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1. 发明申请

WO2011119195A3 MODERN HYDRIDE VAPOR-PHASE EPITAXY SYSTEM & METHODS 审中-公开
标题翻译：现代氢气蒸气相外延系统与方法
公开(公告)号：WO2011119195A3
公开(公告)日：2012-01-12
申请号：PCT/US2010062610
申请日：2010-12-30
申请人： CBL TECHNOLOGIES INC , SOLOMON GLENN S , MILLER DAVID J
发明人： SOLOMON GLENN S , MILLER DAVID J
IPC分类号： H01L21/205
CPC分类号： C30B29/406 , C30B25/08 , C30B25/10
摘要： Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).
摘要翻译：公开了氢化物气相沉积（HVPE）系统。 HVPE氢化物气相沉积系统可以包括反应物源室和包含耦合到反应物源室的基座的生长室。反应物源室可经配置以通过固体或液体前体与不同前体气体之间的化学反应产生反应气体。反应物源室可以被配置为在明显高于室温的温度T（M）下操作。反应物气体在室温或室温下可能化学不稳定。基座构造成接收基板并将基板保持在基板温度T（S）。生长室包括壁可被配置成在温度T（℃）下操作使得T（M），T（S）大于T（℃）。

2. 发明申请

WO2011119195A2 MODERN HYDRIDE VAPOR-PHASE EPITAXY SYSTEM & METHODS 审中-公开
标题翻译：现代氢气蒸气相外延系统与方法
公开(公告)号：WO2011119195A2
公开(公告)日：2011-09-29
申请号：PCT/US2010/062610
申请日：2010-12-30
申请人： CBL TECHNOLOGIES, INC. , SOLOMON, Glenn S. , MILLER, David J.
发明人： SOLOMON, Glenn S. , MILLER, David J.
CPC分类号： C30B29/406 , C30B25/08 , C30B25/10
摘要： Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).
摘要翻译：公开了氢化物气相沉积（HVPE）系统。 HVPE氢化物气相沉积系统可以包括反应物源室和包含耦合到反应物源室的基座的生长室。反应物源室可经配置以通过固体或液体前体与不同前体气体之间的化学反应产生反应气体。反应物源室可以被配置为在明显高于室温的温度T（M）下操作。反应物气体在室温或室温下可能化学不稳定。基座构造成接收基板并将基板保持在基板温度T（S）。生长室包括壁可被配置成在温度T（℃）下操作使得T（M），T（S）大于T（℃）。

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