00 , H02J1/00 , H05B37/02
CPC分类号： H01J37/08 , H01J37/24 , H01J2237/0815 , H01J2237/31749 , H05H1/36
摘要： A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.
摘要翻译：公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量样品和多个孔。等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。通过适当的孔隙材料选择使孔径的离子束溅射最小化。

3. 发明授权

US08723143B2 Plasma igniter for an inductively coupled plasma ion source 有权
标题翻译：用于电感耦合等离子体离子源的等离子点火器
公开(公告)号：US08723143B2
公开(公告)日：2014-05-13
申请号：US13276731
申请日：2011-10-19
申请人： Anthony Graupera , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang , Antonius Bastianus Wilhelmus Dirriwachter
发明人： Anthony Graupera , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang , Antonius Bastianus Wilhelmus Dirriwachter
IPC分类号： G21G5/00
CPC分类号： H01J37/08 , H01J37/24 , H01J2237/0815 , H01J2237/31749 , H05H1/36
摘要： A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.
摘要翻译：公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量样品和多个孔。等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。通过适当的孔隙材料选择使孔径的离子束溅射最小化。

4. 发明申请

US20110198511A1 Plasma Igniter for an Inductively Coupled Plasma Ion Source 有权
标题翻译：用于电感耦合等离子体离子源的等离子体点火器
公开(公告)号：US20110198511A1
公开(公告)日：2011-08-18
申请号：US12710602
申请日：2010-02-23
申请人： ANTHONY GRAUPERA , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang
发明人： ANTHONY GRAUPERA , Sean Kellogg , Tom Miller , Dustin Laur , Shouyin Zhang
IPC分类号： H01J3/14 , H05H1/24
CPC分类号： H01J37/08 , H01J37/24 , H01J2237/0815 , H01J2237/31749 , H05H1/36
摘要： A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.
摘要翻译：公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量样品和多个孔。等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。通过适当的孔隙材料选择使孔径的离子束溅射最小化。

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