会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Thin film transistor including titanium oxides as active layer and method of manufacturing the same
    • 包括钛氧化物作为活性层的薄膜晶体管及其制造方法
    • US07768042B2
    • 2010-08-03
    • US12058399
    • 2008-03-28
    • Jae-Woo ParkSeunghyup Yoo
    • Jae-Woo ParkSeunghyup Yoo
    • H01L29/80
    • H01L29/7869
    • Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.
    • 本发明公开了一种制造薄膜晶体管的方法,该薄膜晶体管包括钛氧化物作为有源层,以及使用该方法制造的薄膜晶体管膜的结构。 薄膜晶体管包括:基板; 使用多晶或无定形钛氧化物在所述衬底上形成的有源层; 以及形成在有源层上的绝缘层。 此外,制造薄膜晶体管的方法包括:形成衬底; 使用多晶或无定形钛氧化物在衬底上形成有源层; 以及在所述有源层上形成绝缘层。 本发明的优点在于,可以提高薄膜晶体管的性能,可以以低成本制造薄膜晶体管,可以解决有害的环境问题,并且薄膜晶体管可以广泛地应用于各种电子设备,包括 但不限于有源矩阵显示器和透明电子设备中的集成驱动器。
    • 7. 发明申请
    • THIN FILM TRANSISTOR INCLUDING TITANIUM OXIDES AS ACTIVE LAYER AND METHOD OF MANUFACTURING THE SAME
    • 包括作为主动层的氧化钛的薄膜晶体管及其制造方法
    • US20080237595A1
    • 2008-10-02
    • US12058399
    • 2008-03-28
    • Jae-Woo ParkSeunghyup Yoo
    • Jae-Woo ParkSeunghyup Yoo
    • H01L29/04H01L21/02
    • H01L29/7869
    • Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.
    • 本发明公开了一种制造薄膜晶体管的方法,该薄膜晶体管包括钛氧化物作为有源层,以及使用该方法制造的薄膜晶体管膜的结构。 薄膜晶体管包括:基板; 使用多晶或无定形钛氧化物在所述衬底上形成的有源层; 以及形成在有源层上的绝缘层。 此外,制造薄膜晶体管的方法包括:形成衬底; 使用多晶或无定形钛氧化物在衬底上形成有源层; 以及在所述有源层上形成绝缘层。 本发明的优点在于,可以提高薄膜晶体管的性能,可以以低成本制造薄膜晶体管,可以解决有害的环境问题,并且薄膜晶体管可以广泛地应用于各种电子设备,包括 但不限于有源矩阵显示器和透明电子设备中的集成驱动器。