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1. 发明授权

US06385073B1 Integrated circuit device with expandable nonvolatile memory 有权
标题翻译：具有可扩展非易失性存储器的集成电路器件
公开(公告)号：US06385073B1
公开(公告)日：2002-05-07
申请号：US09675106
申请日：2000-09-28
申请人： Yueh-O Yu , Chun-An Tang
发明人： Yueh-O Yu , Chun-An Tang
IPC分类号： G11C502
CPC分类号： G11C5/025
摘要： Disclosed is an integrated circuit device with expandable nonvolatile memory characterized in that a control unit and a voltage generator for memory operation are independently integrated into a common circuit instead of included in each single integrated circuit memory device and shared by at least one integrated circuit memory device. Therefore, multiple circuits such as control urn its and voltage generators and the chip area they occupy in each single integrated circuit memory device are reduced, so that not only the chip size and fabrication cost of the integrated circuit memory devices are decreased, but also the memory capacity is more flexible and adaptive for various applications.
摘要翻译：公开了一种具有可扩展非易失性存储器的集成电路器件，其特征在于用于存储器操作的控制单元和电压发生器独立地集成到公共电路中，而不是包含在每个单个集成电路存储器件中，并由至少一个集成电路存储器件。因此，减少了在各单个集成电路存储器件中占用的多个电路，例如控制器和电压发生器及其占用的芯片面积，使得不仅集成电路存储器件的芯片尺寸和制造成本降低，而且内存容量更灵活，适应各种应用。

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