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    • 1. 发明授权
    • Twisted nematic liquid crystal material with certain values for dielectric constant anisotropy, twisted elasticity modulus and refractive index anisotropy
    • 具有一定值的扭曲向列型液晶材料,介电常数各向异性,扭曲弹性模量和折射率各向异性
    • US07123336B2
    • 2006-10-17
    • US10673271
    • 2003-09-30
    • Akiko ToriyamaMieko Suzuki
    • Akiko ToriyamaMieko Suzuki
    • G02F1/1333
    • C09K19/0208
    • An active matrix drive type liquid crystal display element capable of preventing deterioration of display capability caused by a stripe domain, and a projection type display device using the liquid crystal display element, by which there is provided a projection type display device comprising a light source; a light convergence optical system for guiding a light emitted from said light source to a liquid crystal display element; and a projection optical system for enlarging and projecting a light subjected to light modulation by said liquid crystal display element; wherein the liquid crystal display element is configured by holding a liquid crystal layer between a pair of substrates arranged to face to each other, and a twisted nematic type liquid crystal material used in the liquid crystal layer satisfies dielectric constant anisotropy Δ∈ of 0 6.0 pN when the refractive index anisotropy Δn is 0.16≦Δn≦0.18 and satisfies dielectric constant anisotropy Δ∈ of 0 3.0 pN when the refractive index anisotropy Δn is 0.18≦Δn≦0.20.
    • 一种能够防止由条域导致的显示能力的劣化的有源矩阵驱动型液晶显示元件和使用该液晶显示元件的投影型显示装置,由此提供包括光源的投影型显示装置; 光聚光光学系统,用于将从所述光源发射的光引导到液晶显示元件; 以及投影光学系统,用于放大和投射由所述液晶显示元件进行光调制的光; 其中液晶显示元件通过将液晶层保持在彼此相对布置的一对基板之间而构成,并且在液晶层中使用的扭曲向列型液晶材料满足介电常数各向异性Δε为0 < ∈<8,当折射率各向异性Deltan为0.16 <= Deltan <= 0.18时,K 22> 6.0pN的扭曲弹性模量K 22,并且满足介电常数各向异性Δε为0 <Δε<13,扭曲弹性模量K 22为 当折射率各向异性Deltan为0.18 <= Deltan <= 0.20时,K 22> 3.0 pN。
    • 2. 发明申请
    • Liquid crystal display element and projection type display device
    • 液晶显示元件和投影型显示装置
    • US20050024578A1
    • 2005-02-03
    • US10673271
    • 2003-09-30
    • Akiko ToriyamaMieko Suzuki
    • Akiko ToriyamaMieko Suzuki
    • G02F1/139C09K19/02G02F1/13
    • C09K19/0208
    • An active matrix drive type liquid crystal display element capable of preventing deterioration of display capability caused by a stripe domain, and a projection type display device using the liquid crystal display element, by which there is provided a projection type display device comprising a light source; a light convergence optical system for guiding a light emitted from said light source to a liquid crystal display element; and a projection optical system for enlarging and projecting a light subjected to light modulation by said liquid crystal display element; wherein the liquid crystal display element is configured by holding a liquid crystal layer between a pair of substrates arranged to face to each other, and a twisted nematic type liquid crystal material used in the liquid crystal layer satisfies dielectric constant anisotropy Δε of 0 6.0 pN when the refractive index anisotropy Δn is 0.16≦Δn≦0.18 and satisfies dielectric constant anisotropy Δε of 0 3.0 pN when the refractive index anisotropy Δn is 0.18≦Δn≦0.20.
