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    • 2. 发明授权
    • Positive charge pump
    • 正电荷泵
    • US6075402A
    • 2000-06-13
    • US946727
    • 1997-10-08
    • Andrea GhilardelliJacopo MulattiStefano Ghezzi
    • Andrea GhilardelliJacopo MulattiStefano Ghezzi
    • H02M3/07G05F1/10
    • H02M3/073
    • A charge pump comprises a plurality of stages connected in series, an input terminal of the charge pump being connected to a voltage supply and an output terminal of the charge pump providing an output voltage higher than the voltage supply. Each stage comprises unidirectional current flow MOS transistor means connected between a stage input terminal and a stage output terminal allowing current to flow only from said stage input terminal to said stage output terminal, and a first capacitor with one plate connected to said stage output terminal and another plate driven by a respective first digital signal periodically switching between ground and said voltage supply. The unidirectional current flow MOS transistor means of the stages have independent bulk electrodes, and a bias voltage generator circuit is provided for biasing the bulk electrodes of said unidirectional current flow MOS transistor means at respective bulk potentials which become progressively higher going from the stages proximate to said input terminal to the stages proximate to said output terminal of the charge pump.
    • 电荷泵包括串联连接的多个级,电荷泵的输入端连接到电压源,电荷泵的输出端提供高于电压源的输出电压。 每个级包括连接在级输入端和级输出端之间的单向电流MOS晶体管装置,允许电流仅从所述级输入端流向所述级输出端;以及第一电容器,其一板连接到所述级输出端,以及 由相应的第一数字信号驱动的另一个板,周期性地在接地和所述电压源之间切换。 级的单向电流MOS晶体管装置具有独立的体电极,并且提供偏置电压发生器电路,用于以相应的体积电位偏压所述单向电流流量MOS晶体管装置的体电极,其逐渐地从接近于 所述输入端子接近电荷泵的所述输出端子的级。
    • 3. 发明授权
    • Switching circuit having an output voltage varying between a reference
voltage and a negative voltage
    • 开关电路具有在参考电压和负电压之间变化的输出电压
    • US6031761A
    • 2000-02-29
    • US275255
    • 1999-03-24
    • Andrea GhilardelliStefano GhezziStefano CommodaroMarco Maccarrone
    • Andrea GhilardelliStefano GhezziStefano CommodaroMarco Maccarrone
    • G11C16/14G11C16/06
    • G11C16/14
    • Switching circuit that receives a supply voltage, a reference voltage, a line adapted to carry a negative voltage and a control signal, the switching circuit capable of providing at an output a voltage alternatively equal to the reference voltage or to the voltage of the line in response to the control signal. The circuit includes a first MOSFET with a first electrode operationally connected to the line, a second electrode operationally connected to the output, and a control electrode, a second MOSFET with a first electrode operationally connected to the reference voltage, a second electrode operationally connected to the output, and a control electrode, and driving circuitry adapted to bring the control electrodes of the first and second MOSFETs respectively to the supply voltage and to the voltage of the line or, alternatively, to the voltage of the line and to the supply voltage, in response to the control signal.
    • 接收电源电压,参考电压,适于承载负电压的线路和控制信号的开关电路,所述开关电路能够在输出端提供交替地等于所述参考电压或所述线路的电压的电压 响应控制信号。 所述电路包括:第一电极,其具有可操作地连接到所述线路的第一电极,可操作地连接到所述输出端的第二电极;以及控制电极,具有可操作地连接到所述参考电压的第一电极的第二MOSFET, 输出和控制电极以及适于将第一和第二MOSFET的控制电极分别连接到电源电压和线路电压的驱动电路,或者替代地将线路的电压和电源电压 响应于控制信号。
    • 6. 发明授权
    • Memory cell integrated structure with corresponding biasing device
    • 存储单元集成结构与相应的偏置装置
    • US6151251A
    • 2000-11-21
    • US295667
    • 1999-04-21
    • Giovanni CampardoStefano ZanardiMaurizio BranchettiStefano Ghezzi
    • Giovanni CampardoStefano ZanardiMaurizio BranchettiStefano Ghezzi
    • G05F3/20H01L27/115G11C11/34
    • H01L27/115G05F3/205
    • A biasing device for biasing a memory cell having a substrate bias terminal associated therewith. The biasing device includes a first sub-threshold circuitry block adapted to supply an appropriate current during the device standby phase through a restore transistor connected between a supply voltage reference and the substrate bias terminal of the memory cell, and having a control terminal connected to a bias circuit, in turn connected between the supply voltage reference and a ground voltage reference to drive the restore transistor with a current of limited value. The device further includes a second feedback block for fast charging the substrate bias terminal, being connected between the supply voltage reference and the ground voltage reference and comprising a first bias transistor having a control terminal connected to the ground voltage reference via a stabilization transistor, having in turn a control terminal connected to an output node, and to the control terminal of a first regulation transistor connected between the supply voltage reference and the ground voltage reference, the stabilization transistor and first regulation transistor providing feedback for the bias transistor, thereby to restrict the voltage range of the output node.
    • 一种用于偏置具有与其相关联的衬底偏置端子的存储单元的偏置装置。 偏置装置包括第一子阈值电路块,其适于在器件待机阶段期间通过连接在电源电压基准和存储单元的衬底偏置端之间的恢复晶体管提供适当的电流,并且具有连接到存储器单元的控制端 偏置电路又连接在电源参考电压和地电压基准之间,以有限的电流驱动恢复晶体管。 该装置还包括用于对衬底偏置端子进行快速充电的第二反馈块,其连接在电源电压基准和接地电压基准之间,并且包括具有经由稳定晶体管连接到接地电压基准的控制端的第一偏置晶体管, 连接到输出节点的控制终端,以及连接在电源电压基准和接地电压基准之间的第一调节晶体管的控制端,稳压晶体管和第一调节晶体管为偏置晶体管提供反馈,从而限制 输出节点的电压范围。