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    • 1. 发明授权
    • On chip conductive fluid sensing circuit
    • 片上导电流体检测电路
    • US4853718A
    • 1989-08-01
    • US232409
    • 1988-08-15
    • Abdul M. ElHatemSteven A. Buhler
    • Abdul M. ElHatemSteven A. Buhler
    • B41J2/175G01F23/26
    • B41J2/17566G01F23/265G01F23/266
    • The ink in an ink jet is sensed by a capacitor, one plate of which is coupled to ground through the ink. The absence of ink will appear as a decreased amount of capacitance. In this case the charge of the capacitor will leak off faster, and a sample and hold circuit can sense this to output a signal indicating the absence of ink. The charging signal can either be generated on the chip, which is made from silicon, or can be supplied to the chip. The number of pins on the chip taken for this sensing function can be minimized by multplexing the states of signals supplied to the chip for other purposes to generate the necessary signals to control and operate this sensor.
    • 喷墨中的油墨由电容器感测,其中一个板通过油墨与地面连接。 没有墨水将出现电容量的减少。 在这种情况下,电容器的电荷会更快地泄漏,并且采样和保持电路可以感测到这一点,以输出指示不存在墨水的信号。 充电信号可以在由硅制成的芯片上产生,或者可以提供给芯片。 通过将提供给芯片的信号的状态多路复用以产生用于控制和操作该传感器的必要信号,可以最大限度地减少用于该感测功能的芯片上的引脚数。
    • 5. 发明授权
    • High power mosfet semiconductor device
    • 大功率mosfet半导体器件
    • US06825513B2
    • 2004-11-30
    • US10260611
    • 2002-09-27
    • Abdul M. ElHatem
    • Abdul M. ElHatem
    • H01L2978
    • H01L29/7802H01L29/0634
    • A high power MOSFET semiconductor having a high breakdown voltage. The new power device concept that reaches an area of a lower specific on-resistance, higher breakdown voltage and reduced device silicon area. This device architecture is built on the concepts of charge compensation in the drift region of the device. Where, the doping of the vertical drift region is increased by one order of magnitude. To counterbalance the added charges, fine-structured wells of opposite doping type to the drift region are introduced as part of the device structure. The charge compensation wells do not contribute to the on-state current conduction, therefore, this novel new generation of high voltage device architecture breaks the limit line of silicon. This architecture may extend to higher material resistivity and larger geometry to increase the voltage to 1kv plus.
    • 具有高击穿电压的高功率MOSFET半导体。 新的功率器件概念,达到较低的导通电阻,更高的击穿电压和减少器件硅面积的区域。 该器件架构基于器件漂移区域中的电荷补偿的概念。 其中垂直漂移区域的掺杂增加一个数量级。 为了平衡所添加的电荷,引入了与漂移区相反的掺杂类型的精细结构的阱作为器件结构的一部分。 电荷补偿阱对导通状态电流无贡献,因此,这种新一代高压器件结构破坏了硅的限制线。 这种架构可以延伸到更高的材料电阻率和更大的几何形状,以将电压增加到1kv加。
    • 6. 发明授权
    • Method of packaging high voltage components with low voltage components
in a small space
    • 在小空间内用高压元件封装高压元件的方法
    • US5699231A
    • 1997-12-16
    • US562615
    • 1995-11-24
    • Abdul M. ElHatemMohammad M. Mojarradi
    • Abdul M. ElHatemMohammad M. Mojarradi
    • H05K1/02H05K3/28H05K5/06H05K5/00
    • H05K5/064H05K1/0256H05K1/0262H05K3/284H05K2201/09063H05K2201/09072H05K2201/10689
    • An electronic circuit package in which several high voltage components are packaged along with low voltage components using standard circuit boards and minimizing the space needed for the entire assembly. A miniature circuit board, constructed of standard circuit board material, is used to mount several electronic components, some of which require high voltages. To meet isolation requirements, requiring a dielectric strength more than that provided by the board itself, between the high and low voltage nodes the circuit board incorporates slots or other cut out shapes in the board. The slots or other cut out shapes provide two functions. The first use for the slots or other cut out shapes is to prevent charge migration on the surface of the board between high and low voltage nodes. This is accomplished by placing the slots or other cut out shapes between high and low voltage nodes. The circuit board is then encapsulated within a potting material. The slots or other cut out shapes perform a second function of allowing the potting material to flow around and through the board to facilitate full encapsulation of the board and the electronic devices on the board. Several of the slots or other cut out shapes are placed in the board directly underneath the electronic devices mounted on the board to aid in allowing the potting material to completely surround and encapsulate the electronic devices.
    • 一种电子电路封装,其中使用标准电路板将几个高压部件与低电压部件一起封装,并使整个组件所需的空间最小化。 由标准电路板材料构成的小型电路板用于安装几个电子部件,其中一些需要高电压。 为了满足隔离要求,要求绝缘强度大于电路板本身提供的绝缘强度,在高压节点和低电压节点之间,电路板在板中集成了槽或其他切割形状。 槽或其他切割形状提供两个功能。 插槽或其他切割形状的第一个用途是防止电池在高压节点和低压节点之间的表面上的电荷迁移。 这通过在高电压节点和低电压节点之间放置槽或其他切割形状来实现。 然后将电路板封装在灌封材料内。 槽或其他切割形状执行允许灌封材料绕过板并流过板的第二功能,以便板和板上的电子器件完全封装。 几个槽或其他切割形状被放置在板上直接位于安装在板上的电子装置下面,以帮助灌封材料完全包围和封装电子装置。