    • 一种能够防止由条域导致的显示能力的劣化的有源矩阵驱动型液晶显示元件和使用该液晶显示元件的投影型显示装置,由此提供包括光源的投影型显示装置; 光聚光光学系统,用于将从所述光源发射的光引导到液晶显示元件; 以及投影光学系统,用于放大和投射由所述液晶显示元件进行光调制的光; 其中液晶显示元件通过将液晶层保持在彼此相对布置的一对基板之间而构成,并且在液晶层中使用的扭曲向列型液晶材料满足介电常数各向异性Δepsilon0 < 8,当折射率各向异性Deltan为0.16 <= Deltan <= 0.18时,K22> 6.0pN的扭曲弹性模量K22,当折射率各向异性Deltan的折射率各向异性为0.16时,满足介电常数各向异性为0 Kp2> 3.0pN 指数各向异性Deltan是0.18 <= Deltan <= 0.20。
    • 3. 发明授权
    • Liquid crystal display element and projection display device
    • 液晶显示元件和投影显示装置
    • US07167229B2
    • 2007-01-23
    • US11090252
    • 2005-03-28
    • Akiko ToriyamaMieko Suzuki
    • Akiko ToriyamaMieko Suzuki
    • G02F1/1347
    • C09K19/0208
    • An active matrix drive type liquid crystal display element capable of preventing deterioration of display capability caused by a stripe domain, and a projection type display device using the liquid crystal display element, by which there is provided a projection type display device comprising a light source; a light convergence optical system for guiding a light emitted from said light source to a liquid crystal display element; and a projection optical system for enlarging and projecting a light subjected to light modulation by said liquid crystal display element; wherein the liquid crystal display element is configured by holding a liquid crystal layer between a pair of substrates arranged to face to each other, and a twisted nematic type liquid crystal material used in the liquid crystal layer satisfies dielectric constant anisotropy Δε of 0 6.0 pN when the refractive index anisotropy Δn is 0.16≦Δn≦0.18 and satisfies dielectric constant anisotropy Δε of 0 3.0 pN when the refractive index anisotropy Δn is 0.18≦Δn≦0.20.
    • 一种能够防止由条域导致的显示能力的劣化的有源矩阵驱动型液晶显示元件和使用该液晶显示元件的投影型显示装置,由此提供包括光源的投影型显示装置; 光聚光光学系统,用于将从所述光源发射的光引导到液晶显示元件; 以及投影光学系统,用于放大和投射由所述液晶显示元件进行光调制的光; 其中液晶显示元件通过将液晶层保持在彼此相对布置的一对基板之间而构成,并且在液晶层中使用的扭曲向列型液晶材料满足介电常数各向异性Δepsilon0 < 8,当折射率各向异性Deltan为0.16时,K 22> 6.0pN的扭曲弹性模量K 22> = Deltan <= 0.18,并且满足介电常数各向异性的Δepeponon值为0 3.0的扭曲弹性模量K 22 pN当折射率各向异性Deltan为0.18 <= Deltan <= 0.20时。
    • 4. 发明申请
    • Liquid crystal display element and projection display device
    • 液晶显示元件和投影显示装置
    • US20050185132A1
    • 2005-08-25
    • US11090252
    • 2005-03-28
    • Akiko ToriyamaMieko Suzuki
    • Akiko ToriyamaMieko Suzuki
    • G02F1/139C09K19/02G02F1/13G02F1/1347
    • C09K19/0208
    • An active matrix drive type liquid crystal display element capable of preventing deterioration of display capability caused by a stripe domain, and a projection type display device using the liquid crystal display element, by which there is provided a projection type display device comprising a light source; a light convergence optical system for guiding a light emitted from said light source to a liquid crystal display element; and a projection optical system for enlarging and projecting a light subjected to light modulation by said liquid crystal display element; wherein the liquid crystal display element is configured by holding a liquid crystal layer between a pair of substrates arranged to face to each other, and a twisted nematic type liquid crystal material used in the liquid crystal layer satisfies dielectric constant anisotropy Δε of 0 6.0 pN when the refractive index anisotropy Δn is 0.16≦Δn≦0.18 and satisfies dielectric constant anisotropy Δε of 0 3.0 pN when the refractive index anisotropy Δn is 0.18≦Δn≦0.20.
