专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060163617A1 Solid-state imaging device and its manufacturing method 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060163617A1
公开(公告)日：2006-07-27
申请号：US10521587
申请日：2003-08-11
申请人： Kazushi Wada , Kouichi Harada , Shuji Otsuza , Mitsuru Sato
发明人： Kazushi Wada , Kouichi Harada , Shuji Otsuza , Mitsuru Sato
IPC分类号： H01L29/768
CPC分类号： H01L27/14806
摘要： Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep potion of a substrate. A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily. Thus, crosstalk between the adjacent pixels can be prevented.
摘要翻译：可以通过在衬底的深部设置溢流屏障的结构来防止相邻像素之间的串扰。部分P型区域150设置在垂直传送寄存器124的下层区域的预定位置和通道停止区域126.该P型区域150用于调整垂直传送寄存器的下层区域中的电位 124和通道停止区域126，使得在从垂直传送寄存器124的最小电位位置到溢流挡板128的范围内，电位可能变得小于光传感器122的下层区域的电位。因此，由于电位在垂直传送寄存器124的下层区域和下层区域两侧的沟道阻挡区域126为低，由传感器区域光电转换的电荷被该势垒阻挡，并且不能容易地扩散。因此，可以防止相邻像素之间的串扰。

IPRDB

热门服务

关于我们

友情链接

联系方式