    • 一种能够防止由条域导致的显示能力的劣化的有源矩阵驱动型液晶显示元件和使用该液晶显示元件的投影型显示装置,由此提供包括光源的投影型显示装置; 光聚光光学系统,用于将从所述光源发射的光引导到液晶显示元件; 以及投影光学系统,用于放大和投射由所述液晶显示元件进行光调制的光; 其中液晶显示元件通过将液晶层保持在彼此相对布置的一对基板之间而构成,并且在液晶层中使用的扭曲向列型液晶材料满足介电常数各向异性Δepsilon0 < 8,当折射率各向异性Deltan为0.16时,K 22> 6.0pN的扭曲弹性模量K 22> = Deltan <= 0.18,并且满足介电常数各向异性的Δepeponon值为0 3.0的扭曲弹性模量K 22 pN当折射率各向异性Deltan为0.18 <= Deltan <= 0.20时。
    • 7. 发明授权
    • Process for manufacturing a semiconductor device
    • 半导体器件的制造方法
    • US5332694A
    • 1994-07-26
    • US21076
    • 1993-02-23
    • Mieko Suzuki
    • Mieko Suzuki
    • H01L21/3105H01L21/768H01L21/44
    • H01L21/31055H01L21/76802
    • A process for manufactoring a semiconductor device having a double- or multi-level interconnection structure is disclosed. The process includes steps of: forming a first level metal interconnect; then forming a first silicon oxide layer by PECVD, and forming a second silicon oxide layer by atmospheric CVD using tetraethoxysilane and oxygen containing ozone under a condition of excess ozone in which the ratio of flow-rate of ozone to flow-rate of tetraethoxysilane is about 20:1. An organic compound coating layer is formed by spin-coating accompanied by a thermal treatment. The organic compound coating layer and the second silicon oxide layer are etched-back to remove the compound oxide layer completely. A third silicon oxide layer is formed by PECVD; and forming a second level metal interconnect. A good planarization can be obtained and a failure, such as delamination or blister due to bumping, of the third silicon oxide layer can be avoided. Hence, a high yield and a high reliability of the semiconductor device having a double- or multi-level interconnection structure can be achieved.
    • 公开了一种制造具有双层或多层互连结构的半导体器件的方法。 该方法包括以下步骤:形成第一级金属互连; 然后通过PECVD形成第一氧化硅层,并且在臭氧流量与四乙氧基硅烷流量之比为约的过量臭氧条件下,使用四乙氧基硅烷和含氧臭氧在大气CVD下形成第二氧化硅层 20:1。 通过伴随热处理的旋涂形成有机化合物涂层。 有机化合物涂层和第二氧化硅层被回蚀以完全去除复合氧化物层。 通过PECVD形成第三氧化硅层; 以及形成第二级金属互连。 可以获得良好的平坦化,并且可以避免第三氧化硅层的故障,例如由于凸起引起的分层或起泡。 因此,可以实现具有双层或多层互连结构的半导体器件的高产率和高可靠性。
    • 9. 发明授权
    • Fabrication method of semiconductor device
    • 半导体器件的制造方法
    • US6054383A
    • 2000-04-25
    • US754327
    • 1996-11-21
    • Mieko SuzukiTetsuya Homma
    • Mieko SuzukiTetsuya Homma
    • H01L23/522H01L21/304H01L21/768H01L21/4763
    • H01L21/76834H01L21/7684H01L21/76843H01L21/76847H01L21/76849H01L21/76877
    • A fabrication method of a semiconductor device is provided, which enables the formation of a conductive plug in an opening of an interlevel dielectric layer without arising any void. After a first wiring layer is formed on a first interlevel electric layer, a second interlevel dielectric layer is formed on the first interlevel dielectric layer to cover the first wiring layer. A first opening is formed in the second interlevel dielectric layer. A first conductive layer is formed on or over the second interlevel dielectric layer to cover the first opening. A first protection layer is formed on the first conductive layer to cover a first depressed part of the first conductive layer. The first protection layer having a first buried part on the first depressed part. The first protection layer and the first conductive layer are polished by a CMP process until the second interlevel dielectric layer is exposed, thereby selectively leaving the first depressed part within the first opening. The first depressed part left within the first opening constitutes a first conductor plug for electrically interconnecting the first wiring layer with a second wiring layer formed to be contacted with the fist conductor plug.
    • 提供一种半导体器件的制造方法,其能够在不产生任何空隙的情况下在层间电介质层的开口中形成导电插塞。 在第一层间电层上形成第一布线层之后,在第一层间电介质层上形成第二层间电介质层以覆盖第一布线层。 在第二层间介质层中形成第一开口。 第一导电层形成在第二层间介电层上或上方以覆盖第一开口。 第一保护层形成在第一导电层上以覆盖第一导电层的第一凹陷部分。 第一保护层在第一凹陷部分上具有第一掩埋部分。 通过CMP工艺对第一保护层和第一导电层进行抛光直到第二层间电介质层露出,从而选择性地将第一凹陷部分留在第一开口内。 留在第一开口内的第一凹部构成第一导体插头,用于将第一布线层与形成为与第一导体插塞接触的第二布线层电连